The overall transmitted efficiency at 1550 nm for Nylon-Teflon/Teflon-Nylon （N-T/T-N） grating Silicon- on-insulator （SOI） structure with defect in even and odd position was investigated in this paper. Different ty...The overall transmitted efficiency at 1550 nm for Nylon-Teflon/Teflon-Nylon （N-T/T-N） grating Silicon- on-insulator （SOI） structure with defect in even and odd position was investigated in this paper. Different types of losses, such as absorption, reflection and diffraction, were considered to find out the overall transmitted efficiency. The absorption loss of both Nylon-Teflon （N-T） and Teflon-Nylon （T-N） structure is zero at the wavelength of 1550 nm. Reflectance of these structures was analyzed by using plane wave expansion （PWE） method. Simulation result showed that reflectance as well as transmittance was varied linearly with respect to defect at odd and even positions. Simulation is also done for the diffraction efficiency at 1550nm with respect to detuning from Bragg＇s angle, which was ranged from -0.4 rad to ＋ 0.4 rad. Finally, it was found that overall transmitted efficiency increased as even defect position varied from 2nd to 10th for both N-T/T-N grating SOI structure. Similarly, the overall transmitted efficiency decreased as odd defect position changed from 3rd to l lth for both N-T/T-N grating SOI structure.展开更多
研制了一种基于微机电系统(MEMS)技术的压阻式绝缘体上硅(SOI)高温压力传感器芯片。压力敏感电阻器与衬底之间采用二氧化硅介质隔离,解决了传统的PN结隔离方式在高温条件下的漏电失效问题。研制的高温压力芯片压力量程为0~2 MPa,室温1 ...研制了一种基于微机电系统(MEMS)技术的压阻式绝缘体上硅(SOI)高温压力传感器芯片。压力敏感电阻器与衬底之间采用二氧化硅介质隔离,解决了传统的PN结隔离方式在高温条件下的漏电失效问题。研制的高温压力芯片压力量程为0~2 MPa,室温1 m A条件下满量程输出信号达到100 m V以上,非线性小于0.15%FS,压力迟滞小于0.05%FS。在-55^+150℃温度范围内,零点温度系数小于20μV/℃,灵敏度温度系数小于0.02%FS/℃,零点温度迟滞小于0.1%FS。将芯片样本在150℃环境下进行了短期零点时漂测试验证其稳定性,结果优于0.05%FS。展开更多
文摘The overall transmitted efficiency at 1550 nm for Nylon-Teflon/Teflon-Nylon （N-T/T-N） grating Silicon- on-insulator （SOI） structure with defect in even and odd position was investigated in this paper. Different types of losses, such as absorption, reflection and diffraction, were considered to find out the overall transmitted efficiency. The absorption loss of both Nylon-Teflon （N-T） and Teflon-Nylon （T-N） structure is zero at the wavelength of 1550 nm. Reflectance of these structures was analyzed by using plane wave expansion （PWE） method. Simulation result showed that reflectance as well as transmittance was varied linearly with respect to defect at odd and even positions. Simulation is also done for the diffraction efficiency at 1550nm with respect to detuning from Bragg＇s angle, which was ranged from -0.4 rad to ＋ 0.4 rad. Finally, it was found that overall transmitted efficiency increased as even defect position varied from 2nd to 10th for both N-T/T-N grating SOI structure. Similarly, the overall transmitted efficiency decreased as odd defect position changed from 3rd to l lth for both N-T/T-N grating SOI structure.
文摘研究了高k栅介质对肖特基源漏超薄体SOI MOSFET性能的影响.随着栅介质介电常数增大,肖特基源漏(SBSD)SOI MOSFET的开态电流减小,这表明边缘感应势垒降低效应(FIBL)并不是对势垒产生影响的主要机理.源端附近边缘感应势垒屏蔽效应(FIBS)是SBSD SOI MOSFET开态电流减小的主要原因.同时还发现,源漏与栅是否对准,高k栅介质对器件性能的影响也不相同.如果源漏与栅交叠,高k栅介质与硅衬底之间加入过渡层可以有效地抑制FIBS效应.如果源漏偏离栅,采用高k侧墙并结合堆叠栅结构,可以提高驱动电流.分析结果表明,来自栅极的电力线在介电常数不同的材料界面发生两次折射.根据结构参数的不同可以调节电力线的疏密,从而达到改变势垒高度,调节驱动电流的目的.
文摘研制了一种基于微机电系统(MEMS)技术的压阻式绝缘体上硅(SOI)高温压力传感器芯片。压力敏感电阻器与衬底之间采用二氧化硅介质隔离,解决了传统的PN结隔离方式在高温条件下的漏电失效问题。研制的高温压力芯片压力量程为0~2 MPa,室温1 m A条件下满量程输出信号达到100 m V以上,非线性小于0.15%FS,压力迟滞小于0.05%FS。在-55^+150℃温度范围内,零点温度系数小于20μV/℃,灵敏度温度系数小于0.02%FS/℃,零点温度迟滞小于0.1%FS。将芯片样本在150℃环境下进行了短期零点时漂测试验证其稳定性,结果优于0.05%FS。
