摘要
采用800 nm,100 fs的超短脉冲激光器对硅面阵CCD进行辐照实验,观测到饱和、串扰以及永久性损伤等多种可能造成成像器件失效的现象,特别是在激光能量较高时,发现CCD在成像时出现了黑白屏的现象。在飞秒激光器以1,10和1000 Hz工作的条件下,分别测量了硅面阵CCD的饱和阈值、串扰阈值和破坏阈值。对破坏后的CCD器件进行了显微分析。在1 kHz工作的条件下进行了视场外干扰实验,观察到串扰和全屏饱和的现象。
Silicon-CCD is irradiated by 800 nm 100 fs pulsed laser, and the phenomena of saturation, cross-talk and totally damage are observed and corresponding thresholds versus repetitive frequency are measured. Particularly, a new damage phenomenon characterized by a degraded image divided into a bright part and a dark part is observed. Microscope is used to analyze the damage mechanism and it is inferred that the most severe failure could result from the malfunction of CCD circuits because of laser irradiation. Typical results of CCD irradiated by laser out of field of view is also presented.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2007年第11期1783-1786,共4页
High Power Laser and Particle Beams
基金
国家863计划项目资助课题
关键词
飞秒激光
面阵CCD
破坏机理
串扰
饱和
Femto-second laser
Array CCD
Damage mechanism
Cross-talk
Saturation
