摘要
针对浮栅晶体管在不同射线下的响应差异问题,进行了^(60)Co-γ射线、25 MeV质子和1 MeV电子的辐照试验,研究了不同射线下浮栅晶体管的剂量响应差异。采用蒙特卡罗方法对器件灵敏区的吸收剂量进行了修正。通过中带电压分离出界面陷阱电荷,分析了不同射线下电离辐射响应差异的微观机理。研究结果表明,在等效剂量下,质子辐照后电离响应特性与^(60)Co-γ射线较为接近,电子辐照后响应程度略低于质子和^(60)Co-γ射线。对器件灵敏区的吸收剂量进行修正后,三种射线下的剂量响应特性差异降低。质子辐照后界面陷阱电荷数量多于^(60)Co-γ射线和电子射线。试验研究为浮栅晶体管辐照传感器的研制提供参考。
Aiming at the response difference of floating gate transistors under different rays,comparative irradiation experiments of^(60)Co-γrays,25 MeV protons and 1 MeV electrons were carried out.The dose response difference of floating gate transistors under different rays was studied,and the absorbed dose in the sensitive region of the device was corrected by Monte Carlo method.The microscopic mechanism of the difference in ionizing radiation response under different rays was analyzed by separating the interface trap charge from the mid-band voltage.The results show that under the equivalent dose,the ionization response characteristics after proton irradiation are close to that of^(60)Co-γray,and the response degree after electron irradiation is slightly lower than that of proton and^(60)Co-γray.After correcting the absorbed dose in the sensitive region of the device,the difference of dose response characteristics under three rays is reduced.The number of interface trap charges after proton irradiation is more than that of^(60)Co-γray and electron ray.The experimental study provides a reference for the development of radiation sensor of floating gate transistor.
作者
任李贤
孙静
何承发
荀明珠
郭旗
REN Lixian;SUN Jing;HE Chengfa;XUN Mingzhu;GUO Qi(The Xinjiang Technical Institute of Physics&Chemistry,Chinese Academy of Sciences,Urumqi 830011,P.R.China;University of Chinese Academy of Sciences,Beijing 100190,P.R.China)
出处
《微电子学》
CAS
北大核心
2023年第6期981-987,共7页
Microelectronics
基金
特殊环境机器人技术四川省重点实验室开放基金资助项目(21kftk03)
中科院西部之光资助项目(2021-XBQNXZ-020)
国家自然科学基金资助项目(11975305)
关键词
浮栅晶体管
总剂量效应
陷阱电荷分离
剂量响应差异
floating gate transistor
total ionizing radiation
separation of trap charge
dose response variance
