发生的一起35 k V电缆终端局部过热认为是电压致热性危急缺陷。停电解体检查发现因工艺问题使半导体出现尖端,形成局部放电造成电缆过热。对以往电缆终端故障综合分析,发现电缆安装工艺质量关键在于控制电缆应力锥的质量。文中通过解剖...发生的一起35 k V电缆终端局部过热认为是电压致热性危急缺陷。停电解体检查发现因工艺问题使半导体出现尖端,形成局部放电造成电缆过热。对以往电缆终端故障综合分析,发现电缆安装工艺质量关键在于控制电缆应力锥的质量。文中通过解剖冷缩终端释义了应力锥安装位置的质量关键点,并推荐了工程中常见的电缆终端延长方案和在运电缆终端应力锥安装工艺隐患排查方法。展开更多
The positron annihilation lifetimes and the Doppler broadening by slow positron beam are measured in thin Fe films with thickness 500 nm, a thin Hf film with thickness 100 nm, and the bilayer Fe (50 nm)/Hf (50 nm) on ...The positron annihilation lifetimes and the Doppler broadening by slow positron beam are measured in thin Fe films with thickness 500 nm, a thin Hf film with thickness 100 nm, and the bilayer Fe (50 nm)/Hf (50 nm) on quartz glass substrate. We have analyzed the behavior in vacancy-type defects in each layer through some deposition temperatures and annealing. It is observed that the thin Fe film, the thin Hf film, and the bilayer Fe (50 nm)/Hf (50 nm) already contain many vacancy-type defects. We have investigated the change of densities of the vacancy-carbon complex and the small vacancy-cluster with carbons, through solid-state amorphization of Fe (50 nm)/Hf (50 nm) bilayer.展开更多
文摘发生的一起35 k V电缆终端局部过热认为是电压致热性危急缺陷。停电解体检查发现因工艺问题使半导体出现尖端,形成局部放电造成电缆过热。对以往电缆终端故障综合分析,发现电缆安装工艺质量关键在于控制电缆应力锥的质量。文中通过解剖冷缩终端释义了应力锥安装位置的质量关键点,并推荐了工程中常见的电缆终端延长方案和在运电缆终端应力锥安装工艺隐患排查方法。
文摘The positron annihilation lifetimes and the Doppler broadening by slow positron beam are measured in thin Fe films with thickness 500 nm, a thin Hf film with thickness 100 nm, and the bilayer Fe (50 nm)/Hf (50 nm) on quartz glass substrate. We have analyzed the behavior in vacancy-type defects in each layer through some deposition temperatures and annealing. It is observed that the thin Fe film, the thin Hf film, and the bilayer Fe (50 nm)/Hf (50 nm) already contain many vacancy-type defects. We have investigated the change of densities of the vacancy-carbon complex and the small vacancy-cluster with carbons, through solid-state amorphization of Fe (50 nm)/Hf (50 nm) bilayer.
