铁电存储器(ferroelectric random access memory,FRAM)是利用铁电材料可以自发极化,并且极化强度可以随外电场的作用而重新取向的特性为存储机制的一种非易失性存储器,它以其功耗低、读写速度快、耐久度高、抗辐射能力强等优点,成为存...铁电存储器(ferroelectric random access memory,FRAM)是利用铁电材料可以自发极化,并且极化强度可以随外电场的作用而重新取向的特性为存储机制的一种非易失性存储器,它以其功耗低、读写速度快、耐久度高、抗辐射能力强等优点,成为存储器领域最具潜力的产品之一。首先设计了一种1 kbit铁电存储芯片的整体架构,其次对其不同的工作时序进行了分析,再次对铁电存储器外围译码电路、驱动电路以及灵敏放大电路等电路模块进行了设计,每个设计过程包括电路设计、电路仿真和版图设计。由仿真结果可以看出,电路的选取均适用于铁电存储器的要求,为以后大容量、产品化的铁电存储器设计起到了基础性的指导作用。展开更多
Novel schemes for a charge sensitive amplifier （CSA） and a CR-（RC）, semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented. The CSA is designed with poly-resistors as ...Novel schemes for a charge sensitive amplifier （CSA） and a CR-（RC）, semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented. The CSA is designed with poly-resistors as feedback components to reduce noise. Compared with conventional CSA, the input referred equivalent noise charge（ENC） is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss. The CR-（RC）,semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction.展开更多
通过对热噪声模型和灵敏放大器匹配机理的研究,提出一种可自适应匹配的真随机数发生器(True Random Number Generator,TRNG)设计方案。该方案首先在灵敏放大器中嵌入可配置NMOS阵列,通过调整阵列的等效宽长比实现灵敏放大器工作电流的平...通过对热噪声模型和灵敏放大器匹配机理的研究,提出一种可自适应匹配的真随机数发生器(True Random Number Generator,TRNG)设计方案。该方案首先在灵敏放大器中嵌入可配置NMOS阵列,通过调整阵列的等效宽长比实现灵敏放大器工作电流的平衡;然后在输出端增设负载隔离单元实现互补输出负载的匹配,提高序列随机性;最后通过动态补偿算法实现TRNG自适应校准,提高其适用范围。电路采用TSMC 65 nm CMOS工艺实现,实验结果表明TRNG在0.8 V^1.4 V电压和-40℃~120℃的环境下能正常工作,最大输出速率可达1 GHz,平均能效为0.165 pJ/bit。输出的随机序列通过了NIST-SP 800-22测试。展开更多
The principle, structure and system of nonlinear liquid crystal optical signal amplifiers are described. Experimental results are theoretically analysed for optical signal amplifers. It shows that this type of the opt...The principle, structure and system of nonlinear liquid crystal optical signal amplifiers are described. Experimental results are theoretically analysed for optical signal amplifers. It shows that this type of the optical signal amplifiers are comprised of liquid crystal light sensitive medium which can receive a modulated signal optic wave and a pump wave, and can be applied to optical transmission systems.展开更多
文摘铁电存储器(ferroelectric random access memory,FRAM)是利用铁电材料可以自发极化,并且极化强度可以随外电场的作用而重新取向的特性为存储机制的一种非易失性存储器,它以其功耗低、读写速度快、耐久度高、抗辐射能力强等优点,成为存储器领域最具潜力的产品之一。首先设计了一种1 kbit铁电存储芯片的整体架构,其次对其不同的工作时序进行了分析,再次对铁电存储器外围译码电路、驱动电路以及灵敏放大电路等电路模块进行了设计,每个设计过程包括电路设计、电路仿真和版图设计。由仿真结果可以看出,电路的选取均适用于铁电存储器的要求,为以后大容量、产品化的铁电存储器设计起到了基础性的指导作用。
文摘Novel schemes for a charge sensitive amplifier （CSA） and a CR-（RC）, semi-Gaussian shaper in a fully integrated CMOS readout circuit for particle detectors are presented. The CSA is designed with poly-resistors as feedback components to reduce noise. Compared with conventional CSA, the input referred equivalent noise charge（ENC） is simulated to be reduced from 5036e to 2381e with a large detector capacitance of 150pF at the cost of 0.5V output swing loss. The CR-（RC）,semi-Gaussian shaper uses MOS transistors in the triode region in series with poly-resistors to compensate process variation without much linearity reduction.
文摘The principle, structure and system of nonlinear liquid crystal optical signal amplifiers are described. Experimental results are theoretically analysed for optical signal amplifers. It shows that this type of the optical signal amplifiers are comprised of liquid crystal light sensitive medium which can receive a modulated signal optic wave and a pump wave, and can be applied to optical transmission systems.
