In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI (SGOI)material, an ideal substrate for realizing strained-silicon structures, has been investigated by modified SIMOX tech...In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI (SGOI)material, an ideal substrate for realizing strained-silicon structures, has been investigated by modified SIMOX technology.From 2002, the 100 mm, 125 mm and 150 mm SIMOX wafers have been successfully produced by ShanghaiSimgui Technology Co. Ltd, a commercial spin-off of Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences (CAS), and shipped to the semiconductor industry worldwide. This paperpresents an outlook for R & D on SOI technologies, and the recent status and future prospect of SIMOX wafers inChina.展开更多
为了提高基于绝缘体上的硅(SOI)技术实现的横向扩散金属氧化物半导体器件(SOI LDMOS)的击穿电压,提出了斜埋氧SOI LDMOS(S SOI LDMOS)耐压新结构。当器件关断时,倾斜的埋氧层束缚了大量的空穴,在埋氧层上界面引入了高密度的正电荷,大大...为了提高基于绝缘体上的硅(SOI)技术实现的横向扩散金属氧化物半导体器件(SOI LDMOS)的击穿电压,提出了斜埋氧SOI LDMOS(S SOI LDMOS)耐压新结构。当器件关断时,倾斜的埋氧层束缚了大量的空穴,在埋氧层上界面引入了高密度的正电荷,大大增强了埋氧层中的电场,从而提高了纵向耐压。另外,埋氧层的倾斜使器件漂移区厚度从源到漏线性增加,这就等效于漂移区采用了线性变掺杂,通过优化埋氧层倾斜度,可获得一个理想的表面电场分布,提高了器件的横向耐压。对器件耐压机理进行了理论分析与数值仿真,结果表明新结构在埋氧层厚度为1μm、漂移区长度为40μm时,即可获得600 V以上的击穿电压,其耐压比常规结构提高了3倍多。展开更多
以0.2μm SOI RF工艺平台为基础,对射频开关测试结构基本特性参数进行分析研究。研究内容包括:a)栅极和衬底通过反向二极管连接;b)浮体器件;c)衬底通过大电阻接地(HR GND);d)衬底通过大电阻连接到栅极控制端(HR,Vsub=Vg)等四种结构。比...以0.2μm SOI RF工艺平台为基础,对射频开关测试结构基本特性参数进行分析研究。研究内容包括:a)栅极和衬底通过反向二极管连接;b)浮体器件;c)衬底通过大电阻接地(HR GND);d)衬底通过大电阻连接到栅极控制端(HR,Vsub=Vg)等四种结构。比较分析了其插入损耗、隔离度及谐波特性,并阐明产生差异的机制。研究结果可以为射频开关器件结构和电路设计做参考。展开更多
文摘In recent years, novel structure SOI materials have been fabricated successfully. Also, SiGeOI (SGOI)material, an ideal substrate for realizing strained-silicon structures, has been investigated by modified SIMOX technology.From 2002, the 100 mm, 125 mm and 150 mm SIMOX wafers have been successfully produced by ShanghaiSimgui Technology Co. Ltd, a commercial spin-off of Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences (CAS), and shipped to the semiconductor industry worldwide. This paperpresents an outlook for R & D on SOI technologies, and the recent status and future prospect of SIMOX wafers inChina.
文摘以0.2μm SOI RF工艺平台为基础,对射频开关测试结构基本特性参数进行分析研究。研究内容包括:a)栅极和衬底通过反向二极管连接;b)浮体器件;c)衬底通过大电阻接地(HR GND);d)衬底通过大电阻连接到栅极控制端(HR,Vsub=Vg)等四种结构。比较分析了其插入损耗、隔离度及谐波特性,并阐明产生差异的机制。研究结果可以为射频开关器件结构和电路设计做参考。
