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A TEM Study of Microstructures in Chlorine-implanted Silicon
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作者 J.H.Evans ZhangChonghong +5 位作者 WangZhiguang T.Shibayama K.Sakaguchi H.Takahashi V.M.Vishnyakov S.E.Donnelly 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2002年第1期59-60,共2页
The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specim... The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specimens of silicon (p-type) were implanted at room temperature with chlorine ions to four successfully increasing doses of 1×1015(40 keV and 80 keV), 5×1015(100 keV), 1×l016(100 keV), and 5×l016(100 keV) Cl+ ions/cm2. 展开更多
关键词 透射电镜研究 氯离子注入 显微结构 TEM EDS光谱 核物理实验
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