The distribution characteristics of Er^3＋ ions doped in the oxyfluoride glass ceramics containing LaF3 nanocrystals heat-treated at 650 ℃ for different durations were investigated. The results of the integral absor...The distribution characteristics of Er^3＋ ions doped in the oxyfluoride glass ceramics containing LaF3 nanocrystals heat-treated at 650 ℃ for different durations were investigated. The results of the integral absorption cross-section analysis demonstrated that the partition fraction of Er^3＋ in LaF3 nanocrystals increases with prolonging of heating time, The anomalous phenomena of Er^3＋ emissions in the up-and the down-conversion fluorescence spectra are well explained based on the calculated results.展开更多
A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic（IPV） effect for silicon solar cells doped with indium. The photovoltaic parameters（short-circuit...A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic（IPV） effect for silicon solar cells doped with indium. The photovoltaic parameters（short-circuit current density, opencircuit voltage, and conversion efficiency） of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is 10^-20cm^2, the conversion efficiencyη of the IPV cell always has a negative gain（△η 0） if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small（large） hole photoemission cross section and large（small） electron photoemission cross section,whose energy levels are near the valence（or conduction） band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections.展开更多
基金the National Natural Science Foundation of China (No. 50672098)the Project of Nano-molecular Functional Materials of Fujian Province (2005HZ01-1)
文摘The distribution characteristics of Er^3＋ ions doped in the oxyfluoride glass ceramics containing LaF3 nanocrystals heat-treated at 650 ℃ for different durations were investigated. The results of the integral absorption cross-section analysis demonstrated that the partition fraction of Er^3＋ in LaF3 nanocrystals increases with prolonging of heating time, The anomalous phenomena of Er^3＋ emissions in the up-and the down-conversion fluorescence spectra are well explained based on the calculated results.
基金supported by the National Natural Science Foundation of China(Grant Nos.61464007,61306084,11664025,and 51561022)the Postdoctoral Science Foundation of Jiangxi Province of China(Grant Nos.2014KY32,2013RC08,and 2015KY12)+1 种基金the Natural Science Foundation of Jiangxi Province of China(Grant Nos.20151BAB207055 and 20161BAB201012)the Postdoctoral Science Foundation of China(Grant No.2016M592115)
文摘A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic（IPV） effect for silicon solar cells doped with indium. The photovoltaic parameters（short-circuit current density, opencircuit voltage, and conversion efficiency） of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is 10^-20cm^2, the conversion efficiencyη of the IPV cell always has a negative gain（△η 0） if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small（large） hole photoemission cross section and large（small） electron photoemission cross section,whose energy levels are near the valence（or conduction） band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections.
