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钝化多孔硅光致发光谱的时间演化特性 被引量:1

Time Evolution of Photoluminescence of Different Passivated Porous Silicon
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摘要 通过改变溶液的组成成份 ,用水热腐蚀技术原位制备出具有不同表面钝化状况的四类多孔硅样品 .将上述样品室温下存放于空气中 ,其光致发光谱的时间演化特性差异很大 .其中 ,氢钝化多孔硅的发光强度衰减最快 ,峰位蓝移量也最大 ,而铁钝化多孔硅的发光强度和峰位则几乎不发生变化 .红外吸收谱实验揭示出这种差异可能来源于样品表面钝化成份的不同 . Through varying the components of the hydrothermal solution,four kinds of PS ( porous silicon ) are prepared by the hydrothermal method. The evolution of their PL ( photoluminescence) spectra with the storing time exhibits different properties:the hydrogen- passivated PSperforms fast PL degradation and big blue shift of PL peak wavelength while the iron- passivated PS keeps almost unchanged.The infrared absorption measurements indicates that the spectroscopic difference might originate from the difference of the surface-passivation.This result provides a new approach for obtaining porous silicon with stable photoluminescence.
出处 《郑州大学学报(自然科学版)》 CAS 2001年第1期36-40,共5页 Journal of Zhengzhou University (Natural Science)
基金 国家自然科学基金资助项目 !(批准号 :1990 40 11) 河南省杰出青年科学基金资助项目
关键词 多孔硅 光致发光谱 表面钝化 时间演化特性 发光强度 峰位 半导体发光材料 porous silicon photoluminescence surface-passivation
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参考文献9

  • 1[1] Miller A B David. Silicon integrated circuits shine. Nature(London), 1996, 384: 307. 被引量:1
  • 2[2] Cullis A G, Canham L T, Calcott P D J. The structural and luminescence properties of porous silicon. J Appl Phys, 1997, 82: 909. 被引量:1
  • 3[3] Hirschman K D, Tysbeskov L, Duttagupta S P, et al. Silicon-based visible light-emitting devices integrated into microelectronic circuits. Nature (London), 1996,384: 338. 被引量:1
  • 4[4] Canham L T. Luminescence bands and their proposed origins in highly porous silicon. Phys Status Solidi, 1995,B 190: 9. 被引量:1
  • 5[5] Cooke D W, Bennett B L, Farnum E H, et al. SiOx luminescence from light-emitting porous silicon: support for the quantum confinement/luminescence center model. Appl Phys Lett, 1996,68: 1663. 被引量:1
  • 6[6] Chen Qianwang, Li Xinjian, Zhu Jingsheng, et al. Novel technique for preparation of porous silicon. Progress in Natural Science, 1998,8: 87. 被引量:1
  • 7[7] Li Xinjian, Zhu Deliang, Chen Qianwang, et al. Strong and nondegrading-luminescent porous silicon prepared by hydrothermal etching. Appl Phys Lett, 1999,74: 389. 被引量:1
  • 8[8] Lin Chihui, Lee Sichen, Chen Yangfang. Morphologies and photoluminescence of porous silicon under different etching and oxidations. J Appl Phys, 1994, 75: 7728. 被引量:1
  • 9[9] Li Xinjian, Hu Xing, Jia Yu, et al. Tunable superstructures in hydroth ermally etched iron-passivated porous silicon. Appl Phys Lett,1999,75:2906. 被引量:1

同被引文献13

  • 1许海军,富笑男,孙新瑞,李新建.硅纳米孔柱阵列的结构和光学特性研究[J].物理学报,2005,54(5):2352-2357. 被引量:24
  • 2Canham L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers [ J]. Applied Physics Letters, 1990,57 (10) : 1046 - 1068. 被引量:1
  • 3Wolkin M V,Jorne J,Fauchet P M,et al. Electronic states and 1 [ J ]. Physical Review Letters, 1999,82 (1 ) : 197 - 200. 被引量:1
  • 4Prokes S M. Light emission in thermally oxidized porous silicon : Evidence for oxide-related luminescence [ J ]. Applied Physics Letters, 1993,62 (25) : 3244 - 3246. 被引量:1
  • 5de la Mora M B, Bornacelli J, Nava R, et al. Porous silicon photoluminescence modification by colloidal gold nanoparticles: Plas- monic, surface and porosity roles [J]. Journal of Luminescence,2014,146:247 -255. 被引量:1
  • 6Lorrette C, Reau A, Briottet L. Mechanical properties of nanostructured silicon carbide consolidated by spark plasma sintering [ J]. Journal of the European Ceramic Society ,2013,33 (1):147 -156. 被引量:1
  • 7Brassard D, E1 Khakani M A. Dielectric properties of amorphous hydrogenated silicon carbide thin films grown by plasma-en- hanced chemical vapor deposition [ J]. Journal of Applied Physics ,2003,93 (7) :4066 -4071. 被引量:1
  • 8Kim S, Choi J, Jung M, et al. Silicon carbide-based hydrogen gas sensors for high-temperature applications [ J]. Sensors (Basel), 2013,13(10) :13575 - 13583. 被引量:1
  • 9Bjorkqvist M, Paski J, Salonen J, et al. Temperature dependence of thermally-carbonized porous silicon humidity sensor [ J ]. Physica Status Solidi A-Applications and Materials Science ,2005,202 ( 8 ) : 1653 - 1657. 被引量:1
  • 10Mercaldo L V, Esposito E M, Veneri P D, et al. First and second-order raman scattering in Si nanostructures within silicon ni- tride[J]. Applied Physics Letters ,2010,97 ( 15 ) : 153112. 被引量:1

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