In this paper, total ionizing dose effect of NMOS transistors in advanced CMOS technology are exam- ined. The radiation tests are performed at 60Co sources at the dose rate of 50 rad (Si)/s. The investigation's res...In this paper, total ionizing dose effect of NMOS transistors in advanced CMOS technology are exam- ined. The radiation tests are performed at 60Co sources at the dose rate of 50 rad (Si)/s. The investigation's results show that the radiation-induced charge buildup in the gate oxide can be ignored, and the field oxide isolation struc- ture is the main total dose problem. The total ionizing dose (TID) radiation effects of field oxide parasitic transistors are studied in detail. An analytical model of radiation defect charge induced by TID damage in field oxide is estab- lished. The I-V characteristics of the NMOS parasitic transistors at different doses are modeled by using a surface potential method. The modeling method is verified by the experimental I V characteristics of 180 nm commer- cial NMOS device induced by TID radiation at different doses. The model results are in good agreement with the radiation experimental results, which shows the analytical model can accurately predict the radiation response characteristics of advanced bulk CMOS technology device.展开更多
A testing structure was developed to more effectively detect the poly stringer defects in contemporary CMOS ICs. This structure is much more sensitive to poly stringer defects and is closer to the real product layout ...A testing structure was developed to more effectively detect the poly stringer defects in contemporary CMOS ICs. This structure is much more sensitive to poly stringer defects and is closer to the real product layout than the currently widely used structure using an active dummy underneath a poly comb. Many testing structure pieces manufactured in a 0.11 μm copper process line were used to compare the current design with the conventional testing structure. The data shows that the new structure more efficiently detects poly stringers. The results also show that the poly stringers are related to the shallow trench isolation (STI) width. This structure can be used to identify new designs for manufacturing rules for the active space. Thus, this method is very useful for IC foundries to detect poly stringers and to characterize the processing line capability and tune the process recipe to improve product yields.展开更多
基金Project supported by the National Natural Science Foundation of China(No.11305126)
文摘In this paper, total ionizing dose effect of NMOS transistors in advanced CMOS technology are exam- ined. The radiation tests are performed at 60Co sources at the dose rate of 50 rad (Si)/s. The investigation's results show that the radiation-induced charge buildup in the gate oxide can be ignored, and the field oxide isolation struc- ture is the main total dose problem. The total ionizing dose (TID) radiation effects of field oxide parasitic transistors are studied in detail. An analytical model of radiation defect charge induced by TID damage in field oxide is estab- lished. The I-V characteristics of the NMOS parasitic transistors at different doses are modeled by using a surface potential method. The modeling method is verified by the experimental I V characteristics of 180 nm commer- cial NMOS device induced by TID radiation at different doses. The model results are in good agreement with the radiation experimental results, which shows the analytical model can accurately predict the radiation response characteristics of advanced bulk CMOS technology device.
基金Supported by the Important National Science & Technology Specific Projects (No. 2008ZX01035-001)
文摘A testing structure was developed to more effectively detect the poly stringer defects in contemporary CMOS ICs. This structure is much more sensitive to poly stringer defects and is closer to the real product layout than the currently widely used structure using an active dummy underneath a poly comb. Many testing structure pieces manufactured in a 0.11 μm copper process line were used to compare the current design with the conventional testing structure. The data shows that the new structure more efficiently detects poly stringers. The results also show that the poly stringers are related to the shallow trench isolation (STI) width. This structure can be used to identify new designs for manufacturing rules for the active space. Thus, this method is very useful for IC foundries to detect poly stringers and to characterize the processing line capability and tune the process recipe to improve product yields.