采用噪声抵消及多重功耗优化技术,提出了一种超宽带低噪声低功耗放大器。它主要包括采用RL网络的共栅输入级、电流复用型噪声抵消级、放大输出级以及偏置电路4个部分。验证结果表明,该放大器,在2 GHz^6 GHz频带内,增益(S21)可以在14 d ...采用噪声抵消及多重功耗优化技术,提出了一种超宽带低噪声低功耗放大器。它主要包括采用RL网络的共栅输入级、电流复用型噪声抵消级、放大输出级以及偏置电路4个部分。验证结果表明,该放大器,在2 GHz^6 GHz频带内,增益(S21)可以在14 d B以上;输入回波损耗(S11)小于-10 d B;输出回波损耗(S22)小于-25 d B;噪声系数(NF)小于3.2 d B;在3.8V的工作电压下,功耗仅为14 m W。展开更多
The design and development of a cryogenic Ultra-Low-Noise Signal Amplification (ULNA) and detection system for spectroscopy of ultra-cold systems are reported here for the operation in the 0.5 - 4 GHz spectrum of freq...The design and development of a cryogenic Ultra-Low-Noise Signal Amplification (ULNA) and detection system for spectroscopy of ultra-cold systems are reported here for the operation in the 0.5 - 4 GHz spectrum of frequencies (the “L” and “S” microwave bands). The design is suitable for weak RF signal detection and spectroscopy from ultra-cold systems confined in cryogenic RF cavities, as entailed in a number of physics, physical chemistry and analytical chemistry applications, such as NMR/NQR/EPR and microwave spectroscopy, Paul traps, Bose-Einstein Condensates (BEC’s) and cavity Quantum Electrodynamics (cQED). Using a generic Low-Noise Amplifier (LNA) architecture for a GaAs enhancement mode High-Electron Mobility FET device, our design has especially been devised for scientific applications where ultra-low-noise amplification systems are sought to amplify and detect weak RF signals under various conditions and environments, including cryogenic temperatures, with the least possible noise susceptibility. The amplifier offers a 16 dB gain and a 0.8 dB noise figure at 2.5 GHz, while operating at room temperature, which can improve significantly at low temperatures. Both dc and RF outputs are provided by the amplifier to integrate it in a closed-loop or continuous-wave spectroscopy system or connect it to a variety of instruments, a factor which is lacking in commercial LNA devices. Following the amplification stage, the RF signal detection is carried out with the help of a post-amplifier and detection system based upon a set of Zero-Bias Schottky Barrier Diodes (ZBD’s) and a high-precision ultra-low noise jFET operational amplifier. The scheme offers unique benefits of sensitive detection and very-low noise amplification for measuring extremely weak on-resonance signals with substantial low- noise response and excellent stability while eliminating complicated and expensive heterodyne schemes. The LNA stage is fully capable to be a part of low-temperature experiments while being operated in cryogenic con展开更多
设计了一种采用Ga As p HEMT管芯的小型化宽带超低噪声放大器,利用ADS微波仿真软件进行原理图设计、优化。其中管芯采用单电源加电,避免了双电源输入端隔直电容对噪声的引入;另外,电路结构采用电阻负反馈拓展了带宽,同时也增加了电路的...设计了一种采用Ga As p HEMT管芯的小型化宽带超低噪声放大器,利用ADS微波仿真软件进行原理图设计、优化。其中管芯采用单电源加电,避免了双电源输入端隔直电容对噪声的引入;另外,电路结构采用电阻负反馈拓展了带宽,同时也增加了电路的稳定性,实现较好的输入输出匹配特性。设计的低噪放在7GHz—10GHz频率范围内噪声系数小于0.7d B,增益大于30d B,输入输出回波损耗小于-10d B。低噪声放大器的尺寸仅为23mm×18mm×10mm。展开更多
文摘采用噪声抵消及多重功耗优化技术,提出了一种超宽带低噪声低功耗放大器。它主要包括采用RL网络的共栅输入级、电流复用型噪声抵消级、放大输出级以及偏置电路4个部分。验证结果表明,该放大器,在2 GHz^6 GHz频带内,增益(S21)可以在14 d B以上;输入回波损耗(S11)小于-10 d B;输出回波损耗(S22)小于-25 d B;噪声系数(NF)小于3.2 d B;在3.8V的工作电压下,功耗仅为14 m W。
文摘The design and development of a cryogenic Ultra-Low-Noise Signal Amplification (ULNA) and detection system for spectroscopy of ultra-cold systems are reported here for the operation in the 0.5 - 4 GHz spectrum of frequencies (the “L” and “S” microwave bands). The design is suitable for weak RF signal detection and spectroscopy from ultra-cold systems confined in cryogenic RF cavities, as entailed in a number of physics, physical chemistry and analytical chemistry applications, such as NMR/NQR/EPR and microwave spectroscopy, Paul traps, Bose-Einstein Condensates (BEC’s) and cavity Quantum Electrodynamics (cQED). Using a generic Low-Noise Amplifier (LNA) architecture for a GaAs enhancement mode High-Electron Mobility FET device, our design has especially been devised for scientific applications where ultra-low-noise amplification systems are sought to amplify and detect weak RF signals under various conditions and environments, including cryogenic temperatures, with the least possible noise susceptibility. The amplifier offers a 16 dB gain and a 0.8 dB noise figure at 2.5 GHz, while operating at room temperature, which can improve significantly at low temperatures. Both dc and RF outputs are provided by the amplifier to integrate it in a closed-loop or continuous-wave spectroscopy system or connect it to a variety of instruments, a factor which is lacking in commercial LNA devices. Following the amplification stage, the RF signal detection is carried out with the help of a post-amplifier and detection system based upon a set of Zero-Bias Schottky Barrier Diodes (ZBD’s) and a high-precision ultra-low noise jFET operational amplifier. The scheme offers unique benefits of sensitive detection and very-low noise amplification for measuring extremely weak on-resonance signals with substantial low- noise response and excellent stability while eliminating complicated and expensive heterodyne schemes. The LNA stage is fully capable to be a part of low-temperature experiments while being operated in cryogenic con
文摘设计了一种采用Ga As p HEMT管芯的小型化宽带超低噪声放大器,利用ADS微波仿真软件进行原理图设计、优化。其中管芯采用单电源加电,避免了双电源输入端隔直电容对噪声的引入;另外,电路结构采用电阻负反馈拓展了带宽,同时也增加了电路的稳定性,实现较好的输入输出匹配特性。设计的低噪放在7GHz—10GHz频率范围内噪声系数小于0.7d B,增益大于30d B,输入输出回波损耗小于-10d B。低噪声放大器的尺寸仅为23mm×18mm×10mm。
