摘要
采用水热腐蚀法制备了铁钝化多孔硅样品,样品光致发光谱的荧光峰位于2.0eV附近,半峰宽约为0.40eV。激发波长从240nm增大到440nm的过程中,荧光峰先红移再蓝移,最后基本稳定,变化曲线呈勺型。通过分析15片发光多孔硅样品的统计结果,发现荧光峰逆转所对应的激发波长位于330nm附近,相应的激发光子能量约为3.8eV。样品光致发光谱随激发波长的勺型变化过程与≡Si—O↑和≡Si—O↑…H—O—Si≡两类非桥氧空穴发光中心共同作用时的发光行为一致。
Hydrothermal etching method was employed to prepare iron-passivated porous silicon( IPSi) samples with peak energy around 2.0 eV and FWHM of 0.40 eV. As the excitation wavelength increases from 240 to 440 nm,the peak energy of photoluminescence red-shifts first,and then blueshifts before it reaches a constant energy. The changing curve demonstrates a spoon-like pattern. By analyzing the statistics results from 15 IP-Si samples,it is found that the turnover excitation wavelength corresponding to the peak energy is about 330 nm and the related photon energy is 3. 8 eV.The spoon-like relationship found between the peak energy and excitation wavelength is in good agreement with the photoluminescence behavior under the combined action of two types of non-bridging oxygen hole center of ≡Si—O↑and ≡Si—O↑…H—O—Si≡.
出处
《发光学报》
EI
CAS
CSCD
北大核心
2014年第12期1427-1431,共5页
Chinese Journal of Luminescence
基金
福建省教育厅A类项目(JA14196)
闽南师范大学科研基金(SK08013)资助项目
关键词
多孔硅
铁钝化
光致发光
非桥氧空穴
水热腐蚀
porous silicon
iron passivated
photoluminescence
non-bridging oxygen hole
hydrothermal etching
