A fully self-aligned symmetrical split-gate cell structure for 2-bit per cell flash memory with a very competitive bit size is presented. One common select gate is located between two floating gates and a pair of sour...A fully self-aligned symmetrical split-gate cell structure for 2-bit per cell flash memory with a very competitive bit size is presented. One common select gate is located between two floating gates and a pair of source/drain junctions are shared by the 2 bits. The fabrication method utilized here to create a self-aligned structure is to form a spacer against the prior layer without any additional mask. Although the cell consists of three channels in a series, the attributes from conventional split gate flash are still preserved with appropriate bias conditions. Program and erase operation is performed by using a source side injection （SSI） and a poly-to-poly tunneling mechanism respectively.展开更多
A highly reliable interface of self-aligned barrier CuSiN thin layer between the Cu film and the nano-porous SiC：H （p-SiC：H） capping barrier （k=3.3） has been developed in the present work. With the introduction ...A highly reliable interface of self-aligned barrier CuSiN thin layer between the Cu film and the nano-porous SiC：H （p-SiC：H） capping barrier （k=3.3） has been developed in the present work. With the introduction of self-aligned barrier （SAB） CuSiN between a Cu film and a p-SiC：H capping barrier, the interfacial thermal stability and the adhesion of the Cu/p-SiC：H film are considerably enhanced. A significant improvement of adhesion strength and thermal stability of Cu/p-SiC：H/SiOC：H film stack has been achieved by optimizing the pre-clean step before caplayer deposition and by forming the CuSiN-like phase. This cap layer on the surface of the Cu can provide a more cohesive interface and effectively suppress Cu atom migration as well.展开更多
Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied...Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied for current confinement.Output light power of 10.1mW and slope efficiency of 0.462mW/mA are obtained under room temperature,pulse operation,and injection current of 28mA.The maximum light power is 13.1mW under pulse operation.Output light power of 7.1mW,lasing wavelength of 974nm,and FWHM of 0.6nm are obtained under CW condition.The study of oxide-aperture influence on threshold current and differential resistance shows that lower threshold current can be obtained with a smaller oxide-aperture diameter.展开更多
文摘A fully self-aligned symmetrical split-gate cell structure for 2-bit per cell flash memory with a very competitive bit size is presented. One common select gate is located between two floating gates and a pair of source/drain junctions are shared by the 2 bits. The fabrication method utilized here to create a self-aligned structure is to form a spacer against the prior layer without any additional mask. Although the cell consists of three channels in a series, the attributes from conventional split gate flash are still preserved with appropriate bias conditions. Program and erase operation is performed by using a source side injection （SSI） and a poly-to-poly tunneling mechanism respectively.
基金supported by the National Natural Science Foundation of China(Nos.11075112,61040034)Specialized Research Fund for the Doctoral Program of Higher Education(New Teachers,No.20100181120112)
文摘A highly reliable interface of self-aligned barrier CuSiN thin layer between the Cu film and the nano-porous SiC：H （p-SiC：H） capping barrier （k=3.3） has been developed in the present work. With the introduction of self-aligned barrier （SAB） CuSiN between a Cu film and a p-SiC：H capping barrier, the interfacial thermal stability and the adhesion of the Cu/p-SiC：H film are considerably enhanced. A significant improvement of adhesion strength and thermal stability of Cu/p-SiC：H/SiOC：H film stack has been achieved by optimizing the pre-clean step before caplayer deposition and by forming the CuSiN-like phase. This cap layer on the surface of the Cu can provide a more cohesive interface and effectively suppress Cu atom migration as well.
文摘Top-emitting oxide-confined intra-cavity contact structure 980nm VCSEL is fabricated by low-pressure metal organic chemical-vapor deposition (LP-MOCVD).Self-aligning etching process and selective oxidation are applied for current confinement.Output light power of 10.1mW and slope efficiency of 0.462mW/mA are obtained under room temperature,pulse operation,and injection current of 28mA.The maximum light power is 13.1mW under pulse operation.Output light power of 7.1mW,lasing wavelength of 974nm,and FWHM of 0.6nm are obtained under CW condition.The study of oxide-aperture influence on threshold current and differential resistance shows that lower threshold current can be obtained with a smaller oxide-aperture diameter.
