We fabricate p-type conductive ZnO thin films on quartz glass substrates by codoping of In-N using radio frequency magnetron sputtering technique together with the direct implantation of acceptor dopants （nitrogen）....We fabricate p-type conductive ZnO thin films on quartz glass substrates by codoping of In-N using radio frequency magnetron sputtering technique together with the direct implantation of acceptor dopants （nitrogen）. The effects of thermal annealing on the structure and electrical properties of the ZnO films are investigated by an x-ray diffractometer （XRD） and a Hall measurement system. It is found that the best p-type ZnO film subjected to annealed exhibits excellent electrical properties with a hole concentration of 1.22 × 10^18 cm^-3, a Hall mobility of 2.19 cm^2 V^-1 s^- 1, and a low resistivity of about 2.33 Ωcm, indicating that the presence of In may facilitates the incorporation of N into ZnO thin films.展开更多
Room-temperature ferromagnetism was observed in （In0.95-xSnxFe0.05）203 （x = 0-0.09） films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into ...Room-temperature ferromagnetism was observed in （In0.95-xSnxFe0.05）203 （x = 0-0.09） films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In2O3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism.展开更多
Epitaxial ZnO films are grown on Al2O3 （0001） by the MOCVD method. These films are high quality wurtzite crystals with （0001） orientation. Big hexagonal crystallites （diameter from several decades to 100 μm） ar...Epitaxial ZnO films are grown on Al2O3 （0001） by the MOCVD method. These films are high quality wurtzite crystals with （0001） orientation. Big hexagonal crystallites （diameter from several decades to 100 μm） are found on the surface. Inside these crystallites, a stronger luminescence is observed compared with the plain area. Transmission electronic microscopy reveals that the film is thicker inside the hexagonal crystallites than the plain area, and some crystallites are not connected with each other and are slightly rotated with respect to their neighbours.展开更多
Defects in ZnO films grown by radio-frequency reactive magnetron sputtering under variable ratios between oxygen and argon gas have been investigated by using the monoenergetie positron beam technique. The dominate in...Defects in ZnO films grown by radio-frequency reactive magnetron sputtering under variable ratios between oxygen and argon gas have been investigated by using the monoenergetie positron beam technique. The dominate intrinsic defects in these ZnO samples are O vacancies （Vo） and Zn interstitials （Zni） when the oxygen fraction in the O2/Ar feed gas does not exceed 70% in the processing chamber. On the other hand, zinc vacancies are preponderant in the ZnO films fabricated in richer oxygen environment. The concentration of zinc vacancies increases with the increasing O2 fraction. For the oxygen fraction 85%, the number of zinc vacancies that could trap positrons will be smaller. It is speculated that some unknown defects could shield zinc vacancies. The concentration of zinc vacancies in the ZnO films varies with the oxygen fraction in the growth chamber, which is in agreement with the results of photolurninescence spectra.展开更多
Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389nm and 57Ohm are observed under forward bias. An unusual emission at 390ram appears under...Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389nm and 57Ohm are observed under forward bias. An unusual emission at 390ram appears under reverse bias, and is attributed to the recombination in the p-GaN side of the heterojunction. The yellow emission peaked at 57Ohm is suppressed under reverse bias. The light intensity exponentially depends on the reverse current. The emission under reverse bias is correlated to tunnelling carrier transport in the heterostructure. Our results also support that the well-known yellow band of GaN comes from the transitions between some near-conduction-band-edge states and deep localized acceptor states.展开更多
Identifying air-stable two-dimensional(2D)ferromagnetism with high Curie temperature(T_(c))is highly desirable for its potential applications in next-generation spintronics.However,most of the work reported so far mai...Identifying air-stable two-dimensional(2D)ferromagnetism with high Curie temperature(T_(c))is highly desirable for its potential applications in next-generation spintronics.However,most of the work reported so far mainly focuses on promoting one specific key factor of 2D ferromagnetism(T_(c)or air stability),rather than comprehensive promotion of both of them.Herein,ultrathin Cr_(1-x)Te crystals grown by chemical vapor deposition(CVD)show thickness-dependent T_(c)up to 285 K.The out-of-plane ferromagnetic order is well preserved down to atomically thin limit(2.0 nm),as evidenced by anomalous Hall effect observed in non-encapsulated samples.Besides,the CVD-grown Cr_(1-x)Te nanosheets present excellent ambient stability,with no apparent change in surface roughness or electrical transport properties after exposure to air for months.Our work provides an alternative platform for investigation of intrinsic 2D ferromagnetism and development of innovative spintronic devices.展开更多
基金Supported by the Natural Science Foundation of Chongqing City under Grant No AC4034, and Education Commission of Chongqing City under Grant No KJ050812.
文摘We fabricate p-type conductive ZnO thin films on quartz glass substrates by codoping of In-N using radio frequency magnetron sputtering technique together with the direct implantation of acceptor dopants （nitrogen）. The effects of thermal annealing on the structure and electrical properties of the ZnO films are investigated by an x-ray diffractometer （XRD） and a Hall measurement system. It is found that the best p-type ZnO film subjected to annealed exhibits excellent electrical properties with a hole concentration of 1.22 × 10^18 cm^-3, a Hall mobility of 2.19 cm^2 V^-1 s^- 1, and a low resistivity of about 2.33 Ωcm, indicating that the presence of In may facilitates the incorporation of N into ZnO thin films.
基金Project supported by the National Natural Science Foundation of China(No.11004149)the Seed Foundation of Tianiin University
文摘Room-temperature ferromagnetism was observed in （In0.95-xSnxFe0.05）203 （x = 0-0.09） films deposited by pulsed laser deposition. XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3 lattice. The carrier concentration in the films is obviously increased by the Sn-doping, while the ferromagnetic properties are rarely changed. We think that in our Fe-doped In2O3 films, the oxygen vacancy-related bound magnetic polaron model, rather than the carrier-mediated RKKY coupling, is the main mechanism for the observed ferromagnetism.
基金Supported by the National Natural Science Foundation of China under Grant No 10375004, and the Key Laboratory of Heavy Ion Physics, Ministry of Education of China.
文摘Epitaxial ZnO films are grown on Al2O3 （0001） by the MOCVD method. These films are high quality wurtzite crystals with （0001） orientation. Big hexagonal crystallites （diameter from several decades to 100 μm） are found on the surface. Inside these crystallites, a stronger luminescence is observed compared with the plain area. Transmission electronic microscopy reveals that the film is thicker inside the hexagonal crystallites than the plain area, and some crystallites are not connected with each other and are slightly rotated with respect to their neighbours.
基金Supported by the National Natural Science Foundation of China under No 10425072.
文摘Defects in ZnO films grown by radio-frequency reactive magnetron sputtering under variable ratios between oxygen and argon gas have been investigated by using the monoenergetie positron beam technique. The dominate intrinsic defects in these ZnO samples are O vacancies （Vo） and Zn interstitials （Zni） when the oxygen fraction in the O2/Ar feed gas does not exceed 70% in the processing chamber. On the other hand, zinc vacancies are preponderant in the ZnO films fabricated in richer oxygen environment. The concentration of zinc vacancies increases with the increasing O2 fraction. For the oxygen fraction 85%, the number of zinc vacancies that could trap positrons will be smaller. It is speculated that some unknown defects could shield zinc vacancies. The concentration of zinc vacancies in the ZnO films varies with the oxygen fraction in the growth chamber, which is in agreement with the results of photolurninescence spectra.
基金Supported by the National Natural Science Foundation under Grant Nos 60476044, 60376004 and 60021403, and the National Key Basic Research and Development Programme of China under Grant Nos 2002CB311903 and 2002CB613500.
文摘Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389nm and 57Ohm are observed under forward bias. An unusual emission at 390ram appears under reverse bias, and is attributed to the recombination in the p-GaN side of the heterojunction. The yellow emission peaked at 57Ohm is suppressed under reverse bias. The light intensity exponentially depends on the reverse current. The emission under reverse bias is correlated to tunnelling carrier transport in the heterostructure. Our results also support that the well-known yellow band of GaN comes from the transitions between some near-conduction-band-edge states and deep localized acceptor states.
基金J.X.W.acknowledges financial support from the National Natural Science Foundation of China(No.92064005)Beijing National Laboratory for Molecular Sciences(No.BNLMS201914)+4 种基金thanks S.S.D.in Tianjin Key Laboratory of Molecular Optoelectronic Sciences for her instrumental assistance on PPMS(Dynacool-9T)H.T.Y.acknowledges the support from the National Natural Science Foundation of China(Nos.91750101,21733001,52072168,and 51861145201)the National Key Basic Research Program of China(No.2018YFA0306200)the Fundamental Research Funds for the Central Universities(Nos.021314380078,021314380104,and 021314380147)Jiangsu Key Laboratory of Artificial Functional Materials。
文摘Identifying air-stable two-dimensional(2D)ferromagnetism with high Curie temperature(T_(c))is highly desirable for its potential applications in next-generation spintronics.However,most of the work reported so far mainly focuses on promoting one specific key factor of 2D ferromagnetism(T_(c)or air stability),rather than comprehensive promotion of both of them.Herein,ultrathin Cr_(1-x)Te crystals grown by chemical vapor deposition(CVD)show thickness-dependent T_(c)up to 285 K.The out-of-plane ferromagnetic order is well preserved down to atomically thin limit(2.0 nm),as evidenced by anomalous Hall effect observed in non-encapsulated samples.Besides,the CVD-grown Cr_(1-x)Te nanosheets present excellent ambient stability,with no apparent change in surface roughness or electrical transport properties after exposure to air for months.Our work provides an alternative platform for investigation of intrinsic 2D ferromagnetism and development of innovative spintronic devices.
