Ruddlesden-Popper iridate Sr_(3)Ir_(2)O_(7)is a spin-orbit coupled Mott insulator.Hole doped Sr_(3)Ir_(2)O_(7)provides an ideal platform to study the exotic quantum phenomena that occur near the metal-insulator transi...Ruddlesden-Popper iridate Sr_(3)Ir_(2)O_(7)is a spin-orbit coupled Mott insulator.Hole doped Sr_(3)Ir_(2)O_(7)provides an ideal platform to study the exotic quantum phenomena that occur near the metal-insulator transition(MIT)region.Rh substitution of Ir is an effective method to induce hole doping into Sr_(3)Ir_(2)O_(7).However,the highest doping level reported in Sr_(3)(Ir_(1-x)Rh_(x))_(2)O_(7)single crystals was only around 3%,which is far from the MIT region.In this paper,we report the successful growth of single crystals of Sr3(Ir_(1-x)Rh_(x))_(2)O_(7)with a doping level of~9%.The samples have been fully characterized,demonstrating the high quality of the single crystals.Transport measurements have been carried out,confirming the tendency of MIT in these samples.The electronic structure has also been examined by angle-resolved photoemission spectroscopy(ARPES)measurements.Our results establish a platform to investigate the heavily hole doped Sr_(3)Ir_(2)O_(7) compound,which also provide new insights into the MIT with hole doping in this material system.展开更多
Topological insulators are insulating in the bulkbut have metallic surface states. Its unique physicochemicalproperties can find numerous applications in electronics,spintronics, photonics, the energy sciences, and th...Topological insulators are insulating in the bulkbut have metallic surface states. Its unique physicochemicalproperties can find numerous applications in electronics,spintronics, photonics, the energy sciences, and thesignal control of transportation. We report an experimentalapproach to synthesize the high-quality single crystal oftopological insulator Bi2Te3 by using self-flux method. Weobtained the optimal preparation conditions by adjustingthe parameters of heat treatment, and successfully preparedthe single-crystal Bi2Te3 sample. The as-grown sampleshave a surface with bright metallic luster and are soft andfragile. Furthermore, Bi2Te3 has the obvious layer structurefrom SEM results. The data of X-ray diffraction andscanning electron microscope show that Bi2Te3 singlecrystal grows along the c-axis with the order of Te（1）–Bi–Te（2）–Bi–Te（1） and crystallizes in the hexagonal systemwith space group of R/3 m. The q–T curve shows that qdecreases with temperature, showing metallic behaviorover the whole temperature range.展开更多
This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN w...This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.展开更多
Vanadium dioxide (VO_(2)) has emerged as a promising micro-actuator material for its large amplitude and high work density across the transition between the insulating (M_(1) and M_(2)) and metallic (R) phase. Even th...Vanadium dioxide (VO_(2)) has emerged as a promising micro-actuator material for its large amplitude and high work density across the transition between the insulating (M_(1) and M_(2)) and metallic (R) phase. Even though M_(2)–R transition offers about 70% higher transformation stress than M_(1)–R structural phase transition, the application of the M_(2) phase in the micro-actuators is hindered by the fact that previously, M_(2) phase can only stay stable under tensile stress. In this work, we propose and verify that by synthesizing the VO_(2) nanowires under optimized oxygen-rich conditions, stoichiometry change can be introduced into the nanowires (NWs) which in turn yield a large number free-standing single-crystalline M_(2)-phase NWs stable at room temperature. In addition, we demonstrate that the output stress of the M_(2)-phase NWs is about 65% higher than that of the M_(1)-phase NWs during their transition to R phase, quite close to the theoretical prediction. Our findings open new avenues towards enhancing the performance of VO_(2)-based actuators by using M_(2)–R transition.展开更多
A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique desi...A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50nto in diameter is demonstrated to operate at temperatures up to 70K. The charging energy of the Coulomb island is about 12.5meV.展开更多
We theoretically investigate the single- and few-electron states in deformed HgTe quantum dots （QDs） with an inverted band structure using the full configuration interaction method. For the circular and deformed QD,...We theoretically investigate the single- and few-electron states in deformed HgTe quantum dots （QDs） with an inverted band structure using the full configuration interaction method. For the circular and deformed QD, it is found that the energy of edge states is robust against the shape from the circular QD in various elliptic ones. For the few electron states, electrons will firstly fill the edge states localized at the short axis, then the states localized at the long axis of the QD before filling the bulk states. The filling of the edge states can be controlled by tuning the dot size or the deformation of the geometry of the HgTe QD, respectively.展开更多
In this paper, we investigate the single event transient （SET） occurring in partially depleted silicon-on-insulator （PDSOI） metal-oxide-semiconductor （MOS） devices irradiated by pulsed laser beams. Transient sig...In this paper, we investigate the single event transient （SET） occurring in partially depleted silicon-on-insulator （PDSOI） metal-oxide-semiconductor （MOS） devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-p.m single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and an- alyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test （DUT）. The dependences of SET characteristics on drain-induced barrier lowering （DIBL） and the parasitic bipolar junction transistor （PBJT） are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.展开更多
SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with...SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2×2 thermal-optical switch were successfully designed and fabricated. Based on these, 4×4 and 8×8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.展开更多
Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture （SEGR） and single event burnout （SEB）, which will degrade...Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture （SEGR） and single event burnout （SEB）, which will degrade the running safety and reliability of spacecraft, are the two typical failure modes in power MOSFETs. In this paper, based on recombination mechanism of interface between oxide and silicon, a novel hardened power MOS- FETs structure for SEGR and SEB is proposed. The structure comprises double stagger partial silicon-on-insulator （DSPSOI） layers. Results show that the safety operation area （SOA） of a 130 V N-channel power MOSFET in single event irradiation environment is enhanced by up to 50% when the linear-energy-transfer value of heavy ion is a constant of 98 MeV-cm2/mg in the whole incident track, and the other parameters are almost maintained at the same value. Thus this novel structure can be widely used in designing single event irradiation-hardened power MOSFETs.展开更多
Based on 3 D-TCAD simulations, single-event transient(SET) effects and charge collection mechanisms in fully depleted silicon-on-insulator(FDSOI) transistors are investigated. This work presents a comparison between28...Based on 3 D-TCAD simulations, single-event transient(SET) effects and charge collection mechanisms in fully depleted silicon-on-insulator(FDSOI) transistors are investigated. This work presents a comparison between28-nm technology and 0.2-lm technology to analyze the impact of strike location on SET sensitivity in FDSOI devices. Simulation results show that the most SET-sensitive region in FDSOI transistors is the drain region near the gate. An in-depth analysis shows that the bipolar amplification effect in FDSOI devices is dependent on the strike locations. In addition, when the drain contact is moved toward the drain direction, the most sensitive region drifts toward the drain and collects more charge. This provides theoretical guidance for SET hardening.展开更多
基金supported by the USTC start-up fundthe National Natural Science Foundation of China(Grant Nos.12074358 and 12004363)+2 种基金the Fundamental Research Funds for the Central Universities(Grant Nos.WK3510000008 and WK2030000035)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302802)supported by the U.S.Department of Energy,Office of Science,Office of Basic Energy Sciences under Contract No.DEAC02-76SF00515。
文摘Ruddlesden-Popper iridate Sr_(3)Ir_(2)O_(7)is a spin-orbit coupled Mott insulator.Hole doped Sr_(3)Ir_(2)O_(7)provides an ideal platform to study the exotic quantum phenomena that occur near the metal-insulator transition(MIT)region.Rh substitution of Ir is an effective method to induce hole doping into Sr_(3)Ir_(2)O_(7).However,the highest doping level reported in Sr_(3)(Ir_(1-x)Rh_(x))_(2)O_(7)single crystals was only around 3%,which is far from the MIT region.In this paper,we report the successful growth of single crystals of Sr3(Ir_(1-x)Rh_(x))_(2)O_(7)with a doping level of~9%.The samples have been fully characterized,demonstrating the high quality of the single crystals.Transport measurements have been carried out,confirming the tendency of MIT in these samples.The electronic structure has also been examined by angle-resolved photoemission spectroscopy(ARPES)measurements.Our results establish a platform to investigate the heavily hole doped Sr_(3)Ir_(2)O_(7) compound,which also provide new insights into the MIT with hole doping in this material system.
基金supported by the National Magnetic Confinement Fusion Science Program (Grant No. 2011GB112001)the Program of International S&T Cooperation (Grant No. 2013DFA 51050)+3 种基金the National Natural Science Foundation of China (Grant No. 11104224, 11004162, 51271155)the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110184120029)the Fundamental Research Funds for the Central Universities (Grant No. 2682013ZT16, SWJTU11ZT31, 2682013CX004, SWJTU11BR063)the Science Foundation of Sichuan Province (Grant No. 2011JY0031, 2011JY0130)
文摘Topological insulators are insulating in the bulkbut have metallic surface states. Its unique physicochemicalproperties can find numerous applications in electronics,spintronics, photonics, the energy sciences, and thesignal control of transportation. We report an experimentalapproach to synthesize the high-quality single crystal oftopological insulator Bi2Te3 by using self-flux method. Weobtained the optimal preparation conditions by adjustingthe parameters of heat treatment, and successfully preparedthe single-crystal Bi2Te3 sample. The as-grown sampleshave a surface with bright metallic luster and are soft andfragile. Furthermore, Bi2Te3 has the obvious layer structurefrom SEM results. The data of X-ray diffraction andscanning electron microscope show that Bi2Te3 singlecrystal grows along the c-axis with the order of Te（1）–Bi–Te（2）–Bi–Te（1） and crystallizes in the hexagonal systemwith space group of R/3 m. The q–T curve shows that qdecreases with temperature, showing metallic behaviorover the whole temperature range.
文摘This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.
基金This work was supported by the National Natural Science Foundation of China(Nos.52031011,91860109,51927801,and 51621063)the National Key Research and Development Program of China(Nos.2017YFB0702001 and 2016YFB0700404)+1 种基金111 Project 2.0 of China(No.BP2018008)funding from the Science and Technology Departments of Shaanxi and Xi’an,China(Nos.2016KTZDGY-04-03,2016KTZDGY-04-04,and 201805064ZD15CG48).
文摘Vanadium dioxide (VO_(2)) has emerged as a promising micro-actuator material for its large amplitude and high work density across the transition between the insulating (M_(1) and M_(2)) and metallic (R) phase. Even though M_(2)–R transition offers about 70% higher transformation stress than M_(1)–R structural phase transition, the application of the M_(2) phase in the micro-actuators is hindered by the fact that previously, M_(2) phase can only stay stable under tensile stress. In this work, we propose and verify that by synthesizing the VO_(2) nanowires under optimized oxygen-rich conditions, stoichiometry change can be introduced into the nanowires (NWs) which in turn yield a large number free-standing single-crystalline M_(2)-phase NWs stable at room temperature. In addition, we demonstrate that the output stress of the M_(2)-phase NWs is about 65% higher than that of the M_(1)-phase NWs during their transition to R phase, quite close to the theoretical prediction. Our findings open new avenues towards enhancing the performance of VO_(2)-based actuators by using M_(2)–R transition.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11074280 and 11403084the Instrument Developing Project of Chinese Academy of Sciences under Grant No YZ201152+2 种基金the Fundamental Research Funds for Central Universities under Grant Nos JUSRP51323B and JUDCF12032the Joint Innovation Project of Jiangsu Province under Grant No BY2013015-19the Graduate Student Innovation Program for Universities of Jiangsu Province under Grant No CXLX12_0724
文摘A single electron transistor based on a silicon-on-insulator is successfully fabricated with electron-beam nano- lithography, inductively coupled plasma etching, thermal oxidation and other techniques. The unique design of the pattern inversion is used, and the pattern is transferred to be negative in the electron-beam lithography step. The oxidation process is used to form the silicon oxide tunneling barriers, and to further reduce the effective size of the quantum dot. Combinations of these methods offer advantages of good size controllability and accuracy, high reproducibility, low cost, large-area contacts, allowing batch fabrication of single electron transistors and good integration with a radio-frequency tank circuit. The fabricated single electron transistor with a quantum dot about 50nto in diameter is demonstrated to operate at temperatures up to 70K. The charging energy of the Coulomb island is about 12.5meV.
基金Supported by the National Natural Science Foundation of China under Grant No 11434010the National Basic Research Program of China under Grant No 2011CB922204
文摘We theoretically investigate the single- and few-electron states in deformed HgTe quantum dots （QDs） with an inverted band structure using the full configuration interaction method. For the circular and deformed QD, it is found that the energy of edge states is robust against the shape from the circular QD in various elliptic ones. For the few electron states, electrons will firstly fill the edge states localized at the short axis, then the states localized at the long axis of the QD before filling the bulk states. The filling of the edge states can be controlled by tuning the dot size or the deformation of the geometry of the HgTe QD, respectively.
文摘In this paper, we investigate the single event transient （SET） occurring in partially depleted silicon-on-insulator （PDSOI） metal-oxide-semiconductor （MOS） devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-p.m single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and an- alyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test （DUT）. The dependences of SET characteristics on drain-induced barrier lowering （DIBL） and the parasitic bipolar junction transistor （PBJT） are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.
基金This work was supported by the National“973"Project of China(Grant No,G2000-03-66)the National“863”Project(Grant No.2002AA3 12060)of the Ministry of Science and Technology of Chinathe National Natural Science Foundation of China(Grant Nos.69896260 and 60336010).
文摘SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2×2 thermal-optical switch were successfully designed and fabricated. Based on these, 4×4 and 8×8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.
基金Project supported by the National Natural Science Foundation of China(No.61464002)the Grand Science and Technology Special Project in Guizhou Province of China(No.[2015]6006)the Ministry of Education Open Foundation for Semiconductor Power Device Reliability(No.010201)
文摘Single event irradiation-hardened power MOSFET is the most important device for DC/DC converter in space environment application. Single event gate rupture （SEGR） and single event burnout （SEB）, which will degrade the running safety and reliability of spacecraft, are the two typical failure modes in power MOSFETs. In this paper, based on recombination mechanism of interface between oxide and silicon, a novel hardened power MOS- FETs structure for SEGR and SEB is proposed. The structure comprises double stagger partial silicon-on-insulator （DSPSOI） layers. Results show that the safety operation area （SOA） of a 130 V N-channel power MOSFET in single event irradiation environment is enhanced by up to 50% when the linear-energy-transfer value of heavy ion is a constant of 98 MeV-cm2/mg in the whole incident track, and the other parameters are almost maintained at the same value. Thus this novel structure can be widely used in designing single event irradiation-hardened power MOSFETs.
基金supported by the National Natural Science Foundation of China(Nos.61434007 and 61376109)
文摘Based on 3 D-TCAD simulations, single-event transient(SET) effects and charge collection mechanisms in fully depleted silicon-on-insulator(FDSOI) transistors are investigated. This work presents a comparison between28-nm technology and 0.2-lm technology to analyze the impact of strike location on SET sensitivity in FDSOI devices. Simulation results show that the most SET-sensitive region in FDSOI transistors is the drain region near the gate. An in-depth analysis shows that the bipolar amplification effect in FDSOI devices is dependent on the strike locations. In addition, when the drain contact is moved toward the drain direction, the most sensitive region drifts toward the drain and collects more charge. This provides theoretical guidance for SET hardening.
