This paper is a further development of the kinetics theory of thermal oxidation of silicon. The existing theories cannot correctly describe the oxidation law of ultra-thin (thinner than the oxide-Deby length) oxide la...This paper is a further development of the kinetics theory of thermal oxidation of silicon. The existing theories cannot correctly describe the oxidation law of ultra-thin (thinner than the oxide-Deby length) oxide layers, the experimental results of Jorgensen and the dependence of oxidation rate on oxygen partial pressures. This work surmounts these difficulties and makes the theory more universal. If some effects taken into account in this model are neglected, the results of other models can be derived from this model.展开更多
本文探索了一种能用于大规模 MOS 集成电路的栅氧化技术—补充后的两步 TCE法。笔者采用该法,在一般工厂的工艺条件下,制得了90%以上的 MOS 电容,击穿电场大于6MV/cm,可动电荷密度约为10^(10)cm^(-2),固定电荷密度约为10^(11)cm^(-2)的...本文探索了一种能用于大规模 MOS 集成电路的栅氧化技术—补充后的两步 TCE法。笔者采用该法,在一般工厂的工艺条件下,制得了90%以上的 MOS 电容,击穿电场大于6MV/cm,可动电荷密度约为10^(10)cm^(-2),固定电荷密度约为10^(11)cm^(-2)的优质超薄氧化层。展开更多
基金Project supported by the National Natural Science Foundation of China.
文摘This paper is a further development of the kinetics theory of thermal oxidation of silicon. The existing theories cannot correctly describe the oxidation law of ultra-thin (thinner than the oxide-Deby length) oxide layers, the experimental results of Jorgensen and the dependence of oxidation rate on oxygen partial pressures. This work surmounts these difficulties and makes the theory more universal. If some effects taken into account in this model are neglected, the results of other models can be derived from this model.
