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Thickness-dependent and strain-tunable magnetism in twodimensional van der Waals VSe_(2)
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作者 Wenjuan Ci Huali Yang +5 位作者 Wuhong Xue Ruilong Yang Baohua Lv Peng Wang Run-Wei Li Xiao-Hong Xu 《Nano Research》 SCIE EI CSCD 2022年第8期7597-7603,共7页
Two-dimensional(2D)van der Waals(vdW)magnetic materials with reduced dimensionality often exhibit unexpected properties compared to their bulk counterparts.In particular,the mechanical flexibility of 2D structure,enha... Two-dimensional(2D)van der Waals(vdW)magnetic materials with reduced dimensionality often exhibit unexpected properties compared to their bulk counterparts.In particular,the mechanical flexibility of 2D structure,enhanced ferromagnetism at reduced layer thickness,as well as robust perpendicular magnetic anisotropy are quite appealing for constructing novel spintronic devices.The vdW vanadium diselenide(VSe_(2))is an attractive material whose bulk is paramagnetic while monolayer is ferromagnetic with a Curie temperature(Tc)above room temperature.To explore its possible device applications,a detailed investigation on the thickness-dependent magnetism and strain modulation behavior of VSe_(2)is highly demanded.In this article,the VSe_(2)nanoflakes were controllably prepared via chemical vapor deposition(CVD)method.The few-layer single VSe_(2)nanoflakes were found to exhibit magnetic domain structures at room temperature.Ambient magnetic force microscopy(MFM)phase images reveal a clear thickness-dependent magnetism and the MFM phase contrast is traceable for the nanoflakes of layer thickness below~6 nm.Moreover,applying strain is found efficient in modulating the magnetic moment and coercive field of 2D VSe_(2)at room temperature.These results are helpful for understanding the ferromagnetism of high temperature 2D magnets and for constructing novel straintronic devices or flexible spintronic devices. 展开更多
关键词 room-temperature ferromagnetism thickness-dependent magnetism strain-modulated magnetism two-dimensional(2D)vanadium diselenide(VSe_(2))
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应变调制型磁性隧道结器件建模及其转换特性研究
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作者 徐立 蔡理 +3 位作者 崔焕卿 王森 杨晓阔 冯朝文 《固体电子学研究与进展》 CSCD 北大核心 2017年第6期395-400,423,共7页
基于反映磁性隧道结自由层的磁化强度转换特性的Landau-Lifshitz-Gilbert方程,并参考基尔霍夫电流定律及电容元件伏安特性,建立了应变调制型磁性隧道结器件的HSpice电路仿真模型。分析了器件在不同幅值的输入电压下的转换特性。仿真结... 基于反映磁性隧道结自由层的磁化强度转换特性的Landau-Lifshitz-Gilbert方程,并参考基尔霍夫电流定律及电容元件伏安特性,建立了应变调制型磁性隧道结器件的HSpice电路仿真模型。分析了器件在不同幅值的输入电压下的转换特性。仿真结果表明,当输入电压小于5.84mV时,产生的应力各向异性能不足以克服磁致伸缩层的能量势垒,不能驱动磁化状态转变,器件状态不改变;反之,若输入电压大于临界电压,则能够驱动磁化状态转变。随着输入电压的增大,器件转换到亚稳态的速度也逐渐加快。通过定量分析80mV输入电压下MTJ阻值的变化特性,得到输入电压脉宽为0.35ns时,器件的最高转换频率为1.3GHz,单次转换能耗为56.6aJ。研究结果对今后应变调制型磁性隧道结器件在集成电路中的设计与应用具有重要意义。 展开更多
关键词 应变调制 磁性隧道结 HSpice模型 转换特性
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