摘要
研究用卢瑟福背散射 /沟道技术测量分析GaN的结构及结晶品质 ,给出了注入H+离子束改变GaN的电学特性的实验结果。
Study the new photoelectricity material GaN-based by ion beam is very important and necessary.The structure and crystal quality of GaN are measured and analyzed using Rutherford backscattering spectrometry and channeling.The resistivity of GaN has been changed to very higher by implantation H＋ ion.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2000年第z1期41-44,共4页
Atomic Energy Science and Technology
基金
中国与比利时科技合作项目! (1999A1)
关键词
电阻率
载流子浓度
霍尔效应
resistivity
current carrier concentration
Hall effect
