设计合成了Por-N,Por-NBr,Por-Cu-N和Por-Cu-NBr四种水醇溶性小分子卟啉衍生物.对这类卟啉小分子衍生物的紫外可见吸收光谱研究表明,基于金属铜配位的卟啉小分子衍生物较未配位化合物有微弱的蓝移.循环伏安法对这类小分子卟啉衍生物的...设计合成了Por-N,Por-NBr,Por-Cu-N和Por-Cu-NBr四种水醇溶性小分子卟啉衍生物.对这类卟啉小分子衍生物的紫外可见吸收光谱研究表明,基于金属铜配位的卟啉小分子衍生物较未配位化合物有微弱的蓝移.循环伏安法对这类小分子卟啉衍生物的研究表明,基于金属铜配合物的卟啉衍生物的最高占有分子轨道能级均没有明显变化.采用空间电荷限制电流方法对小分子卟啉衍生物的研究表明,基于金属铜配位的卟啉小分子衍生物的电子迁移率得到明显提高.以聚合物PCE10为给体材料,富勒烯衍生物PC71BM为受体材料,以及合成的小分子卟啉衍生物为阴极界面层制备了结构为ITO/PEDOT:PSS/PCE10:PC71BM/卟啉小分子衍生物/Al的聚合物太阳电池器件.器件研究结果表明,化合物Por-NBr,Por-Cu-N与Por-Cu-NBr作为电子传输层的器件的光电转换效率达到9%以上,其中以Por-Cu-N作为阴极界面层的器件达到的最高效率为9.12%,相应器件的短路电流密度,开路电压以及填充因子分别为16.91 m A·cm-2,0.79 V和68.1%.表明这类水醇溶性小分子卟啉衍生物作为聚合物太阳电池的阴极界面层有着广阔的应用前景.展开更多
Efficient white-polymer-light-emitting devices (WPLEDs) have been fabricated with a single emitting layer containing a hole-transporting host polymer,poly(N-vinylcarbzole),and an electron-transporting auxiliary,1,3-bi...Efficient white-polymer-light-emitting devices (WPLEDs) have been fabricated with a single emitting layer containing a hole-transporting host polymer,poly(N-vinylcarbzole),and an electron-transporting auxiliary,1,3-bis[(4-tert-butylphenyl)-1,3,4-oxadiazolyl]-phenylene,codoped with two phosphorescent dyes:Iridium(III)bis (2-(4,6-difluorophenyl)-pyridinato-N,C2') picolinate (FIrpic) and home-made Ir-G2 for blue and red emission,respectively.With the structure of ITO/PEDOT:PSS 4083(40 nm)/emission layer(80 nm)/Ba(4 nm)/Al(120 nm),the device showed a maximal luminous efficiency (LE) of 13.5 cd A-1(corresponding to an external quantum efficiency (EQE) of 6.8%),and a peak power efficiency (PE) of 6.5 lm W-1 at 6.0 V.Meanwhile,the device exhibited pure white emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.34,0.35) at a current density of 12 mA cm-2,which is very close to the equi-energy white point with CIE coordinates of (0.33,0.33).The device performance can be further optimized when more balanced hole/electron injection is achieved by incorporating a lower conducting type anode buffer layer (PEDOT:PSS) and incorporating poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorenene)-alt-2,7-(9,9-dioctyfluorene)] (PFN) as an electron injection layer at the cathode.The optimized device showed an LE of 24.6 cd A-1 (with an EQE of 14.1%),while the peak power efficiency reached 12.66 lm W-1.Moreover,the WPLEDs showed good electroluminescence (EL) stability over a wide range of operating current density and luminance.展开更多
文摘设计合成了Por-N,Por-NBr,Por-Cu-N和Por-Cu-NBr四种水醇溶性小分子卟啉衍生物.对这类卟啉小分子衍生物的紫外可见吸收光谱研究表明,基于金属铜配位的卟啉小分子衍生物较未配位化合物有微弱的蓝移.循环伏安法对这类小分子卟啉衍生物的研究表明,基于金属铜配合物的卟啉衍生物的最高占有分子轨道能级均没有明显变化.采用空间电荷限制电流方法对小分子卟啉衍生物的研究表明,基于金属铜配位的卟啉小分子衍生物的电子迁移率得到明显提高.以聚合物PCE10为给体材料,富勒烯衍生物PC71BM为受体材料,以及合成的小分子卟啉衍生物为阴极界面层制备了结构为ITO/PEDOT:PSS/PCE10:PC71BM/卟啉小分子衍生物/Al的聚合物太阳电池器件.器件研究结果表明,化合物Por-NBr,Por-Cu-N与Por-Cu-NBr作为电子传输层的器件的光电转换效率达到9%以上,其中以Por-Cu-N作为阴极界面层的器件达到的最高效率为9.12%,相应器件的短路电流密度,开路电压以及填充因子分别为16.91 m A·cm-2,0.79 V和68.1%.表明这类水醇溶性小分子卟啉衍生物作为聚合物太阳电池的阴极界面层有着广阔的应用前景.
基金Fund of Ministry of Education of China (20090172120012)the National Basic Research Program of Chima (2009CB623602)+4 种基金the National Natural Science Foundation of China (60906032)the Fundamental Research Funds for the Central Universities for the financial support. Wong W.-Y. thanks the Hong Kong Research Grants Council (HKBU202709)the University Grants Committee of HKSAR,China (AoE/P-03/08)Hong Kong Baptist University (FRG2/08-09/111)the Croucher Foundation for the Croucher Senior Research Fellowship
文摘Efficient white-polymer-light-emitting devices (WPLEDs) have been fabricated with a single emitting layer containing a hole-transporting host polymer,poly(N-vinylcarbzole),and an electron-transporting auxiliary,1,3-bis[(4-tert-butylphenyl)-1,3,4-oxadiazolyl]-phenylene,codoped with two phosphorescent dyes:Iridium(III)bis (2-(4,6-difluorophenyl)-pyridinato-N,C2') picolinate (FIrpic) and home-made Ir-G2 for blue and red emission,respectively.With the structure of ITO/PEDOT:PSS 4083(40 nm)/emission layer(80 nm)/Ba(4 nm)/Al(120 nm),the device showed a maximal luminous efficiency (LE) of 13.5 cd A-1(corresponding to an external quantum efficiency (EQE) of 6.8%),and a peak power efficiency (PE) of 6.5 lm W-1 at 6.0 V.Meanwhile,the device exhibited pure white emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.34,0.35) at a current density of 12 mA cm-2,which is very close to the equi-energy white point with CIE coordinates of (0.33,0.33).The device performance can be further optimized when more balanced hole/electron injection is achieved by incorporating a lower conducting type anode buffer layer (PEDOT:PSS) and incorporating poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorenene)-alt-2,7-(9,9-dioctyfluorene)] (PFN) as an electron injection layer at the cathode.The optimized device showed an LE of 24.6 cd A-1 (with an EQE of 14.1%),while the peak power efficiency reached 12.66 lm W-1.Moreover,the WPLEDs showed good electroluminescence (EL) stability over a wide range of operating current density and luminance.
