薄膜晶体管显示器(Thin Film Transistor,TFT)基板玻璃表面擦划伤是液晶面板表面质量的重要管控项目之一。论文结合高世代基板玻璃浮法工艺特点,选取高世代玻璃基板加工过程中高频出现的不同形态的表面擦划伤进行研究。论文通过形态和...薄膜晶体管显示器(Thin Film Transistor,TFT)基板玻璃表面擦划伤是液晶面板表面质量的重要管控项目之一。论文结合高世代基板玻璃浮法工艺特点,选取高世代玻璃基板加工过程中高频出现的不同形态的表面擦划伤进行研究。论文通过形态和表面残留物成分分析产生表面擦划伤的原因,并结合产线实际布局及加工特点进行有效管控生产工艺,促进高世代玻璃基板品质提升。展开更多
The failure of thin film-substrate structure occurs mainly at the thin film or the interface. However, the characterizing and estimating methods of failure stress in thin film are neither uniform nor effective because...The failure of thin film-substrate structure occurs mainly at the thin film or the interface. However, the characterizing and estimating methods of failure stress in thin film are neither uniform nor effective because there are some complex effects of such as size, interface and stress state on the failure behavior of thin film-substrate structure. Based on the scanning electron microscope (SEM) in-situ in- vestigation on the failure models of the Cu thin film-substrate structure and the nano scratched testing results, the failure stresses in different thicknesses of the Cu film-substrate were characterized, which were compared and confirmed by other methods, such as Stoney formula and other empiric equations. These results indicate that the novel estimating method of failure stress in thin film based on the critical wavelength of surface unstable analysis is better than other methods. The main reason is that the novel estimating method of failure stress in meso thickness film fully considered the effect factors of free surface unstable behavior and elastic anisotropy of thin film. Therefore, the novel estimating method of failure stress assists people to understand the critical interfacial strength and to set up the failure criterion of thin film-substrate structure.展开更多
文摘薄膜晶体管显示器(Thin Film Transistor,TFT)基板玻璃表面擦划伤是液晶面板表面质量的重要管控项目之一。论文结合高世代基板玻璃浮法工艺特点,选取高世代玻璃基板加工过程中高频出现的不同形态的表面擦划伤进行研究。论文通过形态和表面残留物成分分析产生表面擦划伤的原因,并结合产线实际布局及加工特点进行有效管控生产工艺,促进高世代玻璃基板品质提升。
基金Supported by the National Natural Science Foundation of China (Grant No. 10772091) National Basic Research Program of China (Grant Nos. 2004CB619304-5, 2007CB936803)
文摘The failure of thin film-substrate structure occurs mainly at the thin film or the interface. However, the characterizing and estimating methods of failure stress in thin film are neither uniform nor effective because there are some complex effects of such as size, interface and stress state on the failure behavior of thin film-substrate structure. Based on the scanning electron microscope (SEM) in-situ in- vestigation on the failure models of the Cu thin film-substrate structure and the nano scratched testing results, the failure stresses in different thicknesses of the Cu film-substrate were characterized, which were compared and confirmed by other methods, such as Stoney formula and other empiric equations. These results indicate that the novel estimating method of failure stress in thin film based on the critical wavelength of surface unstable analysis is better than other methods. The main reason is that the novel estimating method of failure stress in meso thickness film fully considered the effect factors of free surface unstable behavior and elastic anisotropy of thin film. Therefore, the novel estimating method of failure stress assists people to understand the critical interfacial strength and to set up the failure criterion of thin film-substrate structure.
