The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor...The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor increases with the content of Nd_2O_3 in the range of 0～0.04 (%,mol fraction). However when the content of Nd_2O_3 is more than 0.04 (%,mol fraction),the varistor voltage of ZnO varistor decreases with the content increase. The microstructure analysis indicates that a small amount of new compound with Nd exists at ZnO grain boundary and hinders the movement of grain boundary,which decreases the size of ZnO grain and makes the grain size and distribution homogeneous,as a result,additive (Nd_2O_3) raises the varistor voltage of the varistor greatly.展开更多
以ZnO粉末为主要原料,以TiO2、Bi2O3、MnO2、Co2O3、Sb2O3为组元,在常规电子陶瓷生产工艺下制备低压化ZnO压敏陶瓷。将掺杂TiO2的陶瓷片与未掺杂TiO2的陶瓷片进行对比分析,确定最佳掺杂量。采用能谱仪分析瓷片的微区成分,采用SEM观察瓷...以ZnO粉末为主要原料,以TiO2、Bi2O3、MnO2、Co2O3、Sb2O3为组元,在常规电子陶瓷生产工艺下制备低压化ZnO压敏陶瓷。将掺杂TiO2的陶瓷片与未掺杂TiO2的陶瓷片进行对比分析,确定最佳掺杂量。采用能谱仪分析瓷片的微区成分,采用SEM观察瓷片断口形貌,利用压敏电阻直流参数仪测量瓷片的电学性能。研究结果表明,瓷片内部主要存在富Bi晶界、Bi贫化晶界和晶粒直接接触晶界;TiO2对ZnO晶粒有助长作用,不掺杂纳米TiO2陶瓷是11.4μm,掺杂纳米TiO2高达30.5μm;当TiO2掺杂量为1.5%mol时瓷片电学性能较优,即压敏电压为31.2 V/mm、漏电流为0.028 m A及为非线性系数为20.1。展开更多
文摘The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor increases with the content of Nd_2O_3 in the range of 0～0.04 (%,mol fraction). However when the content of Nd_2O_3 is more than 0.04 (%,mol fraction),the varistor voltage of ZnO varistor decreases with the content increase. The microstructure analysis indicates that a small amount of new compound with Nd exists at ZnO grain boundary and hinders the movement of grain boundary,which decreases the size of ZnO grain and makes the grain size and distribution homogeneous,as a result,additive (Nd_2O_3) raises the varistor voltage of the varistor greatly.
文摘以ZnO粉末为主要原料,以TiO2、Bi2O3、MnO2、Co2O3、Sb2O3为组元,在常规电子陶瓷生产工艺下制备低压化ZnO压敏陶瓷。将掺杂TiO2的陶瓷片与未掺杂TiO2的陶瓷片进行对比分析,确定最佳掺杂量。采用能谱仪分析瓷片的微区成分,采用SEM观察瓷片断口形貌,利用压敏电阻直流参数仪测量瓷片的电学性能。研究结果表明,瓷片内部主要存在富Bi晶界、Bi贫化晶界和晶粒直接接触晶界;TiO2对ZnO晶粒有助长作用,不掺杂纳米TiO2陶瓷是11.4μm,掺杂纳米TiO2高达30.5μm;当TiO2掺杂量为1.5%mol时瓷片电学性能较优,即压敏电压为31.2 V/mm、漏电流为0.028 m A及为非线性系数为20.1。
