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Comprehensive,Continuous,and Vertical Measurements of Seawater Constituents with Triple-Field-of-View High-Spectral-Resolution Lidar
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作者 Kai Zhang Yatong Chen +19 位作者 Hongkai Zhao Zhongping Lee Emmanuel Boss Iwona Stachlewska Davide Dionisi Cedric Jamet Paolo D.Girolamo Aleksey Malinka Chengchong Jiang Hongda Wu Lingyun Wu Feitong Chen Xiaolei Zhu Nanchao Wang Chuxiao Chen Qun Liu Lan Wu Yudi Zhou Weibiao Chen Dong Liu 《Research》 SCIE EI CSCD 2024年第2期191-201,共11页
Measuring the characteristics of seawater constituent is in great demand for studies of marine ecosystems and biogeochemistry.However,existing techniques based on remote sensing or in situ samplings present various tr... Measuring the characteristics of seawater constituent is in great demand for studies of marine ecosystems and biogeochemistry.However,existing techniques based on remote sensing or in situ samplings present various tradeoffs with regard to the diversity,synchronism,temporal-spatial resolution,and depth-resolved capacity of their data products.Here,we demonstrate a novel oceanic triple-field-of-view(FOV)high-spectral-resolution lidar(HSRL)with an iterative retrieval approach.This technique provides,for the first time,comprehensive,continuous,and vertical measurements of seawater absorption coefficient,scattering coefficient,and slope of particle size distribution,which are validated by simulations and field experiments.Furthermore,it depicts valuable application potentials in the accuracy improvement of seawater classification and the continuous estimation of depth-resolved particulate organic carbon export.The triple-FOV HSRL with high performance could greatly increase the knowledge of seawater constituents and promote the understanding of marine ecosystems and biogeochemistry. 展开更多
关键词 LIDAR VERTICAL seawater
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Optimization of the pulse width and injection time in a double-pass laser amplifier 被引量:1
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作者 Daewoong Park Jihoon Jeong Tae Jun Yu 《High Power Laser Science and Engineering》 SCIE CAS CSCD 2018年第4期91-97,共7页
We have optimized the input pulse width and injection time to achieve the highest possible output pulse energy in a double-pass laser amplifier using two Nd:YAG rods. For this purpose, we have extended the Frantz–Nod... We have optimized the input pulse width and injection time to achieve the highest possible output pulse energy in a double-pass laser amplifier using two Nd:YAG rods. For this purpose, we have extended the Frantz–Nodvik equation by simultaneously including both spontaneous emission and pump energy variation. The effective pump energy of the flash lamp was 8.84 J for each gain medium. The energy of 1 J could be amplified to an output energy of 12.17 J with the maximum achieved extraction efficiency of 63.18% when an input pulse having a pulse width of 168 μs is sent 10 μs after the absorbed pump energy becomes the maximum value. 展开更多
关键词 Frantz–Nodvik equation input PULSE OPTIMIZATION PULSE OVERLAP PUMP energy variation SPONTANEOUS emission
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Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study 被引量:1
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作者 李文波 李玲 +9 位作者 王方方 郑柳 夏经华 秦福文 王晓琳 李永平 刘瑞 王德君 潘艳 杨霏 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第3期461-464,共4页
The effect of phosphorus passivation on 4H-SiC(0001) silicon (Si) dangling bonds is investigated using ab initio atomistic thermodynamic calculations. Phosphorus passivation commences with chemisorption of phospho... The effect of phosphorus passivation on 4H-SiC(0001) silicon (Si) dangling bonds is investigated using ab initio atomistic thermodynamic calculations. Phosphorus passivation commences with chemisorption of phosphorus atoms at high-symmetry coordinated sites. To determine the most stable structure during the passivation process of phosphorus, a surface phase diagram of phosphorus adsorption on SiC (0001) surface is constructed over a coverage range of 1/9-1 monolayer (ML). The calculated results indicate that the 1/3 ML configuration is most energetically favorable in a reasonable environment. At this coverage, the total electron density of states demonstrates that phosphorus may effectively reduce the interface state density near the conduction band by removing 4H-SiC (0001) Si dangling bonds. It provides an atomic level insight into how phosphorus is able to reduce the near interface traps. 展开更多
关键词 phosphorus passivation silicon carbide near interface traps surface phase diagram
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