The modes of grain selection in spiral selector were investigated by both a ProCAST simulation and experimental confirmation.The results show that the efficiency of grain selection in starter block is associated with ...The modes of grain selection in spiral selector were investigated by both a ProCAST simulation and experimental confirmation.The results show that the efficiency of grain selection in starter block is associated with the geometry shape.At the early stage of grain selection,the optimization of grain orientation is dominated by competitive grain growth,but the optimization of grain orientation in starter block is gradually dominated by geometry shape at the later stage of grain selection.Besides,the spiral part could also optimize the orientation of the selected single crystal when the initial angle is large enough,and the single crystal selection in spiral parts with different pitch lengths and initial angles is dominated by different modes.The simulation results agree well with experimental ones.展开更多
The water-soluble carboxymethyl-cyclodextrin polymer (CM-CD polymer) was synthesized and used as capillary electrophoresis chiral selector. Verrapamil and thiopentorusodium were well separated using CM-CD polymer as c...The water-soluble carboxymethyl-cyclodextrin polymer (CM-CD polymer) was synthesized and used as capillary electrophoresis chiral selector. Verrapamil and thiopentorusodium were well separated using CM-CD polymer as chiral selector.展开更多
The recent development of three-dimensional semiconductor integration technology demands a key component-the ovonic threshold switching(OTS)selector to suppress the current leakage in the high-density memory chips.Yet...The recent development of three-dimensional semiconductor integration technology demands a key component-the ovonic threshold switching(OTS)selector to suppress the current leakage in the high-density memory chips.Yet,the unsatisfactory performance of existing OTS materials becomes the bottleneck of the industrial advancement.The sluggish development of OTS materials,which are usually made from chalcogenide glass,should be largely attributed to the insufficient understanding of the electronic structure in these materials,despite of intensive research in the past decade.Due to the heavy first-principles computation on disordered systems,a universal theory to explain the origin of mid-gap states(MGS),which are the key feature leading to the OTS behavior,is still lacking.To avoid the formidable computational tasks,we adopt machine learning method to understand and predict MGS in typical OTS materials.We build hundreds of chalcogenide glass models and collect major structural features from both short-range order(SRO)and medium-range order(MRO)of the amorphous cells.After training the artificial neural network using these features,the accuracy has reached~95%when it recognizes MGS in new glass.By analyzing the synaptic weights of the input structural features,we discover that the bonding and coordination environments from SRO and particularly MRO are closely related to MGS.The trained model could be used in many other OTS chalcogenides after minor modification.The intelligent machine learning allows us to understand the OTS mechanism from vast amount of structural data without heavy computational tasks,providing a new strategy to design functional amorphous materials from first principles.展开更多
In this paper,we study compressed data separation(CDS)problem,i.e.,sparse data separation from a few linear random measurements.We propose the nonconvex ℓ_(q)-split analysis with ℓ_(∞)-constraint and 0<q≤1.We cal...In this paper,we study compressed data separation(CDS)problem,i.e.,sparse data separation from a few linear random measurements.We propose the nonconvex ℓ_(q)-split analysis with ℓ_(∞)-constraint and 0<q≤1.We call the algorithm ℓ_(q)-split-analysis Dantzig selector(ℓ_(q)-split-analysis DS).We show that the two distinct subcomponents that are approximately sparse in terms of two different dictionaries could be stably approximated via the ℓ_(q)-split-analysis DS,provided that the measurement matrix satisfies either a classical D-RIP(Restricted Isometry Property with respect to Dictionaries and ℓ_(2) norm)or a relatively new(D,q)-RIP(RIP with respect to Dictionaries and ℓ_(q)-quasi norm)condition and the two different dictionaries satisfy a mutual coherence condition between them.For the Gaussian random measurements,the measurement number needed for the(D,q)-RIP condition is far less than those needed for the D-RIP condition and the(D,1)-RIP condition when q is small enough.展开更多
We propose and demonstrate an integrated microwave photonic sideband selector based on the thin-film lithium niobate(TFLN)platform by integrating an electro-optic Mach-Zehnder modulator(MZM)and a thermo-optic tunable ...We propose and demonstrate an integrated microwave photonic sideband selector based on the thin-film lithium niobate(TFLN)platform by integrating an electro-optic Mach-Zehnder modulator(MZM)and a thermo-optic tunable flat-top microring filter.The sideband selector has two functions:electro-optic modulation of wideband RF signal and sideband selection.The microwave photonic sideband selector supports processing RF signals up to 40 GHz,with undesired sidebands effectively suppressed by more than 25 d B.The demonstrated device shows great potential for TFLN integrated technology in microwave photonic applications,such as mixing and frequency measurement.展开更多
Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimen...Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.展开更多
The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple structure.However,these devices are uns...The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple structure.However,these devices are unsuitable for cross-point architectures because of the difficulty in controlling the random filament formation that results in large fluctuations in the threshold voltage during operation.In this study,we investigated the unidirectional threshold transition characteristics associated with an Ag/GST/HfO_(x)/Pt-based bilayer selector and demonstrated the occurrence of a low leakage current(<1×10^(-11) A) and low distribution of the threshold voltage(Δ0.11 V).The bilayer structure could control the filament formation in the intermediate state through the insertion of an HfO_(x) tunneling barrier.By stacking a bilayer selector with NiO_(x)based resistive random-access memory,the leakage and programming currents of the device could be significantly decreased.For the crossbar array configuration,we performed equivalent circuit analysis of a one-selector oneresistor(1S1R) devices and estimated the optimal array size to demonstrate the applicability of the proposed structure.The maximum acceptable crossbar array size of the 1S1R device with the Ag/GST/HfO_(x)/Pt/Ti/NiO_(x)/Pt structure was 5.29×10^(14)(N^(2),N=2.3×10^(7)).展开更多
The single crystal of nickel-base super alloy is widely used for making turbine blades.The microstructure of the alloy,especially the deviation of preferred orientation of single crystal,possesses the most important e...The single crystal of nickel-base super alloy is widely used for making turbine blades.The microstructure of the alloy,especially the deviation of preferred orientation of single crystal,possesses the most important effects on the mechanical properties of the blades.In this study,the single crystal ingot and blade of DZ417G alloy are prepared by means of the spiral crystal selector as well as the directional solidification method,and the effect of the parameters(i.e.,the shape of samples,the withdrawal rate)and the structure of the spiral crystal selector on the formation of single crystal and the crystal orientation are investigated.This method can prepare not only the single crystal ingot with simple shape but also the single crystal blades with the complex shape,the simple with rod-shape can form the single crystal easily with a relatively fast withdrawal rate,but the blade with complex shape requires much slower withdrawal rate to form single crystal.The length of the crystal selector almost has no effect on the crystal orientation.However,the angle of selector plays an obvious role on the orientation;the selector with a smaller angle can effectively reduce the deviation of preferred orientation;the appropriate angle of selector to obtain optimal orientation is found to be around30°and the deviation of preferred orientation is about30°for this selector.展开更多
With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of...With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of data generated from the devices challenges the AIoT systems from information collection,storage,processing and communication.In the review,we introduce volatile threshold switching memristors,which can be roughly classified into three types:metallic conductive filament-based TS devices,amorphous chalcogenide-based ovonic threshold switching devices,and metal-insulator transition based TS devices.They play important roles in high-density storage,energy efficient computing and hardware security for AIoT systems.Firstly,a brief introduction is exhibited to describe the categories(materials and characteristics)of volatile TS devices.And then,switching mechanisms of the three types of TS devices are discussed and systematically summarized.After that,attention is focused on the applications in 3D cross-point memory technology with high storage-density,efficient neuromorphic computing,hardware security(true random number generators and physical unclonable functions),and others(steep subthreshold slope transistor,logic devices,etc.).Finally,the major challenges and future outlook of volatile threshold switching memristors are presented.展开更多
Six new kinds of amino acid derived β-cyclodextrins were synthesized to improve their water solubility and chiral separation properties. They are heptakis{2,6-di-O-[3-L-(1-isopropyl carboxyl methyl amino)-2-(hydroxy)...Six new kinds of amino acid derived β-cyclodextrins were synthesized to improve their water solubility and chiral separation properties. They are heptakis{2,6-di-O-[3-L-(1-isopropyl carboxyl methyl amino)-2-(hydroxy) propyl]}-β-cyclodextrin (i.e. L-Val-β-CD), heptakis{2,6-di-O-[3-L-(1-benzyl carboxyl methyl amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Phe-β-CD), heptakis{2,6-di-O-[3-(D, L-1-benzyl carboxyl methyl amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. D,L-Phe-β-CD), heptakis{2,6-di-O-[3-(L-1-hydroxymethyl carboxyl methyl amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Ser-β-CD), heptakis{2,6-di-O-[3-(L-1-carboxylmethyl carboxyl methyl amino)- 2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Asp-β-CD), heptakis{2,6-di-O-[3-(L-2-carboxyl tetramethylene amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Pro-β-CD). Their chemical structures were certified using FTIR and ()~1H NMR. Except for L-Phe-β-CD and D,L-Phe-β-CD, that are in soluble in water, the other amino acid derived β-CDs all have good water solubility. D,L-tyrosine and promethazine were baselinely separated by L-Val-β-CD in capillary electrophoresis.展开更多
基金supported by the National Basic Research Program(973 Program) of China under Grant No.2010CB631200(2010CB631206)the National Natural Science Foundation of China(NSFC) under Grant No.50801061,No.50931004,No.51071165the fund of the State Key Laboratory of Solidification Processing in NWPU under Grant No.SKLSP201112
文摘The modes of grain selection in spiral selector were investigated by both a ProCAST simulation and experimental confirmation.The results show that the efficiency of grain selection in starter block is associated with the geometry shape.At the early stage of grain selection,the optimization of grain orientation is dominated by competitive grain growth,but the optimization of grain orientation in starter block is gradually dominated by geometry shape at the later stage of grain selection.Besides,the spiral part could also optimize the orientation of the selected single crystal when the initial angle is large enough,and the single crystal selection in spiral parts with different pitch lengths and initial angles is dominated by different modes.The simulation results agree well with experimental ones.
文摘The water-soluble carboxymethyl-cyclodextrin polymer (CM-CD polymer) was synthesized and used as capillary electrophoresis chiral selector. Verrapamil and thiopentorusodium were well separated using CM-CD polymer as chiral selector.
基金National Key R&D Plan of China(Grant No.2019YFB2205100,2017YFB0701700)National Science and Technology Major Project of China(Grant No.2017ZX02301007-002)+2 种基金National Natural Science Foundation of China(Grant No.62174060)Fundamental Research Funds for the Central Universities,HUST(No.2021GCRC051)Hubei Key Laboratory of Advanced Memories.
文摘The recent development of three-dimensional semiconductor integration technology demands a key component-the ovonic threshold switching(OTS)selector to suppress the current leakage in the high-density memory chips.Yet,the unsatisfactory performance of existing OTS materials becomes the bottleneck of the industrial advancement.The sluggish development of OTS materials,which are usually made from chalcogenide glass,should be largely attributed to the insufficient understanding of the electronic structure in these materials,despite of intensive research in the past decade.Due to the heavy first-principles computation on disordered systems,a universal theory to explain the origin of mid-gap states(MGS),which are the key feature leading to the OTS behavior,is still lacking.To avoid the formidable computational tasks,we adopt machine learning method to understand and predict MGS in typical OTS materials.We build hundreds of chalcogenide glass models and collect major structural features from both short-range order(SRO)and medium-range order(MRO)of the amorphous cells.After training the artificial neural network using these features,the accuracy has reached~95%when it recognizes MGS in new glass.By analyzing the synaptic weights of the input structural features,we discover that the bonding and coordination environments from SRO and particularly MRO are closely related to MGS.The trained model could be used in many other OTS chalcogenides after minor modification.The intelligent machine learning allows us to understand the OTS mechanism from vast amount of structural data without heavy computational tasks,providing a new strategy to design functional amorphous materials from first principles.
基金Supported by the National Key Research and Development Program of China(Grant No.2021YFA1003500)the NSFC(Grant Nos.U21A20426,11971427,12071426 and 11901518)。
文摘In this paper,we study compressed data separation(CDS)problem,i.e.,sparse data separation from a few linear random measurements.We propose the nonconvex ℓ_(q)-split analysis with ℓ_(∞)-constraint and 0<q≤1.We call the algorithm ℓ_(q)-split-analysis Dantzig selector(ℓ_(q)-split-analysis DS).We show that the two distinct subcomponents that are approximately sparse in terms of two different dictionaries could be stably approximated via the ℓ_(q)-split-analysis DS,provided that the measurement matrix satisfies either a classical D-RIP(Restricted Isometry Property with respect to Dictionaries and ℓ_(2) norm)or a relatively new(D,q)-RIP(RIP with respect to Dictionaries and ℓ_(q)-quasi norm)condition and the two different dictionaries satisfy a mutual coherence condition between them.For the Gaussian random measurements,the measurement number needed for the(D,q)-RIP condition is far less than those needed for the D-RIP condition and the(D,1)-RIP condition when q is small enough.
基金supported by the National Key Research and Development Program of China(No.2021YFB2800104)the National Natural Science Foundation of China(Nos.62175079 and 62205119)。
文摘We propose and demonstrate an integrated microwave photonic sideband selector based on the thin-film lithium niobate(TFLN)platform by integrating an electro-optic Mach-Zehnder modulator(MZM)and a thermo-optic tunable flat-top microring filter.The sideband selector has two functions:electro-optic modulation of wideband RF signal and sideband selection.The microwave photonic sideband selector supports processing RF signals up to 40 GHz,with undesired sidebands effectively suppressed by more than 25 d B.The demonstrated device shows great potential for TFLN integrated technology in microwave photonic applications,such as mixing and frequency measurement.
基金M.Zhu acknowledges support by the National Outstanding Youth Program(62322411)the Hundred Talents Program(Chinese Academy of Sciences)+1 种基金the Shanghai Rising-Star Program(21QA1410800)The financial support was provided by the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB44010200).
文摘Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.
基金financially supported by the National Research Foundation of Korea (NRF)(No.2016R1A3B1908249)。
文摘The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple structure.However,these devices are unsuitable for cross-point architectures because of the difficulty in controlling the random filament formation that results in large fluctuations in the threshold voltage during operation.In this study,we investigated the unidirectional threshold transition characteristics associated with an Ag/GST/HfO_(x)/Pt-based bilayer selector and demonstrated the occurrence of a low leakage current(<1×10^(-11) A) and low distribution of the threshold voltage(Δ0.11 V).The bilayer structure could control the filament formation in the intermediate state through the insertion of an HfO_(x) tunneling barrier.By stacking a bilayer selector with NiO_(x)based resistive random-access memory,the leakage and programming currents of the device could be significantly decreased.For the crossbar array configuration,we performed equivalent circuit analysis of a one-selector oneresistor(1S1R) devices and estimated the optimal array size to demonstrate the applicability of the proposed structure.The maximum acceptable crossbar array size of the 1S1R device with the Ag/GST/HfO_(x)/Pt/Ti/NiO_(x)/Pt structure was 5.29×10^(14)(N^(2),N=2.3×10^(7)).
基金Project(51074105)supported by the National Natural Science Foundation of ChinaProjects(08DZ1130100,10520706400)supported by the Science and Technology Commission of Shanghai Municipality,ChinaProject(2007CB613606)supported by the National Basic Research Program of China
文摘The single crystal of nickel-base super alloy is widely used for making turbine blades.The microstructure of the alloy,especially the deviation of preferred orientation of single crystal,possesses the most important effects on the mechanical properties of the blades.In this study,the single crystal ingot and blade of DZ417G alloy are prepared by means of the spiral crystal selector as well as the directional solidification method,and the effect of the parameters(i.e.,the shape of samples,the withdrawal rate)and the structure of the spiral crystal selector on the formation of single crystal and the crystal orientation are investigated.This method can prepare not only the single crystal ingot with simple shape but also the single crystal blades with the complex shape,the simple with rod-shape can form the single crystal easily with a relatively fast withdrawal rate,but the blade with complex shape requires much slower withdrawal rate to form single crystal.The length of the crystal selector almost has no effect on the crystal orientation.However,the angle of selector plays an obvious role on the orientation;the selector with a smaller angle can effectively reduce the deviation of preferred orientation;the appropriate angle of selector to obtain optimal orientation is found to be around30°and the deviation of preferred orientation is about30°for this selector.
基金supported by the STI 2030—Major Projects(Grant No.2021ZD0201201)National Natural Science Foundation of China(Grant No.92064012)Hubei Province Postdoctoral Innovation Research Program(Grant No.0106182103)。
文摘With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of data generated from the devices challenges the AIoT systems from information collection,storage,processing and communication.In the review,we introduce volatile threshold switching memristors,which can be roughly classified into three types:metallic conductive filament-based TS devices,amorphous chalcogenide-based ovonic threshold switching devices,and metal-insulator transition based TS devices.They play important roles in high-density storage,energy efficient computing and hardware security for AIoT systems.Firstly,a brief introduction is exhibited to describe the categories(materials and characteristics)of volatile TS devices.And then,switching mechanisms of the three types of TS devices are discussed and systematically summarized.After that,attention is focused on the applications in 3D cross-point memory technology with high storage-density,efficient neuromorphic computing,hardware security(true random number generators and physical unclonable functions),and others(steep subthreshold slope transistor,logic devices,etc.).Finally,the major challenges and future outlook of volatile threshold switching memristors are presented.
文摘Six new kinds of amino acid derived β-cyclodextrins were synthesized to improve their water solubility and chiral separation properties. They are heptakis{2,6-di-O-[3-L-(1-isopropyl carboxyl methyl amino)-2-(hydroxy) propyl]}-β-cyclodextrin (i.e. L-Val-β-CD), heptakis{2,6-di-O-[3-L-(1-benzyl carboxyl methyl amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Phe-β-CD), heptakis{2,6-di-O-[3-(D, L-1-benzyl carboxyl methyl amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. D,L-Phe-β-CD), heptakis{2,6-di-O-[3-(L-1-hydroxymethyl carboxyl methyl amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Ser-β-CD), heptakis{2,6-di-O-[3-(L-1-carboxylmethyl carboxyl methyl amino)- 2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Asp-β-CD), heptakis{2,6-di-O-[3-(L-2-carboxyl tetramethylene amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Pro-β-CD). Their chemical structures were certified using FTIR and ()~1H NMR. Except for L-Phe-β-CD and D,L-Phe-β-CD, that are in soluble in water, the other amino acid derived β-CDs all have good water solubility. D,L-tyrosine and promethazine were baselinely separated by L-Val-β-CD in capillary electrophoresis.