Overcoming the sub-5 nm gate length limit and decreasing the power dissipation are two main objects in the electronics research field. Besides advanced engineering techniques, considering new material systems may be h...Overcoming the sub-5 nm gate length limit and decreasing the power dissipation are two main objects in the electronics research field. Besides advanced engineering techniques, considering new material systems may be helpful. Here, we demonstrate two-dimensional(2D) subthermionic field-effect transistors(FETs) with sub-5 nm gate lengths based on ferroelectric(FE) van der Waals heterostructures(vdWHs).The FE vd WHs are composed of graphene, MoS2, and CuInP2S6 acting as 2D contacts, channels, and ferroelectric dielectric layers, respectively. We first show that the as-fabricated long-channel device exhibits nearly hysteresis-free subthermionic switching over three orders of magnitude of drain current at room temperature. Further, we fabricate short-channel subthermionic FETs using metallic carbon nanotubes as effective gate terminals. A typical device shows subthermionic switching over five-to-six orders of magnitude of drain current with a minimum subthreshold swing of 6.1 mV/dec at room temperature. Our results indicate that 2D materials system is promising for advanced highly-integrated energy-efficient electronic devices.展开更多
AIM To investigate the pharmacological effect of Tong XieYao Fang(TXYF) formula, a Chinese herbal formula, on Diarrhea-predominant irritable bowel syndrome(D-IBS) rats.METHODS In a neonatal maternal separation plus re...AIM To investigate the pharmacological effect of Tong XieYao Fang(TXYF) formula, a Chinese herbal formula, on Diarrhea-predominant irritable bowel syndrome(D-IBS) rats.METHODS In a neonatal maternal separation plus restraint stress(NMS + RS) model of D-IBS, male Sprague Dawley rats were randomly divided into two groups(NMS + RS group and TXYF-formula group) with no handlings were used as controls(NH group). Starting from postnatalday 60, rats in TXYF-formula group were administered TXYF-formula(4.92 g/100 g bodyweight) orally twice a day for 14 consecutive days while NH group and NMS + RS group were given distilled water. Using short-circuit current technology, we observed 5-HT-induced changes of current across ion channels, such as cystic fibrosis transmembrane conductance regulator(CFTR) Clchannel, epithelial Na+ channel(ENaC), Ca2+-dependent Cl- channel(CACC), Na+-K+-2Cl- co-transporter(NKCC), and Na+-HCO-3 co-transporter(NBC), in the colonic epithelium of three groups after exposure to drugs and specific blockers with a Power Lab System(AD Instruments International).RESULTS Under basal conditions, the changes of short-circuit current(?Isc, μA/cm2) induced by 5-HT were similar in NH group and TXYF-formula group, and both higher than NMS + RS group(70.86 μA/cm2 ± 12.32 μA/cm2, 67.67 μA/cm2 ± 11.68 μA/cm2 vs 38.8 μA/cm2 ± 7.25 μA/cm2, P < 0.01, respectively). When CACC was blocked by 4,4′-diisothiocyanato-stilbene-2,2′-disulfonic acid, 5-HT-induced ?Isc was smaller in NMS + RS group than in NH group and TXYF-formula group, respectively(48.41 μA/cm2 ± 13.15 μA/cm2 vs 74.62 μA/cm2 ± 10.73 μA/cm2, 69.22 μA/cm2 ± 11.7 μA/cm2, P < 0.05, respectively). The similar result could be obtained when ENaC was blocked by Amiloride(44.69 μA/cm2 ± 12.58 μA/cm2 vs 62.05 μA/cm2 ± 11.26 μA/cm2, 62.11 μA/cm2 ± 12.01 μA/cm2, P < 0.05, respectively). However, when CFTR Cl- channel was blocked by 1,1-dimethyl piperidinium chloride(DPC), 5-HT-induced ?Isc did not significantly differ in three groups(42.2展开更多
We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to ru...We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation （10000 randomizations）. With this simulation, we could study the effects of varying the dimensions （length and width）, and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region （off） and overthreshold （on）. It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion （compared with that of the subthreshold）. These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.展开更多
绝缘体上硅(Silicon on insulator,SOI)技术在200~400℃高温器件和集成电路方面有着广泛的应用前景,但对于沟道长度≤0.18μm的短沟道器件在200℃以上的高温下阈值电压漂移量达40%以上,漏电流达μA级,无法满足电路设计要求。本文研究了...绝缘体上硅(Silicon on insulator,SOI)技术在200~400℃高温器件和集成电路方面有着广泛的应用前景,但对于沟道长度≤0.18μm的短沟道器件在200℃以上的高温下阈值电压漂移量达40%以上,漏电流达μA级,无法满足电路设计要求。本文研究了基于0.15μm SOI工艺的1.5 V MOS器件电特性在高温下的退化机理和抑制方法,通过增加栅氧厚度、降低阱浓度、调整轻掺杂漏离子注入工艺等优化方法,实现了一种性能良好的短沟道高温SOI CMOS器件,在25~250℃温度范围内,该器件阈值电压漂移量<30%,饱和电流漂移量<15%,漏电流<1 nA/μm。此外采用仿真的方法分析了器件在高温下的漏区电势和电场的变化规律,将栅诱导漏极泄漏电流效应与器件高温漏电流关联起来,从而定性地解释了SOI短沟道器件高温漏电流退化的机理。展开更多
Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas(2 DEG) confinement in a short-gate AlGaN/...Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas(2 DEG) confinement in a short-gate AlGaN/GaN highelectron mobility transistor(HEMT). Based on the two-dimensional TCAD simulation, the direct current(DC) and radio frequency(RF) characteristics of the AlGaN/GaN/B_(0.01)Ga_(0.99)N structure HEMTs are theoretically studied. Our results show that the BGaN buffer device achieves good pinch-off quality and improves RF performance compared with GaN buffer device. The BGaN buffer device can allow a good immunity to shift of threshold voltage for the aspect ratio(LG/d)down to 6, which is much lower than that the GaN buffer device with L_G/d=11 can reach. Furthermore, due to a similar manner of enhancing 2 DEG confinement, the B_(0.01)Ga_(0.99)N buffer device has similar DC and RF characteristics to those the AlGaN buffer device possesses, and its ability to control short-channel effects(SCEs) is comparable to that of an Al_(0.03)Ga_(0.97)N buffer. Therefore, this BGaN buffer with very small B-content promises to be a new method to suppress SCEs in GaN HEMTs.展开更多
The influences of the main structure and physical parameters of the dual-gate GeOl MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium （Ge） ch...The influences of the main structure and physical parameters of the dual-gate GeOl MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium （Ge） channel thickness, doping concentration, gate oxide thickness and permittivity is determined by analyzing the on-state current, off-state current, short channel effect （SCE） and drain-induced barrier lowering （DIBL） effect of the GeOI MOSFET. When the channel thickness and its doping concentration are 10-18 nm and （5-9）×1017 cm-3, and the equivalent oxide thickness and permittivity of the gate dielectric are 0.8-1 nm and 15-30, respectively, excellent device performances of the small-scaled GeOI MOSFET can be achieved： on-state current of larger than 1475 μA/μm, off-state current of smaller than 0.1μA/μm, SCE-induced threshold-voltage drift of lower than 60 mV and DIBL-induced threshold-voltage drift of lower than 140 mV.展开更多
The existence of a multi-path channel under the water greatly decreases the accuracy of the short baseline positioning system.In this paper,the application of a time reversal mirror to the short baseline positioning s...The existence of a multi-path channel under the water greatly decreases the accuracy of the short baseline positioning system.In this paper,the application of a time reversal mirror to the short baseline positioning system was investigated.The time reversal mirror technique allowed the acoustic signal to better focus in an unknown environment,which effectively reduced the expansion of multi-path acoustic signals as well as improved the signal focusing.The signal-to-noise ratio（SNR） of the time reversal operator greatly increased and could be obtained by ensonifying the water.The technique was less affected by the environment and therefore more applicable to a complex shallow water environment.Numerical simulations and pool experiments were used to demonstrate the efficiency of this technique.展开更多
We propose the first statistical theory of language translation based on communication theory. The theory is based on New Testament translations from Greek to Latin and to other 35 modern languages. In a text translat...We propose the first statistical theory of language translation based on communication theory. The theory is based on New Testament translations from Greek to Latin and to other 35 modern languages. In a text translated into another language</span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">,</span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;"> all linguistic variables do numerically change. To study the chaotic data that emerge, we model any translation as a complex communication channel affected by “noise”, studied according to Communication Theory applied for the first time to this channel. This theory deals with aspects of languages more complex than those currently considered in machine translations. The input language is the “signal”, the output language is a “replica” of the input language, but largely perturbed by noise, indispensable, however, for conveying the meaning of the input language to its readers</span></span></span><span><span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><b><span style="font-family: Verdana;" cambria="" math","serif";"="">.</span></b></span></span><span style="font-family:""></span><span><span><span style="font-family:""><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">We have defined a noise-to-signal power ratio and found that channels are differently affected by translation noise. Communication channels are also characterized by channel capacity. The translation of novels has more constraints than the New Testament translations. We propose a global readability formula for alphabetical languages, not available for most of them, and conclude with a general theory of language translation which shows that direct and reverse channels are not symmetric. The general theory can also be applied to channels of texts belonging to the same language both to study how te展开更多
In this work, we use a 3-nm-thick Al0.64In0.36N back-barrier layer in In0.17Al0.83N/GaN high-electron mobility transistor （HEMT） to enhance electron confinement. Based on two-dimensional device simulations, the infl...In this work, we use a 3-nm-thick Al0.64In0.36N back-barrier layer in In0.17Al0.83N/GaN high-electron mobility transistor （HEMT） to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al0.64In0.36N back-barrier on the direct-current （DC） and radio-frequency （RF） characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al0.64In0.36N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect （SCE） for gate length decreasing down to 60 nm （9-nm top barrier）. For a 70-nm gate length, the peak current gain cut-off frequency （fT） and power gain cut-off frequency （fmax） of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length.展开更多
N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering （DIBL） was 6...N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering （DIBL） was 66mV/V for n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate n-MOSFET was 150 times less than that of a conventional planar n-MOSFET, These results demonstrate that groove-gate MOSFETs have excellent capabilities in suppressing short-channel effects. It is worth emphasizing that our groove-gate MOSFET devices are fabricated by using a simple process flow, with the potential of fabricating devices in the sub-100nm range.展开更多
Monolayer two-dimensional(2D)semiconductors are emerging as top candidates for the channels of the future chip industry due to their atomically thin body and superior immunity to short channel effect.However,the low s...Monolayer two-dimensional(2D)semiconductors are emerging as top candidates for the channels of the future chip industry due to their atomically thin body and superior immunity to short channel effect.However,the low saturation current caused by the high contact resistance(R_(c))in monolayer MoS2 field-effect transistors(FETs)limits ultimate electrical performance at scaled contact lengths,which seriously hinders application of monolayer MoS_(2 )transistors.Here we present a scalable strategy with a clean end-bond contact scheme that leads to size-independent electrodes and ultralow contact resistance of 2.5 kΩ·μm to achieve record high performances of saturation current density of 730μA·μm^(-1)at 300 K and 960μA·μm^(-1)at 6 K.Our end-bond contact strategy in monolayer MoS2 FETs enables the great potential for atomically thin integrated circuitry.展开更多
基金This work was supported by National Key R&D Program of China(2018YFA0703700 and 2016YFA0200700)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000)+2 种基金the National Natural Science Foundation of China(61625401,61851403,11674072,91964203,and 61804146)CAS Key Laboratory of Nanosystem and Hierarchical FabricationThe authors also gratefully acknowledge the support of Youth Innovation Promotion Association CAS.
文摘Overcoming the sub-5 nm gate length limit and decreasing the power dissipation are two main objects in the electronics research field. Besides advanced engineering techniques, considering new material systems may be helpful. Here, we demonstrate two-dimensional(2D) subthermionic field-effect transistors(FETs) with sub-5 nm gate lengths based on ferroelectric(FE) van der Waals heterostructures(vdWHs).The FE vd WHs are composed of graphene, MoS2, and CuInP2S6 acting as 2D contacts, channels, and ferroelectric dielectric layers, respectively. We first show that the as-fabricated long-channel device exhibits nearly hysteresis-free subthermionic switching over three orders of magnitude of drain current at room temperature. Further, we fabricate short-channel subthermionic FETs using metallic carbon nanotubes as effective gate terminals. A typical device shows subthermionic switching over five-to-six orders of magnitude of drain current with a minimum subthreshold swing of 6.1 mV/dec at room temperature. Our results indicate that 2D materials system is promising for advanced highly-integrated energy-efficient electronic devices.
基金Supported by Medical and public health technology research and development projects of Wu Xi science and technology development fund,No.CSE31N1501
文摘AIM To investigate the pharmacological effect of Tong XieYao Fang(TXYF) formula, a Chinese herbal formula, on Diarrhea-predominant irritable bowel syndrome(D-IBS) rats.METHODS In a neonatal maternal separation plus restraint stress(NMS + RS) model of D-IBS, male Sprague Dawley rats were randomly divided into two groups(NMS + RS group and TXYF-formula group) with no handlings were used as controls(NH group). Starting from postnatalday 60, rats in TXYF-formula group were administered TXYF-formula(4.92 g/100 g bodyweight) orally twice a day for 14 consecutive days while NH group and NMS + RS group were given distilled water. Using short-circuit current technology, we observed 5-HT-induced changes of current across ion channels, such as cystic fibrosis transmembrane conductance regulator(CFTR) Clchannel, epithelial Na+ channel(ENaC), Ca2+-dependent Cl- channel(CACC), Na+-K+-2Cl- co-transporter(NKCC), and Na+-HCO-3 co-transporter(NBC), in the colonic epithelium of three groups after exposure to drugs and specific blockers with a Power Lab System(AD Instruments International).RESULTS Under basal conditions, the changes of short-circuit current(?Isc, μA/cm2) induced by 5-HT were similar in NH group and TXYF-formula group, and both higher than NMS + RS group(70.86 μA/cm2 ± 12.32 μA/cm2, 67.67 μA/cm2 ± 11.68 μA/cm2 vs 38.8 μA/cm2 ± 7.25 μA/cm2, P < 0.01, respectively). When CACC was blocked by 4,4′-diisothiocyanato-stilbene-2,2′-disulfonic acid, 5-HT-induced ?Isc was smaller in NMS + RS group than in NH group and TXYF-formula group, respectively(48.41 μA/cm2 ± 13.15 μA/cm2 vs 74.62 μA/cm2 ± 10.73 μA/cm2, 69.22 μA/cm2 ± 11.7 μA/cm2, P < 0.05, respectively). The similar result could be obtained when ENaC was blocked by Amiloride(44.69 μA/cm2 ± 12.58 μA/cm2 vs 62.05 μA/cm2 ± 11.26 μA/cm2, 62.11 μA/cm2 ± 12.01 μA/cm2, P < 0.05, respectively). However, when CFTR Cl- channel was blocked by 1,1-dimethyl piperidinium chloride(DPC), 5-HT-induced ?Isc did not significantly differ in three groups(42.2
文摘We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation （10000 randomizations）. With this simulation, we could study the effects of varying the dimensions （length and width）, and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region （off） and overthreshold （on）. It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion （compared with that of the subthreshold）. These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.
文摘绝缘体上硅(Silicon on insulator,SOI)技术在200~400℃高温器件和集成电路方面有着广泛的应用前景,但对于沟道长度≤0.18μm的短沟道器件在200℃以上的高温下阈值电压漂移量达40%以上,漏电流达μA级,无法满足电路设计要求。本文研究了基于0.15μm SOI工艺的1.5 V MOS器件电特性在高温下的退化机理和抑制方法,通过增加栅氧厚度、降低阱浓度、调整轻掺杂漏离子注入工艺等优化方法,实现了一种性能良好的短沟道高温SOI CMOS器件,在25~250℃温度范围内,该器件阈值电压漂移量<30%,饱和电流漂移量<15%,漏电流<1 nA/μm。此外采用仿真的方法分析了器件在高温下的漏区电势和电场的变化规律,将栅诱导漏极泄漏电流效应与器件高温漏电流关联起来,从而定性地解释了SOI短沟道器件高温漏电流退化的机理。
基金Project supported by the Foundation Project of the Science and Technology on Electro-Optical Information Security Control Laboratory,China(Grant No.614210701041705)
文摘Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas(2 DEG) confinement in a short-gate AlGaN/GaN highelectron mobility transistor(HEMT). Based on the two-dimensional TCAD simulation, the direct current(DC) and radio frequency(RF) characteristics of the AlGaN/GaN/B_(0.01)Ga_(0.99)N structure HEMTs are theoretically studied. Our results show that the BGaN buffer device achieves good pinch-off quality and improves RF performance compared with GaN buffer device. The BGaN buffer device can allow a good immunity to shift of threshold voltage for the aspect ratio(LG/d)down to 6, which is much lower than that the GaN buffer device with L_G/d=11 can reach. Furthermore, due to a similar manner of enhancing 2 DEG confinement, the B_(0.01)Ga_(0.99)N buffer device has similar DC and RF characteristics to those the AlGaN buffer device possesses, and its ability to control short-channel effects(SCEs) is comparable to that of an Al_(0.03)Ga_(0.97)N buffer. Therefore, this BGaN buffer with very small B-content promises to be a new method to suppress SCEs in GaN HEMTs.
基金Project supported by the National Natural Science Foundation of China(No.61274112)
文摘The influences of the main structure and physical parameters of the dual-gate GeOl MOSFET on the device performance are investigated by using a TCAD 2D device simulator. A reasonable value range of germanium （Ge） channel thickness, doping concentration, gate oxide thickness and permittivity is determined by analyzing the on-state current, off-state current, short channel effect （SCE） and drain-induced barrier lowering （DIBL） effect of the GeOI MOSFET. When the channel thickness and its doping concentration are 10-18 nm and （5-9）×1017 cm-3, and the equivalent oxide thickness and permittivity of the gate dielectric are 0.8-1 nm and 15-30, respectively, excellent device performances of the small-scaled GeOI MOSFET can be achieved： on-state current of larger than 1475 μA/μm, off-state current of smaller than 0.1μA/μm, SCE-induced threshold-voltage drift of lower than 60 mV and DIBL-induced threshold-voltage drift of lower than 140 mV.
基金Supported by the National Defense Basic Foundation of China B2420710007
文摘The existence of a multi-path channel under the water greatly decreases the accuracy of the short baseline positioning system.In this paper,the application of a time reversal mirror to the short baseline positioning system was investigated.The time reversal mirror technique allowed the acoustic signal to better focus in an unknown environment,which effectively reduced the expansion of multi-path acoustic signals as well as improved the signal focusing.The signal-to-noise ratio（SNR） of the time reversal operator greatly increased and could be obtained by ensonifying the water.The technique was less affected by the environment and therefore more applicable to a complex shallow water environment.Numerical simulations and pool experiments were used to demonstrate the efficiency of this technique.
文摘We propose the first statistical theory of language translation based on communication theory. The theory is based on New Testament translations from Greek to Latin and to other 35 modern languages. In a text translated into another language</span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;">,</span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><span style="font-family:Verdana;"> all linguistic variables do numerically change. To study the chaotic data that emerge, we model any translation as a complex communication channel affected by “noise”, studied according to Communication Theory applied for the first time to this channel. This theory deals with aspects of languages more complex than those currently considered in machine translations. The input language is the “signal”, the output language is a “replica” of the input language, but largely perturbed by noise, indispensable, however, for conveying the meaning of the input language to its readers</span></span></span><span><span></span></span><span style="font-family:Verdana;"><span style="font-family:Verdana;"><b><span style="font-family: Verdana;" cambria="" math","serif";"="">.</span></b></span></span><span style="font-family:""></span><span><span><span style="font-family:""><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">We have defined a noise-to-signal power ratio and found that channels are differently affected by translation noise. Communication channels are also characterized by channel capacity. The translation of novels has more constraints than the New Testament translations. We propose a global readability formula for alphabetical languages, not available for most of them, and conclude with a general theory of language translation which shows that direct and reverse channels are not symmetric. The general theory can also be applied to channels of texts belonging to the same language both to study how te
基金supported by the Natural Science Foundation of Hebei Province,China(Grant No.F2013202256)
文摘In this work, we use a 3-nm-thick Al0.64In0.36N back-barrier layer in In0.17Al0.83N/GaN high-electron mobility transistor （HEMT） to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al0.64In0.36N back-barrier on the direct-current （DC） and radio-frequency （RF） characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al0.64In0.36N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect （SCE） for gate length decreasing down to 60 nm （9-nm top barrier）. For a 70-nm gate length, the peak current gain cut-off frequency （fT） and power gain cut-off frequency （fmax） of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length.
基金Project supported by the National Natural Science Foundation of China （Grant No 60376024）.
文摘N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering （DIBL） was 66mV/V for n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate n-MOSFET was 150 times less than that of a conventional planar n-MOSFET, These results demonstrate that groove-gate MOSFETs have excellent capabilities in suppressing short-channel effects. It is worth emphasizing that our groove-gate MOSFET devices are fabricated by using a simple process flow, with the potential of fabricating devices in the sub-100nm range.
基金supported by the Natural Science Foundation of Beijing Municipality(No.Z180011)the National Natural Science Foundation of China(Nos.51991340,51991342,51527802,51972022,51722203,and 51672026)+2 种基金the Overseas Expertise Introduction Projects for Discipline Innovation(No.B14003)the National Key Research and Development Program of China(Nos.2016YFA0202701,and 2018YFA0703503)the Fundamental Research Funds for the Central Universities(No.FRF-TP-19-025A3).
文摘Monolayer two-dimensional(2D)semiconductors are emerging as top candidates for the channels of the future chip industry due to their atomically thin body and superior immunity to short channel effect.However,the low saturation current caused by the high contact resistance(R_(c))in monolayer MoS2 field-effect transistors(FETs)limits ultimate electrical performance at scaled contact lengths,which seriously hinders application of monolayer MoS_(2 )transistors.Here we present a scalable strategy with a clean end-bond contact scheme that leads to size-independent electrodes and ultralow contact resistance of 2.5 kΩ·μm to achieve record high performances of saturation current density of 730μA·μm^(-1)at 300 K and 960μA·μm^(-1)at 6 K.Our end-bond contact strategy in monolayer MoS2 FETs enables the great potential for atomically thin integrated circuitry.
