摘要
介绍了一种回字形抗辐射环栅LDMOS器件。分析了该器件在版图绘制中的结构优势,并结合Sentaurus仿真结果,通过区域划分和类MOS结构拟合阈值电压,给出了该器件的等效宽长比模型和饱和电流模型。在标准商用0.18μm BCD工艺下流片,测试结果表明,理论模型在一定栅压范围内误差可低于10%。在总剂量测试中,关态泄漏电流随剂量增加变化较小,有一定的抗辐射加固能力。
A rectangular enclosed layout LDMOS device has been introduced,highlighting the advantages of its structural design on the chip.The equivalent aspect ratio W/L model was calculated using regional decomposition based on simulation results from Sentaurus.Additionally,the model for saturation current was derived by fitting the threshold voltage of a like-MOS structure.The chips were manufactured using a 0.18μm BCD process.Test results demonstrated that the model accuracy remained under 10%within a gate voltage range.Notably,the leakage current exhibited minimal changes as the TID radiation increased in the ON status device,confirming its TID radiation hardening capability.
作者
肖洋
XIAO Yang(University of Electronic Science and Technology of China,Chengdu 611731,P.R.China;Chongqing Institute Microelectronics Industry Technology,University of Electronic Science and Technology of China,Chongqing 400060,P.R.China)
出处
《微电子学》
CAS
北大核心
2023年第6期1011-1016,共6页
Microelectronics
基金
重庆市自然基金项目(CSTB2023NSCQMSX0153)
