Crystalline silicon（c-Si） is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it di...Crystalline silicon（c-Si） is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional（1 D） geometry, or the line-shape, of Si nanowire（SiNW） can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1 D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquidsolid（IPSLS） mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited.展开更多
Laser-induced forward transfer(LIFT)is a direct-writing technique capable of depositing a single dot smaller than the laser wavelength at small shot energy through the laser-induced dot transfer(LIDT)technique.To depo...Laser-induced forward transfer(LIFT)is a direct-writing technique capable of depositing a single dot smaller than the laser wavelength at small shot energy through the laser-induced dot transfer(LIDT)technique.To deposit a single nanodot in a single shot of laser irradiation,a liquid nanodrop is transferred from donor to receiver and finally solidified via a solid–liquid–solid(SLS)process.In conventional LIDT experiments,multi-shots with step scanning have been used to form array structures.However,interference laser processing can achieve an arrayed process and generate a periodic structure in a single shot.In this study,a femtosecond laser interference pattern was first applied to LIDT,and an array of nanodots was successfully deposited in a single shot,producing the following unit structures:a single dot,adjoining dots,and stacking dots.The diameter of the smallest nanodot was 355 nm,and the narrowest gap between two adjoining nanodots was 17.2 nm.The LIDT technique produces high-purity,catalyst-free that do not require post-cleaning or alignment processes.Given these significant advantages,LIDT can expand the usability of nanodots in a wide range of fields.展开更多
基金supported by the National Basic Research 973 Program(No.2014CB921101)the National Natural Science Foundation of China(No.61674075)+5 种基金the National Key Research and Development Program of China(No.2017YFA0205003)the Jiangsu Excellent Young Scholar Program(No.BK20160020)the Scientific and Technological Support Program in Jiangsu Province(No.BE2014147-2)the Jiangsu Shuangchuang Team's Personal Programthe Fundamental Research Funds for the Central Universitiesthe China Scholarship Council and the Postgraduate Program of Jiangsu Province(No.KYZZ160052)
文摘Crystalline silicon（c-Si） is unambiguously the most important semiconductor that underpins the development of modern microelectronics and optoelectronics, though the rigid and brittle nature of bulk c-Si makes it difficult to implement directly for stretchable applications. Fortunately, the one-dimensional（1 D） geometry, or the line-shape, of Si nanowire（SiNW） can be engineered into elastic springs, which indicates an exciting opportunity to fabricate highly stretchable 1 D c-Si channels. The implementation of such line-shape-engineering strategy demands both a tiny diameter of the SiNWs, in order to accommodate the strains under large stretching, and a precise growth location, orientation and path control to facilitate device integration. In this review, we will first introduce the recent progresses of an in-plane self-assembly growth of SiNW springs, via a new in-plane solid-liquidsolid（IPSLS） mechanism, where mono-like but elastic SiNW springs are produced by surface-running metal droplets that absorb amorphous Si thin film as precursor. Then, the critical growth control and engineering parameters, the mechanical properties of the SiNW springs and the prospects of developing c-Si based stretchable electronics, will be addressed. This efficient line-shape-engineering strategy of SiNW springs, accomplished via a low temperature batch-manufacturing, holds a strong promise to extend the legend of modern Si technology into the emerging stretchable electronic applications, where the high carrier mobility, excellent stability and established doping and passivation controls of c-Si can be well inherited.
基金the Japan Society for the Promotion of Science(JSPS)through a Grant-in-Aid for Scientific Research(B)(No.16H038850)Amada Foundation for Metal Work Technology(AF-2018212).
文摘Laser-induced forward transfer(LIFT)is a direct-writing technique capable of depositing a single dot smaller than the laser wavelength at small shot energy through the laser-induced dot transfer(LIDT)technique.To deposit a single nanodot in a single shot of laser irradiation,a liquid nanodrop is transferred from donor to receiver and finally solidified via a solid–liquid–solid(SLS)process.In conventional LIDT experiments,multi-shots with step scanning have been used to form array structures.However,interference laser processing can achieve an arrayed process and generate a periodic structure in a single shot.In this study,a femtosecond laser interference pattern was first applied to LIDT,and an array of nanodots was successfully deposited in a single shot,producing the following unit structures:a single dot,adjoining dots,and stacking dots.The diameter of the smallest nanodot was 355 nm,and the narrowest gap between two adjoining nanodots was 17.2 nm.The LIDT technique produces high-purity,catalyst-free that do not require post-cleaning or alignment processes.Given these significant advantages,LIDT can expand the usability of nanodots in a wide range of fields.
