摘要
采用离子注入技术将大量的质子引入到单晶硅中,通过透射电子显微镜和光学显微镜的观察,在注入质子的硅片中,片状缺陷导致晶格的损伤,退火过程中,质子复合成氢分子并聚集,产生巨大的内压力,在表面产生气泡和裂坑;高温退火容易使氢逸出,导致内部压力的降低,气泡突起变小;质子注入硅片在低温退火后内部形成裂纹,而高温退火内部还形成带有非晶化内壁的空腔结构。
Using the ion impregnation technique, a large quantity of protons were impregnated into the monocrystal silicon chip. Observations made with a transmitting electronic microscope(TEM) and an optical microscope indicate that, when impregnating the protons into the chip, laminated defects have caused damages to the crystal lattices, and that, during the annealing process, protons have compounded into hydrogen molecules which are clustered together and cause huge inner pressure, giving rise to bubbles and pit a...
出处
《矿业研究与开发》
CAS
2003年第S1期196-198,共3页
Mining Research and Development
关键词
离子注入
单晶硅
低温退火
高温退火
Ion impregnation
Monocrystal silicon
Annealing under a low temperature
Annealing under a high temperature
