The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping,...The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping, the so-called “low-temperature doping” of semiconductors. This method of doping is based upon the diffusion process which is carried out in stages by gradually increasing temperature ranging from room temperature to the diffusion temperature.展开更多
SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron m...SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is proposed.The present work provides an efficient strategy for the production of high-quality SiC nano wires.展开更多
文摘The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping, the so-called “low-temperature doping” of semiconductors. This method of doping is based upon the diffusion process which is carried out in stages by gradually increasing temperature ranging from room temperature to the diffusion temperature.
基金financially supported by the National High Technology Research and Development Program (No. 2007AA03Z340)the National Natural Science Foundation of China (Nos. 51202045,51021002, 51172050, 51102063, 51372052 and 50672018)+1 种基金the Fundamental Research Funds for the Central Universities(No. HIT. NSRIF. 2013004)the Key Technology Research and Development Program of Heilongjiang Province (No. GC12C305-3)
文摘SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is proposed.The present work provides an efficient strategy for the production of high-quality SiC nano wires.
