摘要
针对宽带功率放大器设计中晶体管增益滚降特性带来平坦度较差的问题,本文通过在级间匹配网络中采用正斜率设计以抵消晶体管增益滚降影响的方法,设计了一款2-6GHz超宽带高功率氮化镓放大器芯片,实测结果表明该功率放大器在2.3-6.4GHz频带范围内,输出功率>43dBm,功率附加效率>29.3%,带内增益平坦度小于±1.5dB。针对该芯片面积较大、输入回波损耗差的缺点,通过在输入级与第一级级间匹配网络中使用电容电感等集总元件,使芯片面积缩小~9%,并通过在输入级采用有耗元件,将输入回波损耗改善了5dB以上。
Aiming at the problem of poor flatness caused by transistor gain roll-off characteristics in the design of broadband power amplifiers,this paper designed and processed a 2-6 GHz by using a positive slope design in the inter-stage matching network to offset the effect of transistor gain roll-off Ultra-wideband high power gallium nitride amplifier chip,the actual measurement results show that the power amplifier is in the 2.3-6.4 GHz band,the output power is>43 dBm,the power added efficiency is>29.3%,the in-band gain Flatness is less than 3 dB.Aiming at the shortcomings of the large chip area and poor input return loss,the chip area is reduced by^9%by using lumped components such as capacitors and inductors in the matching network between the input stage and the first stage,and by adopting the input stage Lossy components improve input return loss by more than 5 dB.
作者
唐博文
余刚
林支慷
徐跃杭
TANG Bo-wen;YU Gang;LIN Zhi-kang;XU Yue-hang(College of Electronics Science and Engineering,University of Electronic Science and Technology of China,Chengdu 611731,China)
出处
《微波学报》
CSCD
北大核心
2020年第S01期172-174,共3页
Journal of Microwaves
