Single-pulse and multi-pulse damage behaviors of ＂standard＂ （with A/4 stack structure） and ＂modified＂ （with reduced standing-wave field） HfO2/SiO2 mirror coatings are investigated using a commercial 50-fs, 800...Single-pulse and multi-pulse damage behaviors of ＂standard＂ （with A/4 stack structure） and ＂modified＂ （with reduced standing-wave field） HfO2/SiO2 mirror coatings are investigated using a commercial 50-fs, 800-nm Ti：sapphire laser system. Precise morphologies of damaged sites display strikingly different features when the samples are subjected to various number of incident pulses, which are explained reasonably by the standing-wave field distribution within the coatings. Meanwhile, the single-pulse laser-induced damage threshold of the ＂standard＂ mirror is improved by about 14% while suppressing the normalized electric field intensity at the outmost interface of the HfO2 and SiO2 layers by 37%. To discuss the damage mechanism, a theoretical model based on photoionization, avalanche ionization, and decays of electrons is adopted to simulate the evolution curves of the conduction-band electron densitv during r^ulse dHratian.展开更多
文摘Single-pulse and multi-pulse damage behaviors of ＂standard＂ （with A/4 stack structure） and ＂modified＂ （with reduced standing-wave field） HfO2/SiO2 mirror coatings are investigated using a commercial 50-fs, 800-nm Ti：sapphire laser system. Precise morphologies of damaged sites display strikingly different features when the samples are subjected to various number of incident pulses, which are explained reasonably by the standing-wave field distribution within the coatings. Meanwhile, the single-pulse laser-induced damage threshold of the ＂standard＂ mirror is improved by about 14% while suppressing the normalized electric field intensity at the outmost interface of the HfO2 and SiO2 layers by 37%. To discuss the damage mechanism, a theoretical model based on photoionization, avalanche ionization, and decays of electrons is adopted to simulate the evolution curves of the conduction-band electron densitv during r^ulse dHratian.
