Synchrotron radiation photoemission spectroscopy was used to study the formation process of Er2O3/Si（001） imerface and film during epitaxial growth on Si. A shift in the O core-level binding energy was found accompa...Synchrotron radiation photoemission spectroscopy was used to study the formation process of Er2O3/Si（001） imerface and film during epitaxial growth on Si. A shift in the O core-level binding energy was found accompanied by a shift in the Er2O3 valence band maximum. This shift depended on the oxide layer thickness and interfacial structure. An interfacial layer was observed at the initial growth of Er2O3 film on Si, which was supposed to be attributed to the effect of Er atom catalytic oxidation effect.展开更多
基金supported by the Special Project of Shanghai Nano Technology (0852nm02400 and 0752nm012)Shaoxing Science and Technology Commission (2007A21015)+3 种基金Shanghai Rising-Star Program (07QA14026)the National Natural Science Foundation of China (10804072)the Key Fundamental Project of Shanghai (08JC1410400)Shanghai Education Commission (07zz143)
文摘Synchrotron radiation photoemission spectroscopy was used to study the formation process of Er2O3/Si（001） imerface and film during epitaxial growth on Si. A shift in the O core-level binding energy was found accompanied by a shift in the Er2O3 valence band maximum. This shift depended on the oxide layer thickness and interfacial structure. An interfacial layer was observed at the initial growth of Er2O3 film on Si, which was supposed to be attributed to the effect of Er atom catalytic oxidation effect.
