The stress-strain-resistance relations of the Fe-Mn-Si alloys with different Si content have been investigated by measuring strain (ε) and resistance (△ R/R) upon tension synchronously. The results show that the str...The stress-strain-resistance relations of the Fe-Mn-Si alloys with different Si content have been investigated by measuring strain (ε) and resistance (△ R/R) upon tension synchronously. The results show that the strum induced γ→ε martensitic transfor- mation increases the strain sensitivity coeffcient of resistance (K) for the Fe-Mn-Si alloys in plastic region. There is a critical strum where dσ/dε becomes a constant value. Si increases the critical strum. A correlation between the critical strain and shape memory effect (SME) in the Fe-Mn-Si alloys is suggested.展开更多
基于WRF(Weather Research and Forecasting Model,天气预报模式)及其三维变分同化系统3DVAR,利用江苏省GPS/PWV(PWV:Precipitable Water Vapor,GPS反演得到可降水量)资料,并将其与探空资料比对订正,针对2011年6月18日梅雨锋暴雨进行3 ...基于WRF(Weather Research and Forecasting Model,天气预报模式)及其三维变分同化系统3DVAR,利用江苏省GPS/PWV(PWV:Precipitable Water Vapor,GPS反演得到可降水量)资料,并将其与探空资料比对订正,针对2011年6月18日梅雨锋暴雨进行3 h循环同化模拟。在降水参数化方案敏感性试验与单点同化试验基础上,设计多组试验对6 h降水量进行TS(Threat Score)评估。结果表明:(1)同化订正GPS/PWV资料对降水预报能力显著提高,特别是大雨、暴雨量级以上的预报能力;(2)降水量的RMSE(Root Mean Squared Error,均方根误差)相比控制试验均减小,CC(Correlation Coefficient,相关系数)均增大,最显著试验RMSE从19.1 mm下降到12.6 mm,CC从0.45上升到0.74;(3)NMC方法统计的背景误差协方差条件下中雨至暴雨量级TS评分均有一定程度提高,默认的背景误差协方差在大雨以上量级TS评分大幅提高。展开更多
A high stability in-circuit reprogrammable technique control system for a capacitive MEMS accelerometer is presented. Modulation and demodulation are used to separate the signal from the low frequency noise. A low-noi...A high stability in-circuit reprogrammable technique control system for a capacitive MEMS accelerometer is presented. Modulation and demodulation are used to separate the signal from the low frequency noise. A low-noise low-offset charge integrator is employed in this circuit to implement a capacitance-to-voltage converter and minimize the noise and offset. The application-specific integrated circuit （ASIC） is fabricated in a 0.5 /μm one-ploy three-metal CMOS process. The measured results of the proposed circuit show that the noise floor of the ASIC is -116 dBV, the sensitivity of the accelerometer is 66 mV/g with a nonlinearity of 0.5%. The chip occupies 3.5×2.5 mm2 and the current is 3.5 mA.展开更多
文摘The stress-strain-resistance relations of the Fe-Mn-Si alloys with different Si content have been investigated by measuring strain (ε) and resistance (△ R/R) upon tension synchronously. The results show that the strum induced γ→ε martensitic transfor- mation increases the strain sensitivity coeffcient of resistance (K) for the Fe-Mn-Si alloys in plastic region. There is a critical strum where dσ/dε becomes a constant value. Si increases the critical strum. A correlation between the critical strain and shape memory effect (SME) in the Fe-Mn-Si alloys is suggested.
文摘基于WRF(Weather Research and Forecasting Model,天气预报模式)及其三维变分同化系统3DVAR,利用江苏省GPS/PWV(PWV:Precipitable Water Vapor,GPS反演得到可降水量)资料,并将其与探空资料比对订正,针对2011年6月18日梅雨锋暴雨进行3 h循环同化模拟。在降水参数化方案敏感性试验与单点同化试验基础上,设计多组试验对6 h降水量进行TS(Threat Score)评估。结果表明:(1)同化订正GPS/PWV资料对降水预报能力显著提高,特别是大雨、暴雨量级以上的预报能力;(2)降水量的RMSE(Root Mean Squared Error,均方根误差)相比控制试验均减小,CC(Correlation Coefficient,相关系数)均增大,最显著试验RMSE从19.1 mm下降到12.6 mm,CC从0.45上升到0.74;(3)NMC方法统计的背景误差协方差条件下中雨至暴雨量级TS评分均有一定程度提高,默认的背景误差协方差在大雨以上量级TS评分大幅提高。
文摘A high stability in-circuit reprogrammable technique control system for a capacitive MEMS accelerometer is presented. Modulation and demodulation are used to separate the signal from the low frequency noise. A low-noise low-offset charge integrator is employed in this circuit to implement a capacitance-to-voltage converter and minimize the noise and offset. The application-specific integrated circuit （ASIC） is fabricated in a 0.5 /μm one-ploy three-metal CMOS process. The measured results of the proposed circuit show that the noise floor of the ASIC is -116 dBV, the sensitivity of the accelerometer is 66 mV/g with a nonlinearity of 0.5%. The chip occupies 3.5×2.5 mm2 and the current is 3.5 mA.
