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Chaotic dynamics dependence on doping density in weakly coupled GaAs/AlAs superlattices
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作者 杨癸 李远红 +1 位作者 张凤英 李玉琦 《Journal of Semiconductors》 EI CAS CSCD 2012年第9期8-12,共5页
A discrete sequential tunneling model is used for studying the influence of the doping density on the dynamical behaviors in weakly coupled GaAs/AlAs superlattices. Driven by the DC bias, the system exhibits self- sus... A discrete sequential tunneling model is used for studying the influence of the doping density on the dynamical behaviors in weakly coupled GaAs/AlAs superlattices. Driven by the DC bias, the system exhibits self- sustained current oscillations induced by the period motion of the unstable electric field domain, and an electrical hysteresis in the loop of current density voltage curve is deduced. It is found that the hysteresis range strongly depends on the doping density, and the width of the hysteresis loop increases with increasing the doping density. By adding an external driving ac voltage, more complicated nonlinear behaviors are observed including quasi- periodicity, period-3, and the route of an inverse period-doubling to chaos when the driving frequency changes. 展开更多
关键词 weakly-coupled superlattice current oscillation the hysteresis loop
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低温和高压条件对GaAs/AlAs弱耦合超晶格电场畴形成的影响 被引量:1
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作者 刘振兴 孙宝权 江德生 《低温与超导》 CAS CSCD 北大核心 1998年第3期23-27,共5页
在低温条件下用静水压法研究了掺杂弱耦合GaAs/AlAs超晶格材料的电场畴形成及级联共振隧穿过程。对于第一电流类平台区域,我们观察到了两种级联共振隧穿过程。当P<0.16GPa时,高场畴为Γ-Γ级联共振隧穿过程;而当... 在低温条件下用静水压法研究了掺杂弱耦合GaAs/AlAs超晶格材料的电场畴形成及级联共振隧穿过程。对于第一电流类平台区域,我们观察到了两种级联共振隧穿过程。当P<0.16GPa时,高场畴为Γ-Γ级联共振隧穿过程;而当P>0.16GPa时,高场畴则为Γ-X级联共振隧穿过程。对温度-电阻的研究过程中发现了R-T的曲线变化亦与级联共振隧穿的产生有一定的关联。 展开更多
关键词 电场畴 级联共振隧穿 超晶格 砷化镓 低温
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