Effects of bias on spin-polarized transport properties in double magnetic tunnel junctions

Effects of bias on spin-polarized transport properties in double magnetic tunnel junctions

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摘要 Spin-polarized transport properties in Fe /insulator (Ⅰ) (semiconductor (S)) / Co / I (S) / Fe double junction systems are investigated theoretically, current density is asymmetry as function of the direction of applied bias, and evaluated using generalized formalism base on the non-equilibrium Green's function, which is implemented with calculation of real space Green's function in tight-binding model in linear response region.

作者 LI Yun

机构地区 Department of Materials Science and Engineering

出处《功能材料》 EI CAS CSCD 北大核心 2004年第z1期519-521,共3页 Journal of Functional Materials

关键词 SPIN-POLARIZED TRANSPORT magnetic tunneljunction SPIN ACCUMULATION TUNNELING

分类号 TN301.1 [电子电信—物理电子学]

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Effects of bias on spin-polarized transport properties in double magnetic tunnel junctions

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