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高维数据变量选择方法综述 被引量:37
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作者 曾津 周建军 《数理统计与管理》 CSSCI 北大核心 2017年第4期678-692,共15页
变量选择是统计学知识结构中不可或缺的一部分。本文归纳梳理了近二十年多来的变量选择方法,着重介绍了处理高维数据以及超高维数据的变量选择方法。最后我们通过一个实例比较了不同变量选择方法的差异性。
关键词 变量选择 Dantzig selector Lasso SCAD SIS
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Modes of Grain Selection in Spiral Selector during Directional Solidification of Nickel-base Superalloys 被引量:11
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作者 Xiangbin Meng Qi Lu +6 位作者 Jinguo Li Tao Jin Xiaofeng Sun Jun Zhang ZhongqiangChen Yanhui Wang Zhuangqi Hu 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2012年第3期214-220,共7页
The modes of grain selection in spiral selector were investigated by both a ProCAST simulation and experimental confirmation.The results show that the efficiency of grain selection in starter block is associated with ... The modes of grain selection in spiral selector were investigated by both a ProCAST simulation and experimental confirmation.The results show that the efficiency of grain selection in starter block is associated with the geometry shape.At the early stage of grain selection,the optimization of grain orientation is dominated by competitive grain growth,but the optimization of grain orientation in starter block is gradually dominated by geometry shape at the later stage of grain selection.Besides,the spiral part could also optimize the orientation of the selected single crystal when the initial angle is large enough,and the single crystal selection in spiral parts with different pitch lengths and initial angles is dominated by different modes.The simulation results agree well with experimental ones. 展开更多
关键词 Ni-base single crystal superalloys Competitive grain growth Geometry shape Directional solidification Spiral selector
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阻变存储器研究进展 被引量:13
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作者 龙世兵 刘琦 +1 位作者 吕杭炳 刘明 《中国科学:物理学、力学、天文学》 CSCD 北大核心 2016年第10期138-164,共27页
阻变存储器(Resistive Random Access Memory,RRAM)是最具应用前景的下一代非易失性存储器之一,与传统浮栅闪存相比在器件结构、速度、可微缩性、三维集成潜力等方面都具有明显的优势,本文对RRAM技术进行了综述.首先简单介绍了阻变存储... 阻变存储器(Resistive Random Access Memory,RRAM)是最具应用前景的下一代非易失性存储器之一,与传统浮栅闪存相比在器件结构、速度、可微缩性、三维集成潜力等方面都具有明显的优势,本文对RRAM技术进行了综述.首先简单介绍了阻变存储器的工作原理、技术优势、发展历程和面临的基础科学问题.然后深入总结了RRAM的材料体系,包括固态电解质、多元金属氧化物、二元金属氧化物3类传统的阻变介质材料,总结了纳米线、二维材料等低维纳米材料在RRAM运用方面的近期研究进展,分析了绝缘/导电的低维材料分别用作阻变介质、平面电极层/纳米电极/侧边电极、界面插层所带来的微缩性、阻变性能和稳定性等的改善效果.总结和分析了细丝型电阻转变的3类物理机制:热化学机制(Thermochemical Mechanism,TCM)、电化学金属化(Electrochemical Metallization,ECM)机制、化合价变化机制(Valence Change Mechanism,VCM),详细分析了3种机制的SET/RESET转变原理和基本电学特性、透射电镜观测关键实验验证、对阻变机制的认识发展过程等.在阻变机制分析的基础上,接着阐述了RRAM电阻转变过程中由于纳米尺度下材料微观结构和能带结构的变化导致的一些新奇的物理现象,包括量子效应、磁电效应、光电效应等.最后针对RRAM实现应用的关键——集成技术,总结分析了存储阵列架构、二维/三维集成等关键问题及其研究进展. 展开更多
关键词 阻变存储器 阻变材料 阻变机制 导电细丝 三维集成 选通管
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影响电脑横机选针器选针可靠性的几个因素 被引量:9
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作者 张一平 吕旭东 《郑州纺织工学院学报》 2001年第3期43-45,共3页
通过对电脑横机选针器的选用及参数确定 ,着重讨论了电脑横机选针器对选针可靠性的影响 ,提出应选择结构稳定、参数适用、控制方式合理的选针器 ,以便准确、可靠地选针 .
关键词 电脑横机 选针可靠性 选针器 针织
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活性污泥法异常现象的探讨与控制 被引量:7
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作者 陶贵青 杨艳萍 殷志祥 《辽宁工程技术大学学报(自然科学版)》 CAS 北大核心 2002年第5期681-683,共3页
针对国内外活性污泥法中出现的异常现象,对于低负荷、低溶解氧和高负荷两种情况,就污泥膨胀现象与污水水质及工艺运行条件的密切关系进行分析,结合相关理论和工程实践,对污泥膨胀现象采取相应措施,如药剂法、环境调控、代谢控制及补充... 针对国内外活性污泥法中出现的异常现象,对于低负荷、低溶解氧和高负荷两种情况,就污泥膨胀现象与污水水质及工艺运行条件的密切关系进行分析,结合相关理论和工程实践,对污泥膨胀现象采取相应措施,如药剂法、环境调控、代谢控制及补充元素和选择器等,使污泥异常现象得到有效的控制。可供从事设计和操作人员参考。 展开更多
关键词 活性污泥法 异常现象 污泥膨胀 菌胶团 丝状菌 选择器 污水生物处理 控制措施
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高性能激光单脉冲选择器 被引量:6
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作者 莽燕萍 欧阳斌 +2 位作者 张秉钧 康玉英 林礼煌 《中国激光》 EI CAS CSCD 北大核心 1992年第8期561-565,共5页
本文论述了采用三种类型雪崩晶体管驱动器的高性能激光单脉冲选择器的工作原理及设计思想,并分析了它们各自的特点。这类激光单脉冲选择器的抖动<1ns,寿命>10~7次,延迟时间约为20ns,单脉冲选出率为100%,信噪比>10~3。
关键词 选择器 单脉冲 锁模激光器 原理
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Synthesis and Characterisation of Water-Soluble Carboxymethyl-Cyclodextrin Polymer as Capillary Electrophoresis Chiral Selector 被引量:3
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作者 Xue Yan SHI Rui Fang FAN +2 位作者 Yue Qin ZHANG Jun Ling GU Ruo Nong FU( College of Chemical Engineering and Material Science Beijing Institute of Technology, Beijing 100081) 《Chinese Chemical Letters》 SCIE CAS CSCD 2000年第1期69-70,共2页
The water-soluble carboxymethyl-cyclodextrin polymer (CM-CD polymer) was synthesized and used as capillary electrophoresis chiral selector. Verrapamil and thiopentorusodium were well separated using CM-CD polymer as c... The water-soluble carboxymethyl-cyclodextrin polymer (CM-CD polymer) was synthesized and used as capillary electrophoresis chiral selector. Verrapamil and thiopentorusodium were well separated using CM-CD polymer as chiral selector. 展开更多
关键词 Carboxymethyl-cyclodextrin polymer capillary electrophoresis chiral selector.
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煤气化装置氧煤比控制策略浅析 被引量:6
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作者 董清锋 陈菲 《自动化仪表》 CAS 2018年第6期78-80,共3页
煤气化是煤、O_2、水或蒸汽在加压条件下进行复杂化学反应,生成以CO和H_2为主的合成气。合成气中,CO和H_2含量是通过控制O_2和煤的进料量比例来实现的。氧煤比控制方案是煤气化装置安全、稳定运行控制方案的核心,氧煤比控制的精确性对... 煤气化是煤、O_2、水或蒸汽在加压条件下进行复杂化学反应,生成以CO和H_2为主的合成气。合成气中,CO和H_2含量是通过控制O_2和煤的进料量比例来实现的。氧煤比控制方案是煤气化装置安全、稳定运行控制方案的核心,氧煤比控制的精确性对碳的转化率、合成气组分、气化炉温度等关键工艺指标有着直接的影响。不同的工艺路线、气化炉炉型、进料方式有不同的氧煤比控制策略。通过对国内部分煤化工装置氧煤比控制方案的研究,阐述了不同装置的控制方案,并对比了优缺点。结果表明,氧煤比控制策略有着不同的适用性,需根据不同的工艺条件进行优化。该分析能为煤气化装置工程技术人员的实际应用提供借鉴。 展开更多
关键词 氧煤比 控制策略 气力输送 串级 耦合 限幅器 选择器
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Deep machine learning unravels the structural origin of mid-gap states in chalcogenide glass for high-density memory integration 被引量:5
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作者 Meng Xu Ming Xu Xiangshui Miao 《InfoMat》 SCIE CAS 2022年第6期109-120,共12页
The recent development of three-dimensional semiconductor integration technology demands a key component-the ovonic threshold switching(OTS)selector to suppress the current leakage in the high-density memory chips.Yet... The recent development of three-dimensional semiconductor integration technology demands a key component-the ovonic threshold switching(OTS)selector to suppress the current leakage in the high-density memory chips.Yet,the unsatisfactory performance of existing OTS materials becomes the bottleneck of the industrial advancement.The sluggish development of OTS materials,which are usually made from chalcogenide glass,should be largely attributed to the insufficient understanding of the electronic structure in these materials,despite of intensive research in the past decade.Due to the heavy first-principles computation on disordered systems,a universal theory to explain the origin of mid-gap states(MGS),which are the key feature leading to the OTS behavior,is still lacking.To avoid the formidable computational tasks,we adopt machine learning method to understand and predict MGS in typical OTS materials.We build hundreds of chalcogenide glass models and collect major structural features from both short-range order(SRO)and medium-range order(MRO)of the amorphous cells.After training the artificial neural network using these features,the accuracy has reached~95%when it recognizes MGS in new glass.By analyzing the synaptic weights of the input structural features,we discover that the bonding and coordination environments from SRO and particularly MRO are closely related to MGS.The trained model could be used in many other OTS chalcogenides after minor modification.The intelligent machine learning allows us to understand the OTS mechanism from vast amount of structural data without heavy computational tasks,providing a new strategy to design functional amorphous materials from first principles. 展开更多
关键词 chalcogenide glass machine learning mid-gap states ovonic threshold switching phasechange memory selector
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Compressed Data Separation via ℓ_(q)-Split Analysis with ℓ_(∞)-Constraint
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作者 Ming Yang Gu Song Li Jun Hong Lin 《Acta Mathematica Sinica,English Series》 SCIE CSCD 2024年第7期1655-1673,共19页
In this paper,we study compressed data separation(CDS)problem,i.e.,sparse data separation from a few linear random measurements.We propose the nonconvex ℓ_(q)-split analysis with ℓ_(∞)-constraint and 0<q≤1.We cal... In this paper,we study compressed data separation(CDS)problem,i.e.,sparse data separation from a few linear random measurements.We propose the nonconvex ℓ_(q)-split analysis with ℓ_(∞)-constraint and 0<q≤1.We call the algorithm ℓ_(q)-split-analysis Dantzig selector(ℓ_(q)-split-analysis DS).We show that the two distinct subcomponents that are approximately sparse in terms of two different dictionaries could be stably approximated via the ℓ_(q)-split-analysis DS,provided that the measurement matrix satisfies either a classical D-RIP(Restricted Isometry Property with respect to Dictionaries and ℓ_(2) norm)or a relatively new(D,q)-RIP(RIP with respect to Dictionaries and ℓ_(q)-quasi norm)condition and the two different dictionaries satisfy a mutual coherence condition between them.For the Gaussian random measurements,the measurement number needed for the(D,q)-RIP condition is far less than those needed for the D-RIP condition and the(D,1)-RIP condition when q is small enough. 展开更多
关键词 Data separation ℓ_(q)-split analysis Dantzig selector FRAMES restricted isometry property compressed sensing
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城市污水处理厂的污泥膨胀研究分析 被引量:6
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作者 陈珺 《给水排水》 CSCD 北大核心 2009年第12期31-34,共4页
通过对北京市大型城市污水处理厂优势丝状菌鉴定及温度、生物选择器和溶解氧对污泥膨胀影响的研究分析,发现脱氮除磷工艺普遍会在冬季发生由Microthrix parvicella菌引起的污泥膨胀。研究了温度与SVI的变化规律,分析了出水亚硝酸氮和SV... 通过对北京市大型城市污水处理厂优势丝状菌鉴定及温度、生物选择器和溶解氧对污泥膨胀影响的研究分析,发现脱氮除磷工艺普遍会在冬季发生由Microthrix parvicella菌引起的污泥膨胀。研究了温度与SVI的变化规律,分析了出水亚硝酸氮和SVI的相关性,并对生物选择器和不同DO浓度对污泥膨胀的影响进行了分析。 展开更多
关键词 污水处理厂 污泥膨胀 生物脱氮 温度 溶解氧 生物选择器 亚硝酸氮
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Microwave photonic sideband selector based on thin-film lithium niobate platform
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作者 丁跃迪 尚成林 +4 位作者 于文琦 马向 李少波 曾成 夏金松 《Chinese Optics Letters》 SCIE EI CAS CSCD 2024年第3期55-59,共5页
We propose and demonstrate an integrated microwave photonic sideband selector based on the thin-film lithium niobate(TFLN)platform by integrating an electro-optic Mach-Zehnder modulator(MZM)and a thermo-optic tunable ... We propose and demonstrate an integrated microwave photonic sideband selector based on the thin-film lithium niobate(TFLN)platform by integrating an electro-optic Mach-Zehnder modulator(MZM)and a thermo-optic tunable flat-top microring filter.The sideband selector has two functions:electro-optic modulation of wideband RF signal and sideband selection.The microwave photonic sideband selector supports processing RF signals up to 40 GHz,with undesired sidebands effectively suppressed by more than 25 d B.The demonstrated device shows great potential for TFLN integrated technology in microwave photonic applications,such as mixing and frequency measurement. 展开更多
关键词 lithium niobate microwave photonics sideband selector
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Chalcogenide Ovonic Threshold Switching Selector
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作者 Zihao Zhao Sergiu Clima +4 位作者 Daniele Garbin Robin Degraeve Geoffrey Pourtois Zhitang Song Min Zhu 《Nano-Micro Letters》 SCIE EI CAS CSCD 2024年第5期1-40,共40页
Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimen... Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing. 展开更多
关键词 Non-volatile memory Ovonic threshold switch(OTS) CHALCOGENIDE selector
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云原生存储无损扩容算法研究
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作者 蔡旭辉 董晓荔 +2 位作者 丁蔚然 陈曦 郑卿 《数字通信世界》 2024年第5期12-14,35,共4页
分布式存储是多云数据中心的重要产品。云原生应用迭代周期缩短,对存储的容量和调整速度也有了更高的要求。目前,云原生存储因其自身架构的高可扩展性、健壮性和高性能等优点已占领主流市场,但集群扩缩容导致存储池长期处于数据迁移状态... 分布式存储是多云数据中心的重要产品。云原生应用迭代周期缩短,对存储的容量和调整速度也有了更高的要求。目前,云原生存储因其自身架构的高可扩展性、健壮性和高性能等优点已占领主流市场,但集群扩缩容导致存储池长期处于数据迁移状态,引发了性能耗损高、集群表现不稳定等影响业务体验的问题。针对这些问题,该文提出一种优化算法,增加逻辑标签机制动态映射存储路径到物理介质,使得增量数据在扩容的存储介质落盘,避免大批量的数据迁移,让云原生存储可以在扩缩容场景下降低性能损耗和集群不稳定的概率。 展开更多
关键词 CRUSH 选择器 云原生存储
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Ag-GST/HfO_(x)-based unidirectional threshold switching selector with low leakage current and threshold voltage distribution for high-density cross-point arrays
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作者 Kyoung-Joung Yoo Dae-Yun Kang +4 位作者 Nahyun Kim Ho-Jin Lee Ta-Hyeong Kim Taeho Kim Tae Geun Kim 《Rare Metals》 SCIE EI CAS CSCD 2024年第1期280-288,共9页
The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple structure.However,these devices are uns... The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple structure.However,these devices are unsuitable for cross-point architectures because of the difficulty in controlling the random filament formation that results in large fluctuations in the threshold voltage during operation.In this study,we investigated the unidirectional threshold transition characteristics associated with an Ag/GST/HfO_(x)/Pt-based bilayer selector and demonstrated the occurrence of a low leakage current(<1×10^(-11) A) and low distribution of the threshold voltage(Δ0.11 V).The bilayer structure could control the filament formation in the intermediate state through the insertion of an HfO_(x) tunneling barrier.By stacking a bilayer selector with NiO_(x)based resistive random-access memory,the leakage and programming currents of the device could be significantly decreased.For the crossbar array configuration,we performed equivalent circuit analysis of a one-selector oneresistor(1S1R) devices and estimated the optimal array size to demonstrate the applicability of the proposed structure.The maximum acceptable crossbar array size of the 1S1R device with the Ag/GST/HfO_(x)/Pt/Ti/NiO_(x)/Pt structure was 5.29×10^(14)(N^(2),N=2.3×10^(7)). 展开更多
关键词 selector device Tunneling barrier Threshold switching Sputtering 1S1R Cross-point array
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双边沿触发计数器的设计和应用 被引量:4
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作者 谢建华 叶卫东 韩跃峰 《兵工自动化》 2006年第4期71-72,共2页
双边沿触发计数器由偶数、奇数加法计数器及数据选择器组成。两个加法计数器在时钟信号作用下并行工作,交替处于计数和保持状态。数据选择器则将两个计数器中处于保持状态的奇偶数据交替输出,实现双边沿触发加法计数器的功能。该触发计... 双边沿触发计数器由偶数、奇数加法计数器及数据选择器组成。两个加法计数器在时钟信号作用下并行工作,交替处于计数和保持状态。数据选择器则将两个计数器中处于保持状态的奇偶数据交替输出,实现双边沿触发加法计数器的功能。该触发计数器采用Verilog语言设计和软件仿真,可用于计数、定时和分频三种情况。 展开更多
关键词 计数器 双边沿触发 并行处理 选择器
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Effects of directional solidification parameters and crystal selector on microstructure of single crystal of Ni-base superalloys 被引量:5
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作者 LI Chong-he WEI Chao +3 位作者 ZHANG Ru-lin WANG Hong-bin REN Zhong-ming LU Xiong-gang 《Journal of Central South University》 SCIE EI CAS CSCD 2018年第1期1-8,共8页
The single crystal of nickel-base super alloy is widely used for making turbine blades.The microstructure of the alloy,especially the deviation of preferred orientation of single crystal,possesses the most important e... The single crystal of nickel-base super alloy is widely used for making turbine blades.The microstructure of the alloy,especially the deviation of preferred orientation of single crystal,possesses the most important effects on the mechanical properties of the blades.In this study,the single crystal ingot and blade of DZ417G alloy are prepared by means of the spiral crystal selector as well as the directional solidification method,and the effect of the parameters(i.e.,the shape of samples,the withdrawal rate)and the structure of the spiral crystal selector on the formation of single crystal and the crystal orientation are investigated.This method can prepare not only the single crystal ingot with simple shape but also the single crystal blades with the complex shape,the simple with rod-shape can form the single crystal easily with a relatively fast withdrawal rate,but the blade with complex shape requires much slower withdrawal rate to form single crystal.The length of the crystal selector almost has no effect on the crystal orientation.However,the angle of selector plays an obvious role on the orientation;the selector with a smaller angle can effectively reduce the deviation of preferred orientation;the appropriate angle of selector to obtain optimal orientation is found to be around30°and the deviation of preferred orientation is about30°for this selector. 展开更多
关键词 DZ417G alloy high rapid solidification crystal orientation single crystal superalloy spiral grain selector
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小电流接地选线装置的原理及应用 被引量:3
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作者 段华炜 王为民 刘秀梅 《科技情报开发与经济》 2004年第5期264-265,共2页
介绍了小电流接地系统的优点,就如何正确选择故障线路进行了分析,提出了零序电流的采集原则及方法,并对零序电流互感器的正确使用做了说明。
关键词 零序电流 接地系统 选线装置
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Volatile threshold switching memristor:An emerging enabler in the AIoT era 被引量:1
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作者 Wenbin Zuo Qihang Zhu +5 位作者 Yuyang Fu Yu Zhang Tianqing Wan Yi Li Ming Xu Xiangshui Miao 《Journal of Semiconductors》 EI CAS CSCD 2023年第5期122-144,共23页
With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of... With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of data generated from the devices challenges the AIoT systems from information collection,storage,processing and communication.In the review,we introduce volatile threshold switching memristors,which can be roughly classified into three types:metallic conductive filament-based TS devices,amorphous chalcogenide-based ovonic threshold switching devices,and metal-insulator transition based TS devices.They play important roles in high-density storage,energy efficient computing and hardware security for AIoT systems.Firstly,a brief introduction is exhibited to describe the categories(materials and characteristics)of volatile TS devices.And then,switching mechanisms of the three types of TS devices are discussed and systematically summarized.After that,attention is focused on the applications in 3D cross-point memory technology with high storage-density,efficient neuromorphic computing,hardware security(true random number generators and physical unclonable functions),and others(steep subthreshold slope transistor,logic devices,etc.).Finally,the major challenges and future outlook of volatile threshold switching memristors are presented. 展开更多
关键词 AIoT threshold switching MEMRISTOR selector neuromorphic computing hardware security
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Synthesis of Amino Acid Derived β-Cyclodextrins Used in Chiral Separation by Capillary Electrophoresis 被引量:1
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作者 戴荣继 佟斌 +4 位作者 魏征 顾峻岭 邓玉林 李明愉 傅若农 《Journal of Beijing Institute of Technology》 EI CAS 2004年第2期206-209,共4页
Six new kinds of amino acid derived β-cyclodextrins were synthesized to improve their water solubility and chiral separation properties. They are heptakis{2,6-di-O-[3-L-(1-isopropyl carboxyl methyl amino)-2-(hydroxy)... Six new kinds of amino acid derived β-cyclodextrins were synthesized to improve their water solubility and chiral separation properties. They are heptakis{2,6-di-O-[3-L-(1-isopropyl carboxyl methyl amino)-2-(hydroxy) propyl]}-β-cyclodextrin (i.e. L-Val-β-CD), heptakis{2,6-di-O-[3-L-(1-benzyl carboxyl methyl amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Phe-β-CD), heptakis{2,6-di-O-[3-(D, L-1-benzyl carboxyl methyl amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. D,L-Phe-β-CD), heptakis{2,6-di-O-[3-(L-1-hydroxymethyl carboxyl methyl amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Ser-β-CD), heptakis{2,6-di-O-[3-(L-1-carboxylmethyl carboxyl methyl amino)- 2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Asp-β-CD), heptakis{2,6-di-O-[3-(L-2-carboxyl tetramethylene amino)-2-hydroxy propyl]}-β-cyclodextrin (i.e. L-Pro-β-CD). Their chemical structures were certified using FTIR and ()~1H NMR. Except for L-Phe-β-CD and D,L-Phe-β-CD, that are in soluble in water, the other amino acid derived β-CDs all have good water solubility. D,L-tyrosine and promethazine were baselinely separated by L-Val-β-CD in capillary electrophoresis. 展开更多
关键词 cyclodextrin derivatives capillary electrophoresis chiral selector
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