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Surface morphology and impurity distribution of electron beam recrystallized silicon films on low cost substrates for solar cell absorber

Surface morphology and impurity distribution of electron beam recrystallized silicon films on low cost substrates for solar cell absorber
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摘要 A line shaped electron beam recrystallised polycrystalline silicon film on the low cost substrate was investigated for the use of the solar cell absorber. The applied EB energy density strongly influences the surface morphology of the film system. Lower EB energy density results in droplet morphology and the rougher SiO2 capping layer due to the low fluidity. With the energy increasing, the capping layer becomes smooth and continuous and less and small pinholes form in the silicon film. Tungstendisilicide (WSi2) is formed at the interface tungsten/silicon but also at the grain boundaries of the silicon. Because of the fast melting and cooling of the silicon film, the eutectic of silicon and tungstendisilicide mainly forms at the grain boundary of the primary silicon dendrites. The SEM-EDX analysis shows that there are no chlorine and hydrogen in the area surrounding a pinhole after recrystallization because of outgassing during the solidification. A line shaped electron beam recrystallised polycrystalline silicon film on the low cost substrate was investigated for the use of the solar cell absorber. The applied EB energy density strongly influences the surface morphology of the film system. Lower EB energy density results in droplet morphology and the rougher SiO2 capping layer due to the low fluidity. With the energy increasing, the capping layer becomes smooth and continuous and less and small pinholes form in the silicon film. Tungstendisilicide (WSi2) is formed at the interface tungsten/silicon but also at the grain boundaries of the silicon. Because of the fast melting and cooling of the silicon film, the eutectic of silicon and tungstendisilicide mainly forms at the grain boundary of the primary silicon dendrites. The SEM-EDX analysis shows that there are no chlorine and hydrogen in the area surrounding a pinhole after recrystallization because of outgassing during the solidification.
出处 《Rare Metals》 SCIE EI CAS CSCD 2006年第z1期195-200,共6页 稀有金属(英文版)
基金 This project was financially supported by the German Federal Ministry for the Environment, Nature Conservation and Nuclear Safety (No.0329571B).
关键词 polycrystalline silicon film solar cell recrystallization energy surface morphology OUTGASSING polycrystalline silicon film solar cell recrystallization energy surface morphology outgassing
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参考文献11

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