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Influence of strain on hydrogenic impurity states in a GaN/ Al_xGa_(1-x)N quantum dot 被引量:3
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作者 张彬 闫祖威 《Optoelectronics Letters》 EI 2009年第2期85-88,共4页
Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum do... Within the effective-mass approximation, we calculated the influence of strain on the binding energy of a hydrogenic donor impurity by a variational approach in a cylindrical wurtzite GaN/AlxGa1-xN strained quantum dot, including the strong built- in electric field effect due to the spontaneous and piezoelectric polarization. The results show that the binding energy of impurity decreases when the strain is considered. Then the built-in electric field becomes bigger with the Al content increasing and the bin... 展开更多
关键词 ALUMInUM Binding sites Electric field effects GALLIUM nuclear energy Potential energy Semiconductor quantum dots Semiconductor quantum wells Zinc sulfide
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