Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia...Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation. The crystalline quality of GaN films revealed by high resolution X-ray diffraction were strongly dependent on the nitridation time, which determined substrate surface topography. The different nitridation schemes strongly affected the morphology of GaN overlayers resulting in the blue shift of the main excitonic peak in photoluminescence spectra at room temperature.展开更多
Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rat...Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates （<40 nm/min） were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.展开更多
Thermal parameters of various III-V antimonides,especially the quaternary lattice matched to GaSb or InAs substrates as well as some strained ternaries,have been investigated theoretically.Results show that at most co...Thermal parameters of various III-V antimonides,especially the quaternary lattice matched to GaSb or InAs substrates as well as some strained ternaries,have been investigated theoretically.Results show that at most composition region many ternary and quaternary antimonides exhibit rather lower thermal conductivity compared to related binaries,and the reason has been discussed.The thermal designing rule of the lasers and other power devices using those antimonides also has been discussed.展开更多
基金National"863"Project of China (2001AA311100 and 2002AA305304) Sino French Cooperation Project:CNRS/ASC Chine 2003 Project(14915)
文摘Thick GaN films were grown on the sapphire substrate by hydride vapour phase epitaxy. The properties of GaN films were found to be significantly influenced by the duration of exposing the sapphire substrate to ammonia prior to the GaN growth initiation. The crystalline quality of GaN films revealed by high resolution X-ray diffraction were strongly dependent on the nitridation time, which determined substrate surface topography. The different nitridation schemes strongly affected the morphology of GaN overlayers resulting in the blue shift of the main excitonic peak in photoluminescence spectra at room temperature.
文摘Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates （<40 nm/min） were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.
文摘Thermal parameters of various III-V antimonides,especially the quaternary lattice matched to GaSb or InAs substrates as well as some strained ternaries,have been investigated theoretically.Results show that at most composition region many ternary and quaternary antimonides exhibit rather lower thermal conductivity compared to related binaries,and the reason has been discussed.The thermal designing rule of the lasers and other power devices using those antimonides also has been discussed.
