Si-based nanomaterials are some new photo-elctronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e.g. Si light emitting diode, Si l...Si-based nanomaterials are some new photo-elctronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e.g. Si light emitting diode, Si laser and integrated Si-based photoelectronics. Among them are nano-scale porous silicon (ps), Si nanocrystalline embedded SiO2 (SiOx, x 【 2.0) matrices, Si nanoquantum dot and Si/SiO2 superlattice, etc. At present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (PL) and electroluminescence (EL), it is possible for them to lead to a new informational revolution in the early days of the 21st century. In this article, we will mainly review the progress of study on Si-based nanomaterials in the past ten years. The involved contents are the fabricated methods, structural characterizations and light emitting properties. Finally, we predicate the developed tendency of this field in the following ten years.展开更多
Although silicon（Si） is ubiquitous in soil and plant, evidence is still lacking that Si is essential for higher plants. However, it has been well documented that Si is beneficial for healthy growth of many plant spe...Although silicon（Si） is ubiquitous in soil and plant, evidence is still lacking that Si is essential for higher plants. However, it has been well documented that Si is beneficial for healthy growth of many plant species. Si can promote plant mechanical strength, light interception, as well as resistance to various forms of abiotic and biotic stress, thus improving both yield and quality. Indeed, application of Si fertilizer is a rather common agricultural practice in many countries and regions. As the beneficial effects provided by Si are closely correlated with Si accumulation level in plant, elucidating the possible mechanisms of Si uptake and transport in plants is extremely important to utilize the Si-induced beneficial effects in plants. Recently, rapid progress has been made in unveiling molecular mechanisms of Si uptake and transport in plants. Based on the cooperation of Si influx channels and efflux transporters, a model to decipher Si uptake, transport and distribution system in higher plants has been developed, which involves uptake and radial transport in root, xylem and inter-vascular transport and xylem unloading and deposition in leaf. In this paper, we overviewed the updated knowledge concerning Si uptake, transport and accumulation and its significance for the major crops of agricultural importance and highlighted the further research needs as well.展开更多
Green energy storage devices play vital roles in reducing fossil fuel emissions and achieving carbon neutrality by 2050.Growing markets for portable electronics and electric vehicles create tremendous demand for advan...Green energy storage devices play vital roles in reducing fossil fuel emissions and achieving carbon neutrality by 2050.Growing markets for portable electronics and electric vehicles create tremendous demand for advanced lithium-ion batteries(LIBs)with high power and energy density,and novel electrode material with high capacity and energy density is one of the keys to next-generation LIBs.Silicon-based materials,with high specific capacity,abundant natural resources,high-level safety and environmental friendliness,are quite promising alternative anode materials.However,significant volume expansion and redundant side reactions with electrolytes lead to active lithium loss and decreased coulombic efficiency(CE)of silicon-based material,which hinders the commercial application of silicon-based anode.Prelithiation,preembedding extra lithium ions in the electrodes,is a promising approach to replenish the lithium loss during cycling.Recent progress on prelithiation strategies for silicon-based anode,including electrochemical method,chemical method,direct contact method,and active material method,and their practical potentials are reviewed and prospected here.The development of advanced Si-based material and prelithiation technologies is expected to provide promising approaches for the large-scale application of silicon-based materials.展开更多
Silicon(Si)-based solid-state batteries(Si-SSBs)are attracting tremendous attention because of their high energy density and unprecedented safety,making them become promising candidates for next-generation energy stor...Silicon(Si)-based solid-state batteries(Si-SSBs)are attracting tremendous attention because of their high energy density and unprecedented safety,making them become promising candidates for next-generation energy storage systems.Nevertheless,the commercialization of Si-SSBs is significantly impeded by enormous challenges including large volume variation,severe interfacial problems,elusive fundamental mechanisms,and unsatisfied electrochemical performance.Besides,some unknown electrochemical processes in Si-based anode,solid-state electrolytes(SSEs),and Si-based anode/SSE interfaces are still needed to be explored,while an in-depth understanding of solid–solid interfacial chemistry is insufficient in Si-SSBs.This review aims to summarize the current scientific and technological advances and insights into tackling challenges to promote the deployment of Si-SSBs.First,the differences between various conventional liquid electrolyte-dominated Si-based lithium-ion batteries(LIBs)with Si-SSBs are discussed.Subsequently,the interfacial mechanical contact model,chemical reaction properties,and charge transfer kinetics(mechanical–chemical kinetics)between Si-based anode and three different SSEs(inorganic(oxides)SSEs,organic–inorganic composite SSEs,and inorganic(sulfides)SSEs)are systemically reviewed,respectively.Moreover,the progress for promising inorganic(sulfides)SSE-based Si-SSBs on the aspects of electrode constitution,three-dimensional structured electrodes,and external stack pressure is highlighted,respectively.Finally,future research directions and prospects in the development of Si-SSBs are proposed.展开更多
Silicon monoxide(SiO)(silicon[Si]mixed with silicon dioxide[SiO_(2)])/graphite(Gr)composite material is one of the most commercially promising anode materials for the next generation of high-energy-density lithium-ion...Silicon monoxide(SiO)(silicon[Si]mixed with silicon dioxide[SiO_(2)])/graphite(Gr)composite material is one of the most commercially promising anode materials for the next generation of high-energy-density lithium-ion batteries.The major bottleneck for SiO/Gr composite anode is the poor cyclability arising from the stress/strain behaviors due to the mismatch between two heterogenous materials during the lithiation/delithiation process.To date,a meticulous and quantitative understanding of the highly nonlinear coupling behaviors of such materials is still lacking.Herein,an electro–chemo–mechanics-coupled detailed model containing particle geometries is established.The underlying mechanism of the regulation between SiO and Gr components during electrochemical cycling is quantitatively revealed.We discover that increasing the SiO weight percentage(wt%)reduces the utilization efficiency of the active materials at the same 1C rate charging and enhances the hindering effects of stress-driven flux on diffusion.In addition,the mechanical constraint demonstrates a balanced effect on the overall performance of cells and the local behaviors of particles.This study provides new insights into the fundamental interactions between SiO and Gr materials and advances the investigation methodology for the design and evaluation of next-generation high-energydensity batteries.展开更多
High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition （UHV/CVD）. This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 μm Ge, with responsivitie...High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition （UHV/CVD）. This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 μm Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 μm, respectively. The dark current density is 0.37 mA/cm^2 and 29.4 mA/cm^2 at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30μm, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.展开更多
A dual-shell Si/TiO2/CFs composite was synthesized through a simple method to deal with the intrinsic drawbacks of silicon-based anode,in terms of huge volume change,unstable SEI films,and low electronic and ionic con...A dual-shell Si/TiO2/CFs composite was synthesized through a simple method to deal with the intrinsic drawbacks of silicon-based anode,in terms of huge volume change,unstable SEI films,and low electronic and ionic conductivity.The inner rigid TiO2 shell alleviates the huge volume expansion of the nano silicon,and the outer resilient carbon fiber,which is porous and staggered,is beneficial to the rapid transport of electrons and ions.The as-prepared Si/TiO2/CFs composite displays a superior reversible specific capacity of 583.4 mA·h/g,high rate capability and decent cycling performance.The dual-shell encapsulation method provides a guideline for other anode materials with huge volume expansion during the cycling process.展开更多
Micro-optical electromechanical systems(MOEMS)combine the merits of micro-electromechanical systems(MEMS)and micro-optics to enable unique optical functions for a wide range of advanced applications.Using simple exter...Micro-optical electromechanical systems(MOEMS)combine the merits of micro-electromechanical systems(MEMS)and micro-optics to enable unique optical functions for a wide range of advanced applications.Using simple external electromechanical control methods,such as electrostatic,magnetic or thermal effects,Si-based MOEMS can achieve precise dynamic optical modulation.In this paper,we will briefly review the technologies and applications of Si-based MOEMS.Their basic working principles,advantages,general materials and micromachining fabrication technologies are introduced concisely,followed by research progress of advanced Si-based MOEMS devices,including micromirrors/micromirror arrays,micro-spectrometers,and optical/photonic switches.Owing to the unique advantages of Si-based MOEMS in spatial light modulation and high-speed signal processing,they have several promising applications in optical communications,digital light processing,and optical sensing.Finally,future research and development prospects of Si-based MOEMS are discussed.展开更多
Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology...Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as： （1） the nature of indirect band gap of Ge; （2） the epitaxy of dislocation-free Ge layers on Si substrate; and （3） the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on- insulator （GOI） materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n＋p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits.展开更多
文摘Si-based nanomaterials are some new photo-elctronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e.g. Si light emitting diode, Si laser and integrated Si-based photoelectronics. Among them are nano-scale porous silicon (ps), Si nanocrystalline embedded SiO2 (SiOx, x 【 2.0) matrices, Si nanoquantum dot and Si/SiO2 superlattice, etc. At present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (PL) and electroluminescence (EL), it is possible for them to lead to a new informational revolution in the early days of the 21st century. In this article, we will mainly review the progress of study on Si-based nanomaterials in the past ten years. The involved contents are the fabricated methods, structural characterizations and light emitting properties. Finally, we predicate the developed tendency of this field in the following ten years.
基金supported by the National Natural Science Foundation of China (31572191 and 31772387)the Serbian Ministry of Education, Science and Technological Development (173028)
文摘Although silicon（Si） is ubiquitous in soil and plant, evidence is still lacking that Si is essential for higher plants. However, it has been well documented that Si is beneficial for healthy growth of many plant species. Si can promote plant mechanical strength, light interception, as well as resistance to various forms of abiotic and biotic stress, thus improving both yield and quality. Indeed, application of Si fertilizer is a rather common agricultural practice in many countries and regions. As the beneficial effects provided by Si are closely correlated with Si accumulation level in plant, elucidating the possible mechanisms of Si uptake and transport in plants is extremely important to utilize the Si-induced beneficial effects in plants. Recently, rapid progress has been made in unveiling molecular mechanisms of Si uptake and transport in plants. Based on the cooperation of Si influx channels and efflux transporters, a model to decipher Si uptake, transport and distribution system in higher plants has been developed, which involves uptake and radial transport in root, xylem and inter-vascular transport and xylem unloading and deposition in leaf. In this paper, we overviewed the updated knowledge concerning Si uptake, transport and accumulation and its significance for the major crops of agricultural importance and highlighted the further research needs as well.
基金This work was supported by Guangdong Basic and Applied Basic Research Foundation(2019A1515110530,2022A1515010486)Shenzhen Science and Technology Program(JCYJ20210324140804013)Tsinghua Shenzhen International Graduate School(QD2021005N,JC2021007).
文摘Green energy storage devices play vital roles in reducing fossil fuel emissions and achieving carbon neutrality by 2050.Growing markets for portable electronics and electric vehicles create tremendous demand for advanced lithium-ion batteries(LIBs)with high power and energy density,and novel electrode material with high capacity and energy density is one of the keys to next-generation LIBs.Silicon-based materials,with high specific capacity,abundant natural resources,high-level safety and environmental friendliness,are quite promising alternative anode materials.However,significant volume expansion and redundant side reactions with electrolytes lead to active lithium loss and decreased coulombic efficiency(CE)of silicon-based material,which hinders the commercial application of silicon-based anode.Prelithiation,preembedding extra lithium ions in the electrodes,is a promising approach to replenish the lithium loss during cycling.Recent progress on prelithiation strategies for silicon-based anode,including electrochemical method,chemical method,direct contact method,and active material method,and their practical potentials are reviewed and prospected here.The development of advanced Si-based material and prelithiation technologies is expected to provide promising approaches for the large-scale application of silicon-based materials.
基金supported by the National Natural Science Foundation of China(Grants Nos.52072323,52122211 and 21875155)the State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(Grant No.LAPS22005)+3 种基金the Frontier Exploration Projects of Longmen Laboratory(Grant No.LMQYTSKT008)the Shenzhen Technical Plan Project(No.JCYJ20220818101003008)the support of High-Tech Industrialization Project of Tan Kah Kee Innovation Laboratory(Grant No.RD2021010101)the“Double-First Class”Foundation of Materials and Intelligent Manufacturing Discipline of Xiamen University.L.Zhang and Q.Zhang acknowledge the support of the Nanqiang Young Top-notch Talent Fellowship at Xiamen University.
文摘Silicon(Si)-based solid-state batteries(Si-SSBs)are attracting tremendous attention because of their high energy density and unprecedented safety,making them become promising candidates for next-generation energy storage systems.Nevertheless,the commercialization of Si-SSBs is significantly impeded by enormous challenges including large volume variation,severe interfacial problems,elusive fundamental mechanisms,and unsatisfied electrochemical performance.Besides,some unknown electrochemical processes in Si-based anode,solid-state electrolytes(SSEs),and Si-based anode/SSE interfaces are still needed to be explored,while an in-depth understanding of solid–solid interfacial chemistry is insufficient in Si-SSBs.This review aims to summarize the current scientific and technological advances and insights into tackling challenges to promote the deployment of Si-SSBs.First,the differences between various conventional liquid electrolyte-dominated Si-based lithium-ion batteries(LIBs)with Si-SSBs are discussed.Subsequently,the interfacial mechanical contact model,chemical reaction properties,and charge transfer kinetics(mechanical–chemical kinetics)between Si-based anode and three different SSEs(inorganic(oxides)SSEs,organic–inorganic composite SSEs,and inorganic(sulfides)SSEs)are systemically reviewed,respectively.Moreover,the progress for promising inorganic(sulfides)SSE-based Si-SSBs on the aspects of electrode constitution,three-dimensional structured electrodes,and external stack pressure is highlighted,respectively.Finally,future research directions and prospects in the development of Si-SSBs are proposed.
文摘Silicon monoxide(SiO)(silicon[Si]mixed with silicon dioxide[SiO_(2)])/graphite(Gr)composite material is one of the most commercially promising anode materials for the next generation of high-energy-density lithium-ion batteries.The major bottleneck for SiO/Gr composite anode is the poor cyclability arising from the stress/strain behaviors due to the mismatch between two heterogenous materials during the lithiation/delithiation process.To date,a meticulous and quantitative understanding of the highly nonlinear coupling behaviors of such materials is still lacking.Herein,an electro–chemo–mechanics-coupled detailed model containing particle geometries is established.The underlying mechanism of the regulation between SiO and Gr components during electrochemical cycling is quantitatively revealed.We discover that increasing the SiO weight percentage(wt%)reduces the utilization efficiency of the active materials at the same 1C rate charging and enhances the hindering effects of stress-driven flux on diffusion.In addition,the mechanical constraint demonstrates a balanced effect on the overall performance of cells and the local behaviors of particles.This study provides new insights into the fundamental interactions between SiO and Gr materials and advances the investigation methodology for the design and evaluation of next-generation high-energydensity batteries.
基金Project supported by the National High-Technology Research and Development Program of China (Grant No 2006AA03Z415)the Major State Basic Program of China (Grant No 2007CB613404)the National Natural Science Foundation of China(Grant No 60676005)
文摘High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition （UHV/CVD）. This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 μm Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 μm, respectively. The dark current density is 0.37 mA/cm^2 and 29.4 mA/cm^2 at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30μm, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.
基金Project(51772331)supported by the National Natural Science Foundation of ChinaProject(2018YFB1106000)supported by the National Key Technologies R&D Program of China
文摘A dual-shell Si/TiO2/CFs composite was synthesized through a simple method to deal with the intrinsic drawbacks of silicon-based anode,in terms of huge volume change,unstable SEI films,and low electronic and ionic conductivity.The inner rigid TiO2 shell alleviates the huge volume expansion of the nano silicon,and the outer resilient carbon fiber,which is porous and staggered,is beneficial to the rapid transport of electrons and ions.The as-prepared Si/TiO2/CFs composite displays a superior reversible specific capacity of 583.4 mA·h/g,high rate capability and decent cycling performance.The dual-shell encapsulation method provides a guideline for other anode materials with huge volume expansion during the cycling process.
基金supported by the National Natural Science Foundation of China under Grant No.61975016the Science and Technology Project of Guangdong(2020B010190001)+2 种基金Natural Science Foundation of Beijing Municipality(1212013 and Z190006)Beijing Municipal Science&Technology Commission,Administrative Commission of Zhongguancun Science Park No.Z211100004821009Cultivation Project for Basic Research and Innovation of Yanshan University No.2021LGQN021.
文摘Micro-optical electromechanical systems(MOEMS)combine the merits of micro-electromechanical systems(MEMS)and micro-optics to enable unique optical functions for a wide range of advanced applications.Using simple external electromechanical control methods,such as electrostatic,magnetic or thermal effects,Si-based MOEMS can achieve precise dynamic optical modulation.In this paper,we will briefly review the technologies and applications of Si-based MOEMS.Their basic working principles,advantages,general materials and micromachining fabrication technologies are introduced concisely,followed by research progress of advanced Si-based MOEMS devices,including micromirrors/micromirror arrays,micro-spectrometers,and optical/photonic switches.Owing to the unique advantages of Si-based MOEMS in spatial light modulation and high-speed signal processing,they have several promising applications in optical communications,digital light processing,and optical sensing.Finally,future research and development prospects of Si-based MOEMS are discussed.
基金supported in part by the National Natural Science Foundation(Nos.61036003,61435013)the Major State Basic Research Development Program of China(No.2013CB632103)
文摘Si-based germanium is considered to be a promising platform for the integration of electronic and pho- tonic devices due to its high carrier mobility, good optical properties, and compatibility with Si CMOS technology. However, some great challenges have to be confronted, such as： （1） the nature of indirect band gap of Ge; （2） the epitaxy of dislocation-free Ge layers on Si substrate; and （3） the immature technology for Ge devices. The aim of this paper is to give a review of the recent progress made in the field of epitaxy and optical properties of Ge heterostructures on Si substrate, as well as some key technologies on Ge devices. High crystal quality Ge epilayers, as well as Ge/SiGe multiple quantum wells with high Ge content, were successfully grown on Si substrate with a low-temperature Ge buffer layer. A local Ge condensation technique was proposed to prepare germanium-on- insulator （GOI） materials with high tensile strain for enhanced Ge direct band photoluminescence. The advances in formation of Ge n＋p shallow junctions and the modulation of Schottky barrier height of metal/Ge contacts were a significant progress in Ge technology. Finally, the progress of Si-based Ge light emitters, photodetectors, and MOSFETs was briefly introduced. These results show that Si-based Ge heterostructure materials are promising for use in the next-generation of integrated circuits and optoelectronic circuits.
