Memory leaks are a common type of defect that is hard to detect manually. Existing memory leak detection tools suffer from lack of precise interprocedural analysis and path-sensitivity. To address this problem, we pre...Memory leaks are a common type of defect that is hard to detect manually. Existing memory leak detection tools suffer from lack of precise interprocedural analysis and path-sensitivity. To address this problem, we present a static interprocedural analysis algorithm, that performs fully pathsensitive analysis and captures precise function behaviors, to detect memory leak in C programs. The proposed algorithm uses path-sensitive symbolic execution to track memory actions in different program paths guarded by path conditions. A novel analysis model called memory state transition graph （MSTG） is proposed to describe the tracking process and its results. In order to do interprocedural analysis, the proposed algorithm generates a summary for each procedure from MSTG and applies the summary at the procedure＇s call sites. A prototype tool called Melton is implemented for this procedure. Melton was applied to five open source C programs and 41 leaks were found. More than 90% of these leaks were subsequently confirmed and fixed by their maintainers. For comparison with other tools, Melton was also applied to some programs in standard performance evaluation corporation （SPEC） CPU 2000 benchmark suite and detected more leaks than the state of the art approaches.展开更多
The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area o...The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.展开更多
To predict the soft error rate for applications, it is essential to study the energy dependence of the single-event-upset(SEU) cross-section. In this work, we present a direct measurement of the SEU cross-section with...To predict the soft error rate for applications, it is essential to study the energy dependence of the single-event-upset(SEU) cross-section. In this work, we present a direct measurement of the SEU cross-section with the Back-n white neutron source at the China Spallation Neutron Source. The measured cross section is consistent with the soft error data from the manufacturer and the result suggests that the threshold energy of the SEU is about 0.5 Me V, which confirms the statement in Iwashita’s report that the threshold energy for neutron soft error is much below that of the(n, α) cross-section of silicon.In addition, an index of the effective neutron energy is suggested to characterize the similarity between a spallation neutron beam and the standard atmospheric neutron environment.展开更多
Artificial intelligence(AI)processes data-centric applications with minimal effort.However,it poses new challenges to system design in terms of computational speed and energy efficiency.The traditional von Neumann arc...Artificial intelligence(AI)processes data-centric applications with minimal effort.However,it poses new challenges to system design in terms of computational speed and energy efficiency.The traditional von Neumann architecture cannot meet the requirements of heavily datacentric applications due to the separation of computation and storage.The emergence of computing inmemory(CIM)is significant in circumventing the von Neumann bottleneck.A commercialized memory architecture,static random-access memory(SRAM),is fast and robust,consumes less power,and is compatible with state-of-the-art technology.This study investigates the research progress of SRAM-based CIM technology in three levels:circuit,function,and application.It also outlines the problems,challenges,and prospects of SRAM-based CIM macros.展开更多
A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event ups...A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event upset(SEU)cross sections of this memory are obtained via heavy ion irradiation with a linear energy transfer(LET)value ranging from 1.7 to 83.4 MeV/(mg/cm^(2)).Experimental results show that the upset threshold(LETth)of a 4 KB block is approximately 6 MeV/(mg/cm^(2)),which is much better than that of a standard unhardened SRAM with an identical technology node.A 1 KB block has a higher LETth of 25 MeV/(mg/cm^(2))owing to the use of the error detection and correction(EDAC)code.For a Ta ion irradiation test with the highest LET value(83.4 MeV/(mg/cm^(2))),the benefit of the EDAC code is reduced significantly because the multi-bit upset proportion in the SEU is increased remarkably.Compared with normal incident ions,the memory exhibits a higher SEU sensitivity in the tilt angle irradiation test.Moreover,the SEU cross section indicates a significant dependence on the data pattern.When comprehensively considering HSPICE simulation results and the sensitive area distributions of the DICE cell,it is shown that the data pattern dependence is primarily associated with the arrangement of sensitive transistor pairs in the layout.Finally,some suggestions are provided to further improve the radiation resistance of the memory.By implementing a particular design at the layout level,the SEU tolerance of the memory is improved significantly at a low area cost.Therefore,the designed 65 nm SRAM is suitable for electronic systems operating in serious radiation environments.展开更多
Uniform memory multicore neural network accelerators(UNNAs)furnish huge computing power to emerging neural network applications.Meanwhile,with neural network architectures going deeper and wider,the limited memory cap...Uniform memory multicore neural network accelerators(UNNAs)furnish huge computing power to emerging neural network applications.Meanwhile,with neural network architectures going deeper and wider,the limited memory capacity has become a constraint to deploy models on UNNA platforms.Therefore how to efficiently manage memory space and how to reduce workload footprints are urgently significant.In this paper,we propose Tetris:a heuristic static memory management framework for UNNA platforms.Tetris reconstructs execution flows and synchronization relationships among cores to analyze each tensor’s liveness interval.Then the memory management problem is converted to a sequence permutation problem.Tetris uses a genetic algorithm to explore the permutation space to optimize the memory management strategy and reduce memory footprints.We evaluate several typical neural networks and the experimental results demonstrate that Tetris outperforms the state-of-the-art memory allocation methods,and achieves an average memory reduction ratio of 91.9%and 87.9%for a quad-core and a 16-core Cambricon-X platform,respectively.展开更多
To test the magnetic signals leaked from the surface of specimens during loading, the experiments of the static tensile of medium carbon 45# steel were carried out. The results show that the magnetic field strength va...To test the magnetic signals leaked from the surface of specimens during loading, the experiments of the static tensile of medium carbon 45# steel were carried out. The results show that the magnetic field strength values rapidly vary when the load began, and the curves of the magnetic field strength change from irregularity to regularity with the increase of the load. Furthermore, by comparing with the state of on-line testing, it is found that the magnetic signals of out-of-line testing has more practicability. In the course of loading, though the dots of passing zero of the magnetic field strength continually changed their positions and quantities, the last rupture places were always approached by the dots of passing zero since the elastic loading phase. Some certain relations should exist between external stress and changing of magnetic signals inside the material, and correlative explanation is made based on dislocation theory and the mechanism of magnetic domain action, which provides the basis for further research of magnetic memory.展开更多
Each specific structure of organisms is the best choice under specific circumstances.The excellent characteristic structures of these organisms have great application potential in the design and multi-functional optim...Each specific structure of organisms is the best choice under specific circumstances.The excellent characteristic structures of these organisms have great application potential in the design and multi-functional optimization of energy-absorbing structures such as vehicle collisions,satellite landings,and military equipment.In this paper,using the principle of structural bionics,using the advantages of the honeycomb structure and the light weight and high strength of beetle elytra,four bionic lattice structures are studied:CH,ZPRH,SCH and IBE.Using NiTi shape memory alloy,a unique material as the base material,samples are prepared using selective laser melting(SLM)technology.By comparing the test results of the quasi-static compression test with the results of the numerical simulation,it is found that compared with the other three bionic lattice structures,the SCH structure has the best energy absorption effect in the effective stroke in the test,and the specific energy absorption can reach 6.32 J/g.ZPRH,SCH,and IBE structures not only have good and stable deformation behavior,but also have excellent impact resistance and shape memory properties.The design of these structures provides a reference for the design of anti-shock cushioning structures with self-recovery functions in the future.展开更多
基金This work was partially supported by the 973 Program of China （2014CB340701） and the National Natural Science Foundation of China （Grant No. 61003026）.
文摘Memory leaks are a common type of defect that is hard to detect manually. Existing memory leak detection tools suffer from lack of precise interprocedural analysis and path-sensitivity. To address this problem, we present a static interprocedural analysis algorithm, that performs fully pathsensitive analysis and captures precise function behaviors, to detect memory leak in C programs. The proposed algorithm uses path-sensitive symbolic execution to track memory actions in different program paths guarded by path conditions. A novel analysis model called memory state transition graph （MSTG） is proposed to describe the tracking process and its results. In order to do interprocedural analysis, the proposed algorithm generates a summary for each procedure from MSTG and applies the summary at the procedure＇s call sites. A prototype tool called Melton is implemented for this procedure. Melton was applied to five open source C programs and 41 leaks were found. More than 90% of these leaks were subsequently confirmed and fixed by their maintainers. For comparison with other tools, Melton was also applied to some programs in standard performance evaluation corporation （SPEC） CPU 2000 benchmark suite and detected more leaks than the state of the art approaches.
基金supported by the National Natural Science Foundation of China(Nos.12105341 and 12035019)the opening fund of Key Laboratory of Silicon Device and Technology,Chinese Academy of Sciences(No.KLSDTJJ2022-3).
文摘The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.
基金supported by the National Natural Science Foundation of China (Grant Nos. 2032165 and 62004158)the National Key Scientific Instrument and Equipment Development Project of China (Grant No. 52127817)+1 种基金the State Key Laboratory of Particle Detection and Electronics (Grant Nos. SKLPDE-ZZ-201801 and SKLPDE-ZZ-202008)the Special Funds for Science and Technology Innovation Strategy of Guangdong Province, China (Grant No. 2018A0303130030)。
文摘To predict the soft error rate for applications, it is essential to study the energy dependence of the single-event-upset(SEU) cross-section. In this work, we present a direct measurement of the SEU cross-section with the Back-n white neutron source at the China Spallation Neutron Source. The measured cross section is consistent with the soft error data from the manufacturer and the result suggests that the threshold energy of the SEU is about 0.5 Me V, which confirms the statement in Iwashita’s report that the threshold energy for neutron soft error is much below that of the(n, α) cross-section of silicon.In addition, an index of the effective neutron energy is suggested to characterize the similarity between a spallation neutron beam and the standard atmospheric neutron environment.
基金the National Key Research and Development Program of China(2018YFB2202602)The State Key Program of the National Natural Science Foundation of China(NO.61934005)+1 种基金The National Natural Science Foundation of China(NO.62074001)Joint Funds of the National Natural Science Foundation of China under Grant U19A2074.
文摘Artificial intelligence(AI)processes data-centric applications with minimal effort.However,it poses new challenges to system design in terms of computational speed and energy efficiency.The traditional von Neumann architecture cannot meet the requirements of heavily datacentric applications due to the separation of computation and storage.The emergence of computing inmemory(CIM)is significant in circumventing the von Neumann bottleneck.A commercialized memory architecture,static random-access memory(SRAM),is fast and robust,consumes less power,and is compatible with state-of-the-art technology.This study investigates the research progress of SRAM-based CIM technology in three levels:circuit,function,and application.It also outlines the problems,challenges,and prospects of SRAM-based CIM macros.
基金the National Natural Science Foundation of China(Nos.12035019,11690041,and 11805244).
文摘A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk complementary metal oxide semiconductor technology.The single event upset(SEU)cross sections of this memory are obtained via heavy ion irradiation with a linear energy transfer(LET)value ranging from 1.7 to 83.4 MeV/(mg/cm^(2)).Experimental results show that the upset threshold(LETth)of a 4 KB block is approximately 6 MeV/(mg/cm^(2)),which is much better than that of a standard unhardened SRAM with an identical technology node.A 1 KB block has a higher LETth of 25 MeV/(mg/cm^(2))owing to the use of the error detection and correction(EDAC)code.For a Ta ion irradiation test with the highest LET value(83.4 MeV/(mg/cm^(2))),the benefit of the EDAC code is reduced significantly because the multi-bit upset proportion in the SEU is increased remarkably.Compared with normal incident ions,the memory exhibits a higher SEU sensitivity in the tilt angle irradiation test.Moreover,the SEU cross section indicates a significant dependence on the data pattern.When comprehensively considering HSPICE simulation results and the sensitive area distributions of the DICE cell,it is shown that the data pattern dependence is primarily associated with the arrangement of sensitive transistor pairs in the layout.Finally,some suggestions are provided to further improve the radiation resistance of the memory.By implementing a particular design at the layout level,the SEU tolerance of the memory is improved significantly at a low area cost.Therefore,the designed 65 nm SRAM is suitable for electronic systems operating in serious radiation environments.
基金the Beijing Natural Science Foundation under Grant No.JQ18013the National Natural Science Foundation of China under Grant Nos.61925208,61732007,61732002 and 61906179+1 种基金the Strategic Priority Research Program of Chinese Academy of Sciences(CAS)under Grant No.XDB32050200the Youth Innovation Promotion Association CAS,Beijing Academy of Artificial Intelligence(BAAI)and Xplore Prize.
文摘Uniform memory multicore neural network accelerators(UNNAs)furnish huge computing power to emerging neural network applications.Meanwhile,with neural network architectures going deeper and wider,the limited memory capacity has become a constraint to deploy models on UNNA platforms.Therefore how to efficiently manage memory space and how to reduce workload footprints are urgently significant.In this paper,we propose Tetris:a heuristic static memory management framework for UNNA platforms.Tetris reconstructs execution flows and synchronization relationships among cores to analyze each tensor’s liveness interval.Then the memory management problem is converted to a sequence permutation problem.Tetris uses a genetic algorithm to explore the permutation space to optimize the memory management strategy and reduce memory footprints.We evaluate several typical neural networks and the experimental results demonstrate that Tetris outperforms the state-of-the-art memory allocation methods,and achieves an average memory reduction ratio of 91.9%and 87.9%for a quad-core and a 16-core Cambricon-X platform,respectively.
文摘To test the magnetic signals leaked from the surface of specimens during loading, the experiments of the static tensile of medium carbon 45# steel were carried out. The results show that the magnetic field strength values rapidly vary when the load began, and the curves of the magnetic field strength change from irregularity to regularity with the increase of the load. Furthermore, by comparing with the state of on-line testing, it is found that the magnetic signals of out-of-line testing has more practicability. In the course of loading, though the dots of passing zero of the magnetic field strength continually changed their positions and quantities, the last rupture places were always approached by the dots of passing zero since the elastic loading phase. Some certain relations should exist between external stress and changing of magnetic signals inside the material, and correlative explanation is made based on dislocation theory and the mechanism of magnetic domain action, which provides the basis for further research of magnetic memory.
基金National Key R&D Program of China(No.2018YFB1105100)National Natural Science Foundation of China(No.51975246)+5 种基金Jilin Province Science and Technology Development Plan(No.YDZJ202101ZYTS134)State Key Laboratory of Automotive Simulation and Control—ziyoutansuoxiangmu(202013)Open Project Program of Key Laboratory for Cross-Scale Micro and Nano Manufacturing,Ministry of Education,Changchun University of Science and Technology(CMNM-KF202109)Program for JLU Science and Technology Innovative Research Team(No.2019TD-34)Interdisciplinary Research Fund for Doctoral Postgraduates of Jilin University(No.101832020DJX052)Interdisciplinary Cultivation Project for Young Teachers and Students(No.415010300078)。
文摘Each specific structure of organisms is the best choice under specific circumstances.The excellent characteristic structures of these organisms have great application potential in the design and multi-functional optimization of energy-absorbing structures such as vehicle collisions,satellite landings,and military equipment.In this paper,using the principle of structural bionics,using the advantages of the honeycomb structure and the light weight and high strength of beetle elytra,four bionic lattice structures are studied:CH,ZPRH,SCH and IBE.Using NiTi shape memory alloy,a unique material as the base material,samples are prepared using selective laser melting(SLM)technology.By comparing the test results of the quasi-static compression test with the results of the numerical simulation,it is found that compared with the other three bionic lattice structures,the SCH structure has the best energy absorption effect in the effective stroke in the test,and the specific energy absorption can reach 6.32 J/g.ZPRH,SCH,and IBE structures not only have good and stable deformation behavior,but also have excellent impact resistance and shape memory properties.The design of these structures provides a reference for the design of anti-shock cushioning structures with self-recovery functions in the future.
