摘要
采用反相方法测试台架在实际工作条件下,对ABB公司提供的实验性3.3kV IGCT进行了特性测定。这种器件在硬开关运行下的导通损耗非常小,开关损耗也降低了。这就表明一种新型大功率/中电压半导体器件已经问世,它们可以用于较高开关频率(超过1kHz)和大电流工况,以改善大功率变换器的性能。
An opposition method test bench has been built to characterise, under real working conditions, the experimental Low Voltage IGCTs(3. 3kV) from ABB. The very low conduction losses and reduced switching losses of this component in hard-switching operation could constitute a new High Power / Medium Voltage Semiconductor for use at high switching frequency (more than 1kHz) and / or at high currents to improve High Power Converter performance.
出处
《电力电子》
2004年第6期37-43,共7页
Power Electronics
