Ta-doped In_2O_3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C.The influence of post-annealing on the structural,morphologic,electrical and o...Ta-doped In_2O_3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C.The influence of post-annealing on the structural,morphologic,electrical and optical properties of the films was investigated using X-ray diffraction,field emission scanning electron microscopy,Hall measurements and optical transmission spectroscopy.The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction.The lowest resistivity,5.1×10 4 cm,was obtained in the film annealed at 500°C,which is half of that of the un-annealed film (9.9×10 4 cm).The average optical transmittance of the films was over 90%.The optical bandgap was found to decrease with increasing annealing temperature.展开更多
基金supported by the National Natural Science Foundation of China (51003073/E0303)Tianjin Natural Science Foundation (08JCYBJC11400)
文摘Ta-doped In_2O_3 transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C.The influence of post-annealing on the structural,morphologic,electrical and optical properties of the films was investigated using X-ray diffraction,field emission scanning electron microscopy,Hall measurements and optical transmission spectroscopy.The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction.The lowest resistivity,5.1×10 4 cm,was obtained in the film annealed at 500°C,which is half of that of the un-annealed film (9.9×10 4 cm).The average optical transmittance of the films was over 90%.The optical bandgap was found to decrease with increasing annealing temperature.
