摘要
利用MOCVD生长了InGaN:Mg薄膜,研究了生长温度、掺Mg量对InGaN:Mg薄膜电学特性的影响。结果表明,空穴浓度随着生长温度的降低而升高。在相同的生长温度下,空穴浓度随掺Mg量的增加,先升高后降低。通过对这两个生长条件的优化,在760°C、CP2Mg与TMGa摩尔流量之比为2.2‰时制备出了空穴浓度高达2.4×1019cm-3的p-InGaN∶Mg薄膜。这对进一步提高GaN基电子器件与光电子器件的性能有重要意义。
The electrical properties of InGaN:Mg films grown by MOCVD with various growth temperature and Mg-doping concentration were investigated.The hole concentration increases with the In mole fraction.In spite of the continuous increase of Mg incorporation,the hole concentration of the film increases at first and then decreases from a certain amount of Mg incorporation.The high quality InGaN:Mg film with maximum hole concentration value of 2.4×1019cm-3was obtained by optimizing these two growth conditions.The hi...
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2008年第1期4-7,共4页
Research & Progress of SSE
基金
国家自然科学基金(批准号:60506012)
北京市教委重点项目(批准号:KZ200510005003)
北京工业大学科技基金项目(批准号:52002014200403)
