This paper presents the design and simulation of several fixed-tuned sub-harmonic mixers cover frequencies from 110 GH to 130 GHz, 215 GH to 235 GHz, 310 GH to 350 GHz, and 400 GH to 440 GHz. Among them, 120 GHz, 225 ...This paper presents the design and simulation of several fixed-tuned sub-harmonic mixers cover frequencies from 110 GH to 130 GHz, 215 GH to 235 GHz, 310 GH to 350 GHz, and 400 GH to 440 GHz. Among them, 120 GHz, 225 GHz, 330 GHz subharmonic mixers are designed with flip-chipped planar schottky diode mounted onto a suspended quartz-based substrate, the 225 GHz and 425 GHz subharmonic mixers are GaAs membrane integrated, and the 115 GHz subharmonic mixer has been fabricated and tested already.展开更多
This work demonstrates high-performance and current crowding-free InGaN/GaN light-emitting diodes （LEDs） using an electrically-reverse-connected Schottky diode （SD） and an Mg-delta （δ） doped layer. Possible mec...This work demonstrates high-performance and current crowding-free InGaN/GaN light-emitting diodes （LEDs） using an electrically-reverse-connected Schottky diode （SD） and an Mg-delta （δ） doped layer. Possible mechanism of carrier transport at the interface between transparent conducting electrode （TCE） and p-GaN with the δ-doped layer is also investigated. Results show that the LED with the SD and Mg delta （δ）-doping layer yields lower series resistance, higher output power, and lower reverse leakage current compared to normal LEDs. In addition, unlike the normal LED, there is no occurrence for the current crowding effect in the proposed LED even at high current density of 380mA/cm2. These remarkable behaviours clearly indicate that the use of the SD and δ- doping in the p-GaN region is very promising to achieve high-brightness and excellent-reliability GaN-based LEDs.展开更多
基金supported by the National Natural Science Foundation of China under Grant No.61301051
文摘This paper presents the design and simulation of several fixed-tuned sub-harmonic mixers cover frequencies from 110 GH to 130 GHz, 215 GH to 235 GHz, 310 GH to 350 GHz, and 400 GH to 440 GHz. Among them, 120 GHz, 225 GHz, 330 GHz subharmonic mixers are designed with flip-chipped planar schottky diode mounted onto a suspended quartz-based substrate, the 225 GHz and 425 GHz subharmonic mixers are GaAs membrane integrated, and the 115 GHz subharmonic mixer has been fabricated and tested already.
文摘This work demonstrates high-performance and current crowding-free InGaN/GaN light-emitting diodes （LEDs） using an electrically-reverse-connected Schottky diode （SD） and an Mg-delta （δ） doped layer. Possible mechanism of carrier transport at the interface between transparent conducting electrode （TCE） and p-GaN with the δ-doped layer is also investigated. Results show that the LED with the SD and Mg delta （δ）-doping layer yields lower series resistance, higher output power, and lower reverse leakage current compared to normal LEDs. In addition, unlike the normal LED, there is no occurrence for the current crowding effect in the proposed LED even at high current density of 380mA/cm2. These remarkable behaviours clearly indicate that the use of the SD and δ- doping in the p-GaN region is very promising to achieve high-brightness and excellent-reliability GaN-based LEDs.
