Purpose In the upgrade study of the BESII inner drift chamber,a two-layer concentric cylindrical silicon pixel detector is proposed,which will be positioned between the beam pipe and the inner drift chamber.Method The...Purpose In the upgrade study of the BESII inner drift chamber,a two-layer concentric cylindrical silicon pixel detector is proposed,which will be positioned between the beam pipe and the inner drift chamber.Method The detector consists of CMOS pixel sensors at wafer scale using chip stitching technology.The chips are thinned to a flexible thickness of about 50μm.PMI foams are used as spacers and auxiliary support between the adjacent layers,enabling the first layer of the detector to be put as close to the central beam pipe as possible.The detector structure has been optimized through finite-element analysis(FEA).Result The material budget of the detector has been reduced to about 0.077%Xo per layer.The maximum deformation of the chip edge has been controlled to±80μm after bending,and the roundness is about 100μm,which verifies the feasibility of the cylindrical detector prototype structure.In addition,the wire bonding process for the cylindrical silicon pixel detector has been tested and preliminarily validated.Conclusion This study validates the process flow for the development of large-area cylindrical detectors based on stitching technology,laying a foundation for the smooth progress of subsequent study.展开更多
Identifying sensitive areas in integrated circuits susceptible to single-event effects(SEE)is crucial for improving radiation hardness.This study presents an online multi-track location(OML)framework to enhance the hi...Identifying sensitive areas in integrated circuits susceptible to single-event effects(SEE)is crucial for improving radiation hardness.This study presents an online multi-track location(OML)framework to enhance the high-resolution online trajectory detection for the Hi’Beam-SEE system,which aims to localize SEE-sensitive positions on the IC at the micrometer scale and in real time.We employed a reparameterization method to accelerate the inference speed,merging the branches of the backbone of the location in the deployment scenario.Additionally,we designed an irregular convolution kernel,an attention mechanism,and a fused loss function to improve the positioning accuracy.OML demonstrates exceptional realtime processing capabilities,achieving a positioning accuracy of 1.83μm in processing data generated by the Hi’Beam-SEE system at 163 frames per second per GPU.展开更多
A silicon pixel detector with fine pitch size of 19 μm × 19 μm, developed based on SOI （silicon-on- insulator） technology, was tested under the illumination of infrared laser pulses. As an alternative method ...A silicon pixel detector with fine pitch size of 19 μm × 19 μm, developed based on SOI （silicon-on- insulator） technology, was tested under the illumination of infrared laser pulses. As an alternative method for particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to sinmlate the tracks of MIPs （minimum ionization particles） in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, the signal amplitude as a function of the applied bias voltage was measured for this SOI detector, deepening understanding of its depletion characteristics.展开更多
针对应用于同步辐射的硅像素探测器,设计了一种基于电流模式的像素型前端读出单元电路,像素单元电路主要包括电荷灵敏前置放大器、跨导放大器、电流甄别器、阈值调节电路和计数器等,实现了信号放大、电压转为电流、信号甄别以及计数等...针对应用于同步辐射的硅像素探测器,设计了一种基于电流模式的像素型前端读出单元电路,像素单元电路主要包括电荷灵敏前置放大器、跨导放大器、电流甄别器、阈值调节电路和计数器等,实现了信号放大、电压转为电流、信号甄别以及计数等功能。芯片基于SMIC 0.13μm/1.2V CMOS工艺设计,像素单元面积为100μm×100μm,仿真结果表明:像素单元静态功耗为50μW,等效噪声电荷低于100e-,不一致性小于100e-,能量甄别范围为8 ke V^20 ke V,达到了预期设计目标。与电压模式的像素单元电路相比,具有结构简单、功耗低、芯片面积小以及抗干扰能力强的特点。展开更多
基金supported by the National Natural Science Foundation of China(No.U2032203).
文摘Purpose In the upgrade study of the BESII inner drift chamber,a two-layer concentric cylindrical silicon pixel detector is proposed,which will be positioned between the beam pipe and the inner drift chamber.Method The detector consists of CMOS pixel sensors at wafer scale using chip stitching technology.The chips are thinned to a flexible thickness of about 50μm.PMI foams are used as spacers and auxiliary support between the adjacent layers,enabling the first layer of the detector to be put as close to the central beam pipe as possible.The detector structure has been optimized through finite-element analysis(FEA).Result The material budget of the detector has been reduced to about 0.077%Xo per layer.The maximum deformation of the chip edge has been controlled to±80μm after bending,and the roundness is about 100μm,which verifies the feasibility of the cylindrical detector prototype structure.In addition,the wire bonding process for the cylindrical silicon pixel detector has been tested and preliminarily validated.Conclusion This study validates the process flow for the development of large-area cylindrical detectors based on stitching technology,laying a foundation for the smooth progress of subsequent study.
基金supported by the National Natural Science Foundation of China(Nos.U2032209,12222512,12375193,12305210)the National Key Research and Development Program of China(No.2021YFA1601300)the CAS“Light of West China”Program,the CAS Pioneer Hundred Talent Program,the Guangdong Major Project of Basic and Applied Basic Research(No.2020B0301030008).
文摘Identifying sensitive areas in integrated circuits susceptible to single-event effects(SEE)is crucial for improving radiation hardness.This study presents an online multi-track location(OML)framework to enhance the high-resolution online trajectory detection for the Hi’Beam-SEE system,which aims to localize SEE-sensitive positions on the IC at the micrometer scale and in real time.We employed a reparameterization method to accelerate the inference speed,merging the branches of the backbone of the location in the deployment scenario.Additionally,we designed an irregular convolution kernel,an attention mechanism,and a fused loss function to improve the positioning accuracy.OML demonstrates exceptional realtime processing capabilities,achieving a positioning accuracy of 1.83μm in processing data generated by the Hi’Beam-SEE system at 163 frames per second per GPU.
基金Supported by National Natural Science Foundation of China(11375226)
文摘A silicon pixel detector with fine pitch size of 19 μm × 19 μm, developed based on SOI （silicon-on- insulator） technology, was tested under the illumination of infrared laser pulses. As an alternative method for particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to sinmlate the tracks of MIPs （minimum ionization particles） in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, the signal amplitude as a function of the applied bias voltage was measured for this SOI detector, deepening understanding of its depletion characteristics.
文摘针对应用于同步辐射的硅像素探测器,设计了一种基于电流模式的像素型前端读出单元电路,像素单元电路主要包括电荷灵敏前置放大器、跨导放大器、电流甄别器、阈值调节电路和计数器等,实现了信号放大、电压转为电流、信号甄别以及计数等功能。芯片基于SMIC 0.13μm/1.2V CMOS工艺设计,像素单元面积为100μm×100μm,仿真结果表明:像素单元静态功耗为50μW,等效噪声电荷低于100e-,不一致性小于100e-,能量甄别范围为8 ke V^20 ke V,达到了预期设计目标。与电压模式的像素单元电路相比,具有结构简单、功耗低、芯片面积小以及抗干扰能力强的特点。
