Rational design and construction of chiral-achiral hybrid structures are of great importance to realize the multifunctional complex chiral structures toward emerging technological applications. However, significant ch...Rational design and construction of chiral-achiral hybrid structures are of great importance to realize the multifunctional complex chiral structures toward emerging technological applications. However, significant challenges remain due to the lack of fine control over the heterostructure. Here, we have developed a general bottom-up synthetic strategy for the site-selective growth of Cu nanodomains on intrinsically chiral Au nanocrystals. Chiral AuCu heterostructures with three distinct architectures were achieved by controlling the overgrowth of Cu nanodomains in a site-specific manner. The geometry-dependent plasmonic chirality of the heterostructures was demonstrated experimentally by circular dichroism spectroscopy and theoretically through finite-difference time-domain simulations. The site-specific geometric control of chiral AuCu heterostructures was also extended to employ anisotropic chiral Au nanoplates and nanorods as the building blocks. By virtue of the galvanic replacement reactions between metal ions and Cu atoms, chiral heterostructures with increasing architectural complexity and compositional diversity can be further achieved. The current work not only opens up a promising strategy to synthesize complex chiral hybrid nanostructures but also provides an important knowledge framework that guides the rational design of multifunctional chiral hybrid nanostructures toward chiroptical applications.展开更多
A high crystalline quality of SiGe fin with an Si-rich composition area using the replacement fin processing is systematically demonstrated in this paper.The fin replacement process based on a standard FinFET process ...A high crystalline quality of SiGe fin with an Si-rich composition area using the replacement fin processing is systematically demonstrated in this paper.The fin replacement process based on a standard FinFET process is developed.A width of less than 20-nm SiGe fin without obvious defect impact both in the direction across the fin and in the direction along the fin is verified by using the high angle annular dark field scanning transmission electron microscopy and the scanning moiréfringe imaging technique.Moreover,the SiGe composition is inhomogenous in the width of the fin.This is induced by the formation of 111 facets.Due to the atomic density of the 111 facets being higher,the epitaxial growth in the direction perpendicular to these facets is slower than in the direction perpendicular to 001.The Ge incorporation is then higher on the 111 facets than on the 001 facets.So,an Si-rich area is observed in the central area and on the bottom of SiGe fin.展开更多
基金supported by the National Natural Science Foundation of China (22174104 to Q.Z.)the support of the Hubei Provincial Natural Science Foundation of China (2022CFB627)the Fundamental Research Funds for the Central Universities (20422022kf1039)。
文摘Rational design and construction of chiral-achiral hybrid structures are of great importance to realize the multifunctional complex chiral structures toward emerging technological applications. However, significant challenges remain due to the lack of fine control over the heterostructure. Here, we have developed a general bottom-up synthetic strategy for the site-selective growth of Cu nanodomains on intrinsically chiral Au nanocrystals. Chiral AuCu heterostructures with three distinct architectures were achieved by controlling the overgrowth of Cu nanodomains in a site-specific manner. The geometry-dependent plasmonic chirality of the heterostructures was demonstrated experimentally by circular dichroism spectroscopy and theoretically through finite-difference time-domain simulations. The site-specific geometric control of chiral AuCu heterostructures was also extended to employ anisotropic chiral Au nanoplates and nanorods as the building blocks. By virtue of the galvanic replacement reactions between metal ions and Cu atoms, chiral heterostructures with increasing architectural complexity and compositional diversity can be further achieved. The current work not only opens up a promising strategy to synthesize complex chiral hybrid nanostructures but also provides an important knowledge framework that guides the rational design of multifunctional chiral hybrid nanostructures toward chiroptical applications.
基金the Beijing Municipal Natural Science Foundation,China(Grant No.4202078)the National Key Project of Science and Technology of China(Grant No.2017ZX02315001-002).
文摘A high crystalline quality of SiGe fin with an Si-rich composition area using the replacement fin processing is systematically demonstrated in this paper.The fin replacement process based on a standard FinFET process is developed.A width of less than 20-nm SiGe fin without obvious defect impact both in the direction across the fin and in the direction along the fin is verified by using the high angle annular dark field scanning transmission electron microscopy and the scanning moiréfringe imaging technique.Moreover,the SiGe composition is inhomogenous in the width of the fin.This is induced by the formation of 111 facets.Due to the atomic density of the 111 facets being higher,the epitaxial growth in the direction perpendicular to these facets is slower than in the direction perpendicular to 001.The Ge incorporation is then higher on the 111 facets than on the 001 facets.So,an Si-rich area is observed in the central area and on the bottom of SiGe fin.
