摘要
随着芯片工艺尺寸的缩小和集成度的提高,在移动设备、数据中心和物联网等领域,功耗成为设计的重点。面向低功耗的宽电压近阈值设计方法学被提出,同时宽电压技术在近阈值区域也遇到了性能损失、功耗泄露、工艺波动等问题。本文综述了近阈值宽电压技术发展中的概况和挑战以及未来发展的一些思考。
With the scale-down of semiconductor’s feature size and the improvement of integration,power consumption has become the focus of design in fields such as mobile devices,data centers,and the internet of things.Wide-voltage design methodology for low power consumption is proposed.At the same time,wide-voltage technology also encounters performance loss,power leakage,and process fluctuations in the near-threshold region.This article reviews the general situation and challenges in the development of near-threshold wide-voltage technology and some thoughts on future development.
作者
张舜
张科龙
王泽蓥
闫浩
ZHANG Shun;ZHANG Kelong;WANG Zeying;YAN Hao(National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China)
出处
《微纳电子与智能制造》
2021年第2期106-110,共5页
Micro/nano Electronics and Intelligent Manufacturing
基金
国家重点研发计划(2018YFB2202702)项目资助
关键词
集成电路
宽电压
近阈值
设计方法学
integrated circuit
wide voltage
near-threshold
design methodology
