In order to evaluate the feasibility of safe mining close to the contact zone under reduced security coal pillar conditions at a coal mine in eastern China, the interaction mechanism of the interface between deep buri...In order to evaluate the feasibility of safe mining close to the contact zone under reduced security coal pillar conditions at a coal mine in eastern China, the interaction mechanism of the interface between deep buried sand and a paleo-weathered rock mass was investigated in the laboratory by direct shear testing. A DRS-1 high pressure soil shear testing machine and orthogonal design method were used in the direct shear tests. Variance and range methods were applied to analyze the sensitivity of each factor that has an influence on the mechanical characters of the interface. The test results show that the normal pressure is the main influencing factor for mechanical characteristics of the interface, while the lithological characters and roughness are minor factors; the shear stress against shear displacement curve for the interface shows an overall hyperbola relationship, no obvious peak stress and dilatancy was observed.When the normal pressure is 6 MPa, the shear strengths of interfaces with different roughness are basically the same, and when the normal pressure is more than 8 MPa, the larger the roughness of the interface, the larger will be the shear strength; the shear strength has a better linear relationship with the normal pressure, which can be described by a linear Mohr–Coulomb criterion.展开更多
The capacitance-voltage（C-V） characteristic of the TiW/p-InP Schottky barrier diodes（SBDs） is analyzed considering the effects of the interface state（N（ss））, series resistance（Rs）, and deep level defects. Th...The capacitance-voltage（C-V） characteristic of the TiW/p-InP Schottky barrier diodes（SBDs） is analyzed considering the effects of the interface state（N（ss））, series resistance（Rs）, and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α andβ are used to reflect the N（ss） and Rs on the C-V characteristics, respectively. The α decreases with the increase of frequency,while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β.From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.展开更多
基金the National Natural Science Foundation of China(Nos.41172290 and40572160)
文摘In order to evaluate the feasibility of safe mining close to the contact zone under reduced security coal pillar conditions at a coal mine in eastern China, the interaction mechanism of the interface between deep buried sand and a paleo-weathered rock mass was investigated in the laboratory by direct shear testing. A DRS-1 high pressure soil shear testing machine and orthogonal design method were used in the direct shear tests. Variance and range methods were applied to analyze the sensitivity of each factor that has an influence on the mechanical characters of the interface. The test results show that the normal pressure is the main influencing factor for mechanical characteristics of the interface, while the lithological characters and roughness are minor factors; the shear stress against shear displacement curve for the interface shows an overall hyperbola relationship, no obvious peak stress and dilatancy was observed.When the normal pressure is 6 MPa, the shear strengths of interfaces with different roughness are basically the same, and when the normal pressure is more than 8 MPa, the larger the roughness of the interface, the larger will be the shear strength; the shear strength has a better linear relationship with the normal pressure, which can be described by a linear Mohr–Coulomb criterion.
基金Project supported by the National Natural Science Foundation of China(Grant No.61774108)the Scientific Research Foundation for the Returned Overseas Chinese Scholars,Ministry of Education of China
文摘The capacitance-voltage（C-V） characteristic of the TiW/p-InP Schottky barrier diodes（SBDs） is analyzed considering the effects of the interface state（N（ss））, series resistance（Rs）, and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α andβ are used to reflect the N（ss） and Rs on the C-V characteristics, respectively. The α decreases with the increase of frequency,while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β.From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.
