摘要
文章介绍了迁移效应和自旋忆阻器原理,针对HP忆阻器,提出一种基于N迁移效应的自旋忆阻器的构想,从模型制备、可行性探究方面论证了理论可行性,并对下一步研究方向给出了思路。
In this passage, the migration effect and the principle of the spin memrisor were introduced and a concept of spin memristor based on N migration effect was proposed for HP memristor. The feasibility of model preparation was theoretically proved from the aspect of feasibility study, and the next research direction was given.
作者
曾进
刘磊
陆叶
Zeng Jin;Liu Lei;Lu Ye(The 28th Research Institute of China Electronics Technology Group Corporation,Nanjing 210007,China)
出处
《信息化研究》
2019年第5期41-45,共5页
INFORMATIZATION RESEARCH
