作为硅光子集成芯片中基本无源器件的硅基光波导是进行光信号传输的通道,其具有良好的性能,且与CMOS(Complementary Metal Oxide Semiconductor)工艺相兼容因而得到广泛应用。用于电信和数据中心的硅光子集成电路已逐步走向商业化。近年...作为硅光子集成芯片中基本无源器件的硅基光波导是进行光信号传输的通道,其具有良好的性能,且与CMOS(Complementary Metal Oxide Semiconductor)工艺相兼容因而得到广泛应用。用于电信和数据中心的硅光子集成电路已逐步走向商业化。近年来,中红外波段在自由空间通信、传感以及环境监测等领域的潜在应用受到研究者们的广泛关注。文中分析了中红外硅基光波导的研究现状,归纳了SOI(Silicon on Insulator)、GOSI(Ge-on-SOI)、SOS(Si on Sapphire)、GOS(Ge-on-Si)、SGOS(SiGe-on-Si)、SON(Si-on Si_(3)N_(4))、GON(Ge-on Si_(3)N_(4))等波导材料平台和SOPS(Si on Porous Si)、Undercut、Pedestal、Freestanding、Suspended、LOCOS(Local Oxidation of Silicon)以及等离子体结构等制造工艺平台的研究成果。迄今为止,多数单晶硅在MIR(Mid-Infrared)平台的传播损耗大约在0.7~3.0 dB·cm^(-1)。文中讨论并对比了不同类型波导的应用前景,为中红外硅基光波导的研发、应用和商业化提供了参考。展开更多
The propagation characteristic of two identical and parallel dark solitons in a silicon-on-insulator(SOI)waveguide is simulated numerically using the split-step Fourier method.The parallel dark solitons imposed by the...The propagation characteristic of two identical and parallel dark solitons in a silicon-on-insulator(SOI)waveguide is simulated numerically using the split-step Fourier method.The parallel dark solitons imposed by the initial chirp are investigated mainly by changing their power,their relative time delay.The simulation shows that the time delay deforms the parallel dark soliton pulse,forming a bright-like soliton in the transmission process and making the transmission quality down.By increasing the power of one dark soliton,the energy of the other dark soliton can be increased,and larger increase in a soliton’s power leads to larger increase in the energy of the other.When the initial chirp is introduced into one of the dark solitons,higher energy consumption is observed.In particular,positive chirps resulting in pulse broadening width while negative chirps narrowing,with an obvious compression effect on the other dark soliton.Finally,large negative chirps are found to have a profound impact on parallel and nonparallel dark solitons.展开更多
文摘作为硅光子集成芯片中基本无源器件的硅基光波导是进行光信号传输的通道,其具有良好的性能,且与CMOS(Complementary Metal Oxide Semiconductor)工艺相兼容因而得到广泛应用。用于电信和数据中心的硅光子集成电路已逐步走向商业化。近年来,中红外波段在自由空间通信、传感以及环境监测等领域的潜在应用受到研究者们的广泛关注。文中分析了中红外硅基光波导的研究现状,归纳了SOI(Silicon on Insulator)、GOSI(Ge-on-SOI)、SOS(Si on Sapphire)、GOS(Ge-on-Si)、SGOS(SiGe-on-Si)、SON(Si-on Si_(3)N_(4))、GON(Ge-on Si_(3)N_(4))等波导材料平台和SOPS(Si on Porous Si)、Undercut、Pedestal、Freestanding、Suspended、LOCOS(Local Oxidation of Silicon)以及等离子体结构等制造工艺平台的研究成果。迄今为止,多数单晶硅在MIR(Mid-Infrared)平台的传播损耗大约在0.7~3.0 dB·cm^(-1)。文中讨论并对比了不同类型波导的应用前景,为中红外硅基光波导的研发、应用和商业化提供了参考。
基金Project supported by the National Natural Science Foundation of China(Grant No.61741509)
文摘The propagation characteristic of two identical and parallel dark solitons in a silicon-on-insulator(SOI)waveguide is simulated numerically using the split-step Fourier method.The parallel dark solitons imposed by the initial chirp are investigated mainly by changing their power,their relative time delay.The simulation shows that the time delay deforms the parallel dark soliton pulse,forming a bright-like soliton in the transmission process and making the transmission quality down.By increasing the power of one dark soliton,the energy of the other dark soliton can be increased,and larger increase in a soliton’s power leads to larger increase in the energy of the other.When the initial chirp is introduced into one of the dark solitons,higher energy consumption is observed.In particular,positive chirps resulting in pulse broadening width while negative chirps narrowing,with an obvious compression effect on the other dark soliton.Finally,large negative chirps are found to have a profound impact on parallel and nonparallel dark solitons.
