摘要
用水热腐蚀法制备出了红光发射（～2．0eV）的铁钝化多孔硅。在240nm紫外光持续辐照下，样品的红光强度迅速增强～10％后趋于稳定。傅立叶红外变换光谱分析结果显示样品中有强的Si-O-Si和Si-O-H吸收，同时存在氧化的硅烷基团（O3-xSix）Si-H（x=1，2，3）。量子限制-发光中心模型（QCLC）以及非桥氧空穴缺陷（NBOHC）被用于解释强的稳定的红光辐射。
Iron - passivated porous silicon （IPS） with red light photoluminescence （ - 2.0 eV） was prepared by hydrothermal etching. Under the exposure of 240 nm ultraviolet light irradiation, the photoluminescence intensity of the IPS enhanced 10% immediately, and then turned to be stable. Fourier transform infra- red spectra showed that strong absorptions of Si-O-Si and Si-O-H were established in the IPS, and indicated the existence of oxidized silane groups. Both quantum confinement/luminescence center model and nonbridging oxygen hole center defect were employed to interpret the strong and stable luminescence of IPS.
出处
《热处理技术与装备》
2008年第5期33-36,共4页
Heat Treatment Technology and Equipment
基金
漳州师范学院科研启动基金(项目编号:L206H6)
关键词
多孔硅
铁钝化
光致发光
非桥氧空穴
水热腐蚀
porous silicon
photoluminescence
nonbridging oxygen hole center
hydrothermal etching
